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Ec3352 Vlsi and Chip Design

This document describes the objectives and units of the course EC3352 VLSI and Chip Design. The objectives are to study CMOS circuits and their characteristics, design combinational and sequential digital circuits, discuss architectural choices and performance tradeoffs in CMOS technology, and learn FPGA architectures and VLSI circuit testability. The five units cover MOS transistor principles, combinational logic circuits, sequential logic circuits and clocking strategies, interconnects, memory architectures and arithmetic circuits, and ASIC design and testing. The outcomes are to realize digital building blocks using MOS transistors, design combinational and sequential circuits, design arithmetic blocks and memory subsystems, and apply FPGA design and testing flows.

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100% found this document useful (2 votes)
976 views15 pages

Ec3352 Vlsi and Chip Design

This document describes the objectives and units of the course EC3352 VLSI and Chip Design. The objectives are to study CMOS circuits and their characteristics, design combinational and sequential digital circuits, discuss architectural choices and performance tradeoffs in CMOS technology, and learn FPGA architectures and VLSI circuit testability. The five units cover MOS transistor principles, combinational logic circuits, sequential logic circuits and clocking strategies, interconnects, memory architectures and arithmetic circuits, and ASIC design and testing. The outcomes are to realize digital building blocks using MOS transistors, design combinational and sequential circuits, design arithmetic blocks and memory subsystems, and apply FPGA design and testing flows.

Uploaded by

Paranthaman G
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EC3352 VLSI AND CHIP DESIGNL T P C 3 0 0 3

OBJECTIVES:
• Study the fundamentals of CMOS circuits and its characteristics
• Learn the design and realization of combinational & sequential digital circuits.
• Architectural choices and performance tradeoffs involved in designing and
realizing the circuits in CMOS technology are discussed
• Learn the different FPGA architectures and testability of VLSI circuits.
NAME:T SELVIN RETNA RAJ/ECE
UNIT I – MOS TRANSISTOR PRINCIPLE
MOS logic families (NMOS and CMOS), Ideal and Non Ideal IV
Characteristics, CMOS devices. MOS(FET) Transistor Characteristic under
Static and Dynamic Conditions, Technology Scaling, power consumption
UNIT II COMBINATIONAL LOGIC CIRCUITS
Propagation Delays, stick diagram, Layout diagrams, Examples of
combinational logic design, Elmore’s constant, Static Logic Gates, Dynamic
Logic Gates, Pass Transistor Logic, Power Dissipation, Low Power Design
principles.
UNIT III SEQUENTIAL LOGIC CIRCUITS AND CLOCKING STRATEGIES
Static Latches and Registers, Dynamic Latches and Registers, Pipelines,
Nonbistable Sequential Circuits. Timing classification of Digital Systems,
Synchronous Design, Self-Timed Circuit Design
UNIT IV INTERCONNECT , MEMORY ARCHITECTURE AND
ARITHMETIC CIRCUITS
Interconnect Parameters – Capacitance, Resistance, and Inductance, Electrical
Wire Models, Sequential digital circuits: adders, multipliers, comparators, shift
registers. Logic Implementation using Programmable Devices (ROM, PLA,
FPGA), Memory Architecture and Building Blocks, Memory Core and Memory
Peripherals Circuitry
UNIT V ASIC DESIGN AND TESTING
Introduction to wafer to chip fabrication process flow. Microchip design process
& issues in test and verification of complex chips, embedded cores and SOCs,
Fault models, Test coding. ASIC Design Flow, Introduction to ASICs,
Introduction to test benches, Writing test benches in Verilog HDL, Automatic
test pattern generation, Design for testability, Scan design: Test interface and
boundary scan.
OUTCOMES:
• Realize the concepts of digital building blocks using MOS transistor.
• Design combinational MOS circuits and power strategies.
• Design and construct Sequential Circuits and Timing systems.
• Design arithmetic building blocks and memory subsystems.
• Apply and implement FPGA design flow and testing.

TEXT BOOKS:
1. Neil H.E. Weste, David Money Harris ―CMOS VLSI Design: A Circuits
and Systems Perspective‖, 4th Edition, Pearson , 2017 (UNIT I,II,V)
2. Jan M. Rabaey ,Anantha Chandrakasan, Borivoje. Nikolic, ‖Digital
Integrated Circuits:A Design perspective‖, Second Edition , Pearson ,
2016.(UNIT III,IV)
REFERENCES:
1. M.J. Smith, ―Application Specific Integrated Circuits‖, Addisson Wesley, 1997
2. Sung-Mo kang, Yusuf leblebici, Chulwoo Kim ―CMOS Digital Integrated
Circuits:Analysis & Design‖,4th edition McGraw Hill Education,2013
3. Wayne Wolf, ―Modern VLSI Design: System On Chip‖,
Pearson Education, 2007 R.Jacob Baker, Harry W.LI., David
E.Boyee, ―CMOS Circuit Design, Layout and Simulation‖,
Prentice Hall of India 2005.

UNIT I PART A(2 marks)


What are the advantages CMOS technology?
• Low power consumption
• High performance
1 • Scalable threshold voltage
• High noise margin
• Low output drive current
2 Distinguish between nMOS and pMOS devices.
nMOS pMOS

In nMOS, electrons are the majority In pMOS, majority carriers are


carriers. When positive voltage is holes.
applied on gate, no. of electrons will
increase. So conductivity of channel is
increased
Switching speed is high, since the Switching speed is low, since the
mobility of electron is high. mobility of hole is low.
nMOS conducts at logic 1. pMOS conducts at logic 0.
3 What is meant by body effect?
Vt is not constant with respect to voltage difference between substrate and
source of transistor. This is known as body effect. It is otherwise known as
substrate-bias effect.
4 What is velocity saturation?
The saturation current increases less than quadratically with increasing Vgs .Tis is
caused by two effects velocity saturation and mobility degradation. At high electric
fields strengths Vds/L carrier velocity ceases to increase linearly with field strength.
This is called velocity saturation and results in lower Ids ,than expected at high Vds.
5 Define inversion layer.
When a higher positive potential greater than critical threshold is applied, it
attracts more positive charge to the gate. These holes are repelled further and
a small number of free electrons in the body are attracted to the region beneath
the gate. This
conductive layer of electrons in the p-type body is called inversion layer.
6 Define Noise Margin.
Noise margin represents the amount of noise voltage on the input of a gate so that
the output. will not be corrupted. It is closely relating to the dc characteristics and it
is also known as noise immunity.
There are two parameters
▪ Low noise margin-NML
High noise margin-NMH
7 What is CMOS technology?
Complementary Metal Oxide Semiconductor (CMOS) in which both n-channel MOS
and p- channel MOS are fabricated in the same IC.
8 What are the advantages of CMOS over NMOS technology?
• In CMOS technology the aluminum gates of the transistors are replaced by
poly silicon gate.
• The main advantage of CMOS over NMOS is low power consumption.
In CMOS technology the device sizes can be easily scalable than NMOS.
9 What are the advantages of CMOS technology?
• Low power consumption
• High performance
• Scalable threshold voltage
• High noise margin
• Low output drive current
10 What are the disadvantages of CMOS technology?
• Low resistance to process deviations and temperature changes
• Low switching speed at large values of capacitive loads
11 What are the system approaches to prevent latch-up?
By using proper grounding technique
By using decoupling capacitors at the supply pins of the IC
By placing a reversed-biased diode between each supply rail and the I/O pins By
placing series resistance to limit the fault current to a safe value
Carefully protect electrostatic protection devices associated with I/O pads with guard
rings
12 Mention MOS transistor characteristics.
Metal Oxide Semiconductor is a three terminal device having source, drain and gate.
The resistance path between the drain and source is controlled by applying a voltage
to the gate. The normal conduction characteristics of an MOS transistor can be
categorized as Cut off region, Non-saturated region and saturated region.
13 What is threshold voltage?
It is defined as the minimum voltage at which the device starts conduction (ie.,) turns
on.
14 What are the different operating modes of MOS transistor?
• Accumulation mode
• Depletion mode
• Inversion mode
15 What is saturated region?
Channel is strongly inverted and the drain current flow is ideally independent of
drain-source voltage is called saturated region.
0<Vgs-Vt<Vds
16 What are the functional parameters of threshold equation?
• Gate conductor material
• Gate insulator material
• Gate insulator thickness- channel doping
• Impurities at the silicon- insulator interface
• Voltage between the source and the substrate, Vsb
17 What is body effect?
The threshold voltage Vt is not constant with respect to voltage difference between
source and substrate is called body effect.
18 What is channel length modulation?
The increase of the depletion layer width at the drain as the drain voltage is increased.
This leads to a shorter channel length and an increased current is called Channel
length modulation in a MOS.
19 What is mobility variation?
The mobility is defined as the ratio of average carrier drift velocity to the electric
field intensity.
20 Define scaling?
Scaling of MOS transistor is concerned with systematic reduction of overall
dimensions of the devices as allowed by the available technology, while preserving
the geometric ratios found in the larger devices.
PART B(13 marks)
1 Explain the operation of a CMOS inverter clearly indicating the various regions
of operation. (13M)
CMOS Inverter- Diagram-Circuit-Operation- input -0‖- Output -01 (2M)
CMOS Inverter DC Characteristics- Cut off- Ids=0, Vgs≤ Vt –Saturated-0<Vgs-
Vt<Vds - Non-Saturated-0<Vds<Vgs-Vt (3M)
CMOS Inverter DC transfer and operating regions- Diagram-Region A-Region B-
Region C-Region D-Region E (8M)
2 Explain in detail about the ideal I-V characteristics and non-ideal I-V
characteristics of NMOS and PMOS devices and derive its equation.(13M)
MOS DC Equations- Cut-off mode- Non-saturated or Linear mode- Saturated mode
(4M)
Non ideal IV characteristics (9M)

3 Explain the electrical properties of MOS transistor in detail (13M)


Electrical Properties- Threshold Voltage- Threshold voltage equations-Body effect
(2M)
MOS DC Equations- Cut off- Ids=0, Vgs≤ Vt –Saturated-0<Vgs-Vt<Vds -Non-
Saturated- 0<Vds<Vgs-Vt (2M)
Small Signal AC Characteristics-Voltage gain-Figure of merit (2M)
MOS Capacitances-Simple MOS capacitance model-Detailed MOS Capacitance
model- MOS Device Capacitance (2M)
MOS Resistance-Resistance of Non-rectangular Regions-Contact and via Resistance-
Distributed RC effect-Wire length Design Guide- (1M) Inductance-
Non-Ideal I-V Characteristics of MOS-Threshold voltage- Body effect- Sub
threshold conduction- Channel length modulation- Mobility variation- Drain punch
through- Impact ionization- Drain induced barrier lowering- Tunneling-Velocity
saturation and mobilitydegradation- Junction leakage- Temperature dependence-
Geometry Dependence (4M)
4 Explain in detail about the scaling concept of CMOS chips.(13M) (May/June2013)
Constant field Scaling-Largest reduction in power delay product of single transistor
(3M)
Constant voltage scaling-Voltage compatibility with older circuits
(3M)
Comparison of the effect of scaling on MOSFET devices- Gate length- Gate
width- Field- Oxide Thickness- Substrate doping- Gate capacitance-Oxide
capacitance- Transit time- Transit frequency- Voltage- Current- Power- Power-
delay (7M)
5 Explain the operation of a CMOS inverter clearly indicating the various regions
of operation. (13M)
CMOS Inverter- Diagram-Circuit-Operation- input ―0‖- Output ―1 (2M)
CMOS Inverter DC Characteristics- Cut off- Ids=0, Vgs≤ Vt –Saturated-0<Vgs-
Vt<Vds - Non-Saturated-0<Vds<Vgs-Vt (3M)
CMOS Inverter DC transfer and operating regions- Diagram-Region A-Region B-
Region C-Region D-Region E (8M)
UNIT II( 2 marks)
1 What are the short falls of pass transistor logic?
The short fall associated with PTL is threshold variation (or) threshold drop. An
NMOS device is effective at passing a 0, but it is poor at pulling a node to VDD.
When the pass-transistor pulls a node
high, the output only charges to VDD − Vtn. The output voltage will also gets affected
when the source-to-body voltage is present (body effect).
2 What is complementary pass transistor logic?
CPL is an alternative structure to eliminate threshold variation. The main concept
behind CPL is the use of only an nMOS network for the implementation of logic
functions. This results in low input capacitance and high speed operation. It consists of
nMOS pass transistor logic network driven by two sets of complementary inputs and
CMOS inverter used as buffers.
3 What is swing-restored pass transistor logic?
It is an alternate configuration for PTL to eliminate threshold drop. In SRPL the output
inverters are cross- coupled like a latch structure, which performs both swing restoration and
output buffering.
4 What is pass transistor logic?
It is a MOS transistor, in which gate is driven by a control signal, the source (out),
the drain of the transistor is called constant or variable voltage potential (in). When
the control signal is high, input is passed to the output and when the control signal is
low, the output is in high impedance (floating).
5 Write the application of TG.
• Multiplexing element or path selector
• A latch element
• An Analog switch
• Act as a voltage controlled resistor connecting the input and output.
6 List the Important properties of static CMOS design.
• At any instant of time, the output of the gate is directly connected to VSS or
VDD.
• All functions are composed of either AND‘ed or OR‘ed sub functions. The
AND function is composed of NMOS transistors in series. The OR function
is composed of NMOS transistors in parallel.
• Contains a pull-up network (PUP) and pull down network (PDN).
• PUP networks consist of PMOS transistors.
• PDN networks consist of NMOS transistors.
• Each network is the dual of the other network.
The output of the complementary gate is inverted
7 What are the advantages of multiple threshold transistors?
The threshold problem in pass transistors can be reduced using multiple threshold
transistors. The primary goal of multiple threshold voltage circuits is to selectively
scale the threshold voltages
together with the supply voltage in order to enhance speed without increasing the
subthreshold leakage current.
8 List the limitations of static CMOS design.
The main limitation of static circuits is slower speed as compared to
dynamic circuits. The reasons are
• Increased gate capacitance due to the presence of both PMOS and NMOS
transistors
• Output depends on the previous cycle inputs due to charges that may be
present at internal inputs.
Multiple switching of the output within a cycle depending on the input switching
pattern.
9 Define logical effort.
Logical effort of a gate is defined as the ratio of the input capacitance of the gate to
the input capacitance of an inverter that can deliver the same output current.
10 Define path logical effort.
The logical effort along a path compounds by multiplying the logical efforts of all the
logic gates along the path.
11 What are the sources of power dissipation?
• Static power dissipation (due to leakage current when the circuit is idle)
• Dynamic power dissipation (when the circuit is switching) and
Short-circuit power dissipation during switching of transistors.
12 What is static power dissipation?
Power dissipation due to leakage current when the circuit is idle is called the static
power dissipation. Static power due to
• Sub-threshold conduction through OFF transistors.
• Tunneling current through gate oxide.
• Leakage through reverse biased diodes.
Contention current in ratioed circuits.
13 What are the methods to reduce dynamic power dissipation?
• Reducing the product of capacitance and its switching frequency.
• Eliminate logic switching that is not necessary for computation.
• Reduce activity factor.
Reduce supply voltage.
14 What are the characteristics of CVSL?
• CVSL is a differential type of logic circuit whereby both true and
complement inputs are required.
• N pull down trees are the dual of each other.
• P pull up devices are cross coupled to latch output.
Both true and complement outputs are obtained.
15 What is dynamic CMOS logic?
• Dynamic circuits rely on the temporary storage of signal values on the
capacitance of high impedance nodes.
Requires only N+2 transistors.
16 What is dynamic CMOS logic?
• Dynamic circuits rely on the temporary storage of signal values on the
capacitance of high impedance nodes.
Requires only N+2 transistors.
17 What are glitches?
A node exhibiting multiple transitions in a single clock cycle before settling to the
correct logic level is called glitches or dynamic hazards. The occurrence of glitching
in a circuit is mainly due to mismatch in the path lengths in the network.
18 What are glitches?
A node exhibiting multiple transitions in a single clock cycle before settling to the
correct logic level is called glitches or dynamic hazards. The occurrence of glitching
in a circuit is mainly due to mismatch in the path lengths in the network.
19 Sketch the layout of a 2-input NAND gate.

20 List out the sources of static and dynamic power consumption.


CMOS devices have very low static power consumption, which is the result of
leakage current. But, when switching at a high frequency, dynamic power
consumption can contribute significantly to overall power consumption.
Charging and discharging a capacitive output load further increases this
dynamic power consumption.
UNIT III(2 marks)
1 Define combinational and sequential circuit.
A combinational circuit consists of logic gates whose outputs at any time are
determined from the present combination of inputs. On the other hand a sequential
circuit in which the output depends on previous as well as current inputs. They can be
used to keep a record of what value a variable (input,
output or intermediate) had in the past as well as store the current value of a
variable for later use.
2 What is sequencing element?
Sequential circuits are designed with flip flops or latches, which are sometimes called
memory elements that hold data called tokens. They can be used to keep record of what
value (previous token) a variable had in the past as well as store the current (current
token) value of a variable. They are used to ‗sequence‘ data, i.e. make a large amount
of data appear in a pre-determined bit by bit sequence, they are called as sequencing
elements.
3 What is sequencing overload?
Sequencing elements delay tokens that arrive too early, preventing them from
catching up with the previous tokens. Unfortunately, they inevitably add some delay
to tokens that are already critical, decreasing the performance of the system. This extra
delay is called sequencing overload.
4 Define metastability.
Flip flop is a device that is susceptible to metastability. It has two well defined stable
states, traditionally designated 0 and 1, but under certain conditions it can hover
between them for longer than a clock cycle. This condition is known as metastability.
Such a metastable ―state‖ is considered a failure mode of the logic design and timing
constraints. The most common cause of metastability is violating the flip-flop‘s setup
and hold times. During the time from the setup to the hold time, the input of the flip-
flop should remain in a stable logic state; a change in the input in that time will have
a probability of setting the flip-flop to a metastable state.
5 Define metastable condition.
In reality, when a flip flop samples as input that is changing during its aperture, the
output Q may momentarily take on a voltage between 0 and VDD that is in the
forbidden zone. This is called a metastable state. Eventually, the flip flop will resolve
the output to a stable state of either 0 or 1.
6 Define logic propagation delay (tpd).
Upper bound on interval between valid inputs and valid outputs.
7 Define logic contamination delay (tcd).
Lower bound on interval between invalid inputs and invalid outputs.
8 List the methods of sequencing static circuits.
The three most widely used methods of sequencing static circuits
• Flip flops
• 2-Phase transparent latches
• Pulsed latches
9 Define min-delay failure.
In a sequential circuit if the hold time is large and the contamination delay is small,
data can incorrectly propagate through two successive elements on one clock edge,
corrupting the state of the
system. This is called a race condition, hold time failure or min-delay failure.
10 Define time borrowing.
The principle advantage of transparent latches over flip flops is the softer edges that
allow data to propagate through the latch as soon as it arrives instead of waiting for a
clock edge. Therefore, logic does not have to be divided exactly into half cycles. Some
logic blocks can be longer while others are shorter, and the latch based system will
tend to operate the average of the delays; a flip flop based system would operate at
the longest delay. This ability of slow logic in one half-cycle to use timenormally
allocated to faster logic in another half-cycle is called time borrowing or cycle
stealing.
11 What is clock skew?
In reality clocks have some uncertainty in their arrival times that can cut into the time
available for useful computation is called clock skew.
12 What are the different types of pipelines?
Depending on the data forwarded fashion namely, when applied to new data,
pipelining techniques can be classified into synchronous pipelining, asynchronous
pipelining and wave pipelining. In the synchronous pipelining, new data are applied
to a computational circuit in intervals determined by the maximum propagation delay
of the computational circuit. In the asynchronous pipelining, new data are applied to
a computational circuit in intervals determined by the average propagation delay of
the computational circuit. In the wave pipelining, new data can be applied to a
computational
circuit in intervals determined by the difference between maximum and minimum
propagation delays of the computational circuit.
13 What are the approaches used in the design of asynchronous pipeline systems?
An asynchronous design is based on the concept of modular functional blocks
intercommunicating using some communication protocols. The general approaches of
asynchronous pipeline systems are one way control and two way control. The one
way control is also called a strobe control and the two
way control scheme is generally referred to as a handshaking control.
14 What is resettable latch?
Resettable latches and flip-flops employs a control input called reset signal to enter a
known initial state on startup.
15 What are the two types of reset?
The two types of reset are (i) Synchronous (ii) Asynchronous
In synchronous reset, the flip-flop changes with synchronous control inputs
and clock signal. In asynchronous reset, the output is independent of the
synchronous input and the clock input.
16 What is differential flip-flop?
Differential flip-flops accept true and complementary inputs and produce true and
complementary outputs. This can be built from a clocked sense amplifier so they can
rapidly respond to small differential input voltages.
17 What is synchronizers?
A synchronizer is a circuit that accepts an input that can change at arbitrary times and
produces an output aligned to the synchronizer‘s clock. Because the input can change
during the synchronizer‘s aperture, the synchronizer has a non zero probability of
producing a metastable output.
18 What is arbiter?
An arbiter is a circuit designed to determine which of several signals arrive first.
Arbiters are used in asynchronous circuits to order computational activities for shared
resources to prevent concurrent incorrect operations.
19 What is mesochronous interconnect?
A mesochronous signal is one that has the exactly same frequency as a local clock, and
maintains unknown phase offset to that clock.
20 What is plesiochronous interconnect?
A plesiochronous signal is one that has almost the same frequency as a local clock,
resulting in slowly drifting phase offset to that clock.
UNIT IV(2 marks)
1 What is datapath?
A datapath is the data processing section of a processor. It consists of several
multiple-bit data path elements or operators such as arithmetic units (adder,
multiplier, shifter, comparator) or logical
operators (AND, OR, NAND) arranged horizontally and connected with buses.
Control signals connect to the datapath at the top and bottom.
2 What is bit slice operation?
Bit slicing is a technique for constructing a particular word length of block from
modules of smaller bit width. Each of these components processes one bit field or
―slice‖ of an operand. The grouped
processing components would then have the capability to process the chosen full
word-length.
3 What are the disadvantages of full adder design using static CMOS?
The major shortfalls associated with the static CMOS full adder are:
• Large PMOS transistor in pull up network result in high input capacitances,
which cause high delay and dynamic power.
• The critical path delay of SUM sub-circuit depends on the signal statistics of
CARRY sub- block and inverter delay. Therefore the propagation delay is high
in the static CMOS full adder realization.
• The intrinsic load capacitance of the CARRY signal is high which is
contributed by the gates capacitances C1, C2, C3, C4, C5 and C6, diffusion
capacitances in stage 1 and stage 2 and wiring capacitance.
• This adder realization consumes a large area and it could possible to fabricate
in twin-tub CMOS process to avoid mobility degradation and latch up
condition.
4 Draw the truth table of a binary full adder and write the expressions for sum
and carry output.

5 Draw the topology of a four bit ripple carry adder.

6 What are the main stages of an array multiplier?


The main stages of an array multiplier are: partial product generation, partial product
accumulation and final addition.
7 What are the main stages of an array multiplier?
The main stages of an array multiplier are: partial product generation, partial product
accumulation and final addition.
8 Illustrate binary multiplication using a simple example. Specify the bit size of
the inputs and the partial products.
9 What is the necessity of a level converter? Draw a simple circuit of the same.
When combining multiple supply voltages on a die, level converters are required
whenever module at the lower power supply has to drive a gate at the higher
voltage. If a gate supplied by VDDL drives agate at VDDH, the PMOS transistor
never turns off, resulting in static current and reduced output swing. A level
conversion performed at the boundaries of supply voltage domains prevents these
problems.
10 What method is adopted to reduce power in idle mode?
A common method to reduce power in idle mode is clock gating. In this method, the
main clock connection to a module is turned off (or gated) whenever the block is idle.
However clock gating
11 List the different considerations for designing a Ripple carry adder.
• Propogation delay of ripple carry adder is linearly proportional to N.
• It is important to optimize tcarry than tsum.
Inverting all i/ps to a full adder results in inverted values for all o/ps.
12 What are the draw backs of a static adder circuit?
• Consumes large area.
Circuit is slow.
13 What is the advantage of Dynamic Supply Voltage Scaling (DVS)?
Lowering the clock frequency when executing the reduced workloads reduces the
power but does not save energy- every operation is still executed at the high voltage
level. However if both supply voltage and frequency are reduced simultaneously, the
energy is reduced. In order to maintain the required throughput for high workloads
and minimize energy for low workloads, both supply and
frequency must be dynamically varied according to the requirements application that
is currently being executed. This technique is called Dynamic Supply Voltage
Scaling (DVS).
14 What are the parts of a DVS system?
A practical implementation of the DVS system consists of the following:
• A processor that operate at a wide variety of supply voltages.
• A power regulation loop that sets the minimum voltage necessary for
operation at a desired
• frequency
An operating system that calculates the desired frequencies to meet required
throughputs and task completion deadlines.
15 Illustrate threshold voltage control in an inverter.
Substrate bias is the control knob that allows us to vary the threshold voltages
dynamically. In order to do so, we have to operate the transistors as four- terminal
devices. Variable threshold voltage scheme can accomplish a variety of goals:
• It can lower the leakage in standby mode
• It can compensate for threshold voltage variations across the chip during
normal operation of the circuit
• It can throttle the throughput of the circuit to lower both the active and leakage
power based on performance requirements
16 Why is static adder
circuit slow? static
adder ckt is slow as,
• Long chains of series PMOS transistors are present in both carry & Sum
generation circuit.
• Intrinsic load capacitance of the Co signal is large & consists of 2 diffusion
& 6 gate capacitances plus the wiring g capacitances.
• Carry generation ckt requires 2 inverting stages per bit.
Sum generation ckt requires an extra logic stage
17 What is the advantage of Dynamic adder design?
Reduced capacitance of
dynamic circuitry
results in substantial
speed up over static
implementation.
18 Write the principle of any one fast multiplier?
Booth multiplier is a radix -4 multiplication scheme , which examines 3 bits of the
multiplicand at a time to determine whether to add 0,1,-1,2,-2 of that rank of the
multiplicand.
19 Define throughput.
A metric called throughput is often used as a measure of the utilization of a
microprocessor system. The throughput is the number of operations for the number of
instructions performed over a unit period of time. The throughput is typically
described in terms of either millions of operations per second or million of
instructions per second.
20 Give the application of high speed adder.
High speed Adders will reduce the hardware complexity and make justice with Speed
Power,Area and Accuracy metrics. Adders are one of the key components in
arithmetic circuits. Approximation can increase performance or reduce power
consumption with a simplified or inaccurate circuit in
application contexts where strict requirements are relaxed. The potential application is
in the DSP application for portable devices such as cell phones and laptops.
UNIT V(2 marks)
1 What is an FPGA?
FPGA is Field Programmable Gate Array that consists of an array of anywhere from
64 to 1000s of logic gate groups that are sometimes called configurable logic blocks.
2 What is SOG?
A channelless gate-array is called sea-of-gates (SOG) array. The core area of the die
is completely filled with an array of base cells (the base array).
3 Compare FPGA and CPLD?
CPLD's have a much higher capacity than simple PLDs, permitting more complex
logic circuits to be programmed into them. A typical CPLD is equivalent of from 2 to
64 simple PLDs. The development of these devices followed simple PLD as advances
in technology permitted higher density chips to be implemented. There are several
forms of CPLD, which vary in complexity and programming capability. CPLDs
typically come in 44 to 160 pin packages depending on the complexity.
FPGA are different from simple PLDs and CPLDs in their internal organization and
have the greatest logic capacity. FPGAs are consists of an array of anywhere from 64
to 1000s of logic gate groups that are sometimes called logic blocks. Two basic classes
of FPGAs are fine grained and course grained .The course grained FPGA has large
logic blocks and fine grained FPGAs has much
smaller logic blocks. FPGAs are come in packages up to 1000 pins or more.
4 Differentiate CBIC & Gate array logic?

5 List out three main parts of FPGA & what is PMS?


• CLB-Configurable Logic Block
• IOB-Input Output Block
PMS-Programmable Switch Matrix
6 List the types of ASIC?/ State the different types of ASICs.
• Full-Custom ASICs
• Semicustom ASICs :
– Standard-Cell–Based ASICs
7 What is Full custom ASIC?/What are the features of full custom ASIC?
To modify according to a customer's individual requirements, All mask layers are
customized in a full custom ASIC
• Generally, the designer lays out all cells by hand
• Some automatic placement and routing may be done
• Critical (timing) paths are usually laid out completely by hand
Full-custom design offers the highest performance and lowest part cost (smallest die
size) for a given design. The manufacturing lead time (the time it takes just to make
an IC—not including design time) is typically eight weeks for a full-custom IC.
8 Write the objectives and Goals of System Partitioning.
The goal of partitioning is to divide this part of the system so that each partition is a
single ASIC. To do this we may need to take into account any or all of the following
objectives:
• A maximum size for each ASIC
• A maximum number of ASICs
• A maximum number of connections for each ASIC
A maximum number of total connections between all ASICs
9 What is fully PCI in Spartan-II FPGA?
Fully Peripheral Component Interface (PCI) used to interface components.
10 Differentiate fine-grain and coarse-grain architecture of FPGA BTL4
11 State the Xilinx FPGA design flow.
• Specification
• VHDL description - Functional simulation
• Synthesis - Post-synthesis simulation
• Implementation - Timing simulation
Configuration - On chip testing
12 What are the different types of interconnections present in Xilinx FPGA?
Direct interconnect: Adjacent CLBs are wired together in the horizontal or vertical
direction. The most efficient interconnect.
General-purpose interconnect: used mainly for longer connections or for signals
with a moderate fanout.
Long line interconnect: for time critical signals (e.g. clock signal need be
distributed to many CLBs)
13 What is meant by speed grading?
Most of the FPGA header short chip according to speed is called speed binning or
speed grading. According to Xilinx FPGA product, The speed grade specify the
transistor switching speed that determines how quickly internal clocked circuits can
be activated.

14 What is meant by BIDA?


The Bidirectional Interconnect Buffers (BIDA) restore the logic level and logic
strength on long interconnect paths.
15 List the advantages of Global routing.
We typically global route the whole chip (or large pieces if it is a large chip) before
detail routing the whole chip (or the pieces). There are two types of areas to global
route: inside the flexible blocks and between blocks.
The goal of global routing is to provide complete instructions to the detailed router on
where to route every net. The objectives of global routing are one or more of the
following:
• Minimize the total interconnect length.
• Maximize the probability that the detailed router can complete the routing.
Minimize the critical path delay.
16 What are feedthrough cells? State their uses.
The term feedthrough cells can refer either to a piece of metal that is used to pass a
signal through a cell or to a space in a cell, waiting to be used as a feed through.
17 What is the standard cell-based ASIC design?
In cell based design, the designer reuses the cells that have already been designed and
stored in the library as a part of the current design. Cell – based IC used predesigned
logic cells(AND gates, OR gates, multiplexers and flip flop). CBIC means standard
cell based ASIC. The standard-cell areas in a CBIC are built of rows of standard
cells. The standard-cell areas may be used in combination with
larger predesigned cells known as mega cells.
18 Name the elements in a Configurable Logic Block
Flip flops to store data and Look up tables and Multiplexers to implement logic.
19 What is meant by CBIC?
Cell – based IC used predesigned logic cells (AND gates, OR gates, multiplexers
and flipflop). CBIC means standard cell based ASIC. The standard-cell areas in a
CBIC are built of rows of standard cells. The standard-cell areas may be used in
combination with larger predesigned cells known as
megacells.
20 What is an antifuse? State its merits and demerits.
An antifuse is an electrical device that performs the opposite function to a fuse.
Whereas a fuse starts with a low resistance and is designed to permanently break an
electrically conductive path (typically when the current through the path exceeds a
specified limit), an antifuse starts with a high resistance and is designed to
permanently create an electrically conductive path (typically when the voltage across
the antifuse exceeds a certain level).
Demerits: The size of an antifuse is limited by the resolution of the lithography
equipment used to makes ICs. The Actel antifuse connects diffusion and polysilicon,
and both these materials are too resistive for use as signal interconnects. To connect
the antifuse to the metal layers requires contacts that take up more space than the
antifuse itself, reducing the advantage of the small antifuse size. However, the antifuse
is so small that it is normally the contact and metal spacing design rules that limit how
closely the antifuses may be packed rather than the size of the antifuse itself.
Merits: There are two advantages of a metal–metal antifuse over a poly–diffusion
antifuse.
The first is that connections to a metal–metal antifuse are direct to metal—the wiring
layers. Connections from a poly–diffusion antifuse to the wiring layers require extra
space and create additional parasitic capacitance. The second advantage is that the
direct connection to the low- resistance metal layers makes it easier to use larger
programming currents to reduce the antifuse resistance. Average QuickLogic metal–
metal antifuse resistance is approximately 80 W (with a standard deviation of about
10 W ) using a programming current of 15 mA as opposed to an average antifuse
resistance of 500 W (with a programming current of 5 mA) for a poly–diffusion
antifuse.

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