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    Vlsi

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    Teegala Kumar Anil
    The document outlines the units of an introduction to IC technology course. Unit I introduces various MOS and CMOS technologies used in integrated circuits like oxidation, lithography, and metallization processes. Unit II covers the basic electrical properties of MOS and CMOS circuits such as threshold voltage and figures of merit. Unit III discusses VLSI design flow, design rules, and layout diagrams. Unit IV describes gate-level design concepts including logic gates, sheet resistance, capacitance calculations, and fan-in and fan-out.

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    Vlsi

    Uploaded by

    Teegala Kumar Anil
    26 views1 page
    The document outlines the units of an introduction to IC technology course. Unit I introduces various MOS and CMOS technologies used in integrated circuits like oxidation, lithography, and metallization processes. Unit II covers the basic electrical properties of MOS and CMOS circuits such as threshold voltage and figures of merit. Unit III discusses VLSI design flow, design rules, and layout diagrams. Unit IV describes gate-level design concepts including logic gates, sheet resistance, capacitance calculations, and fan-in and fan-out.

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    The document outlines the units of an introduction to IC technology course. Unit I introduces various MOS and CMOS technologies used in integrated circuits like oxidation, lithography, and metallization processes. Unit II covers the basic electrical properties of MOS and CMOS circuits such as threshold voltage and figures of merit. Unit III discusses VLSI design flow, design rules, and layout diagrams. Unit IV describes gate-level design concepts including logic gates, sheet resistance, capacitance calculations, and fan-in and fan-out.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    26 views1 page

    Vlsi

    Uploaded by

    Teegala Kumar Anil
    The document outlines the units of an introduction to IC technology course. Unit I introduces various MOS and CMOS technologies used in integrated circuits like oxidation, lithography, and metallization processes. Unit II covers the basic electrical properties of MOS and CMOS circuits such as threshold voltage and figures of merit. Unit III discusses VLSI design flow, design rules, and layout diagrams. Unit IV describes gate-level design concepts including logic gates, sheet resistance, capacitance calculations, and fan-in and fan-out.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
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    UNIT I INTRODUCTION Introduction to IC technology-MOS, PMOS, NMOS, CMOS and BI-CMOS technologies-oxidation, lithiography, diffusion, Ion implantation, metallisation

    , Encapsulation, probe testing, integrated resistors and capacitors. UNIT II BASIC ELECTRICAL PROPERTIES Basic electrical properties of MOS and BI-CMOS circuits: Ids-Vds relationships, MOS transistor threshold voltage, gm, gds, figure of merit; pass transistor, NMOS inverter, various pull-ups, CMOS inverter analysis and design, BI-CMOS inverters. UNIT III VLSI CIRCUIT DESIGN PROCESSES VLSI design flow, MOS layers, stick diagrams, design rules and lay out,2 m CMOS design rules for wires, contacts and transistors layout diagrams for NMOS and CMOS inverters and gates, scaling of MOS circuits, limitations of scaling. UNIT IV GATE LEVEL DESIGN Logic gates and other complex gates, switch logic, alternate gate circuits, basic circuit concepts, sheet resistance RS and its concept to MOS, area capacitance units, calculations-(Micro)-delays, driving large capacitive loads, wiring capacitances, fan-in and fan-out, choice of layers.

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