Vlsi Syllabus
Vlsi Syllabus
CO2 :: Apply static CMOS combinational and sequential logic at the transistor level, including
mask layout.
CO3 :: Focus on the greater depth with the operation of MOS and its structure.
CO5 :: Compose new designs for different logical circuits with MOSFET
CO6 :: Develop in-depth analytical and design capabilities in digital CMOS circuits and chips
Unit I
MOS Transistor : Basic Principle of MOS transistor, The Metal Oxide Semiconductor (MOS) Structure,
The MOS system under External Bias, Structure and Operation of MOS Transistor (MOSFET), The
Threshold Voltage, MOSFET current-voltage characteristics, Substrate Bias Effect (Body Effect)
Unit II
Fabrication of MOSFET and Scaling : Fabrication process flow, The CMOS n-Well process, Layout
design rules, Full-Custom Masks Layout Design, MOSFET scaling & small -geometry effects, MOSFET
Capacitances
Unit III
MOS Inverters (Static and Switching Characteristics) : Introduction to static characteristics,
Voltage Transfer Characteristics, Noise Immunity & Noise Margin, Power & Area Consideration,
Resistive-Load Inverter, Enhancement-Load Inverter, Depletion-Load Inverter, CMOS Inverter, Delay-
Time Definitions, Propagation Delay Time, Calculation of Delay Times, Inverter Design with Delay
Constraints
Unit IV
Combinational MOS Logic Circuits : CMOS Logic Circuits, Complex Logic Circuits, Pass Transistor
Circuits, CMOS Transmission gates
Unit V
Sequential MOS Logic Circuits : Behavior of Bi-stable elements, SR Latch Circuit, Clocked Latch
and Flip-Flop Circuits, Schmitt Trigger Circuit
Unit VI
Dynamic and BiCMOS Logic Circuits : Basic Principles of Pass Transistor Circuits, Dynamic CMOS
Circuit Techniques, High-Performance Dynamic CMOS, BJT Structure & Operation, Basic BiCMOS
Circuit Behavior, Switching Delay
Text Books:
1. CMOS DIGITAL INTEGRATED CIRCUITS by SUNG-MO-KANG & YUSUF LEBLEBICI, MC
GRAW HILL
References:
1. CMOS VLSI DESIGN by NEIL H.E.WESTE ,DAVID HARRIS & AYAN BANERJEE,, PEARSON