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Vlsi Syllabus

This document outlines the course objectives and units for ECE318: CMOS VLSI Design, a 3-credit course. The course aims to teach students how to draw CMOS logic circuits and transmission gates, apply static and sequential CMOS logic at the transistor level, analyze amplifier frequency response, and design new logical circuits. The 6 units cover MOS transistor principles, fabrication processes, MOS inverter characteristics, combinational and sequential logic circuits, dynamic CMOS techniques, and BiCMOS circuits. The primary textbook is CMOS Digital Integrated Circuits by Sung-Mo Kang and Yusuf Leblebici.
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
11 views

Vlsi Syllabus

This document outlines the course objectives and units for ECE318: CMOS VLSI Design, a 3-credit course. The course aims to teach students how to draw CMOS logic circuits and transmission gates, apply static and sequential CMOS logic at the transistor level, analyze amplifier frequency response, and design new logical circuits. The 6 units cover MOS transistor principles, fabrication processes, MOS inverter characteristics, combinational and sequential logic circuits, dynamic CMOS techniques, and BiCMOS circuits. The primary textbook is CMOS Digital Integrated Circuits by Sung-Mo Kang and Yusuf Leblebici.
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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ECE318:CMOS VLSI DESIGN

L:3 T:0 P:0 Credits:3

Course Outcomes: Through this course students should be able to

CO1 :: Draw CMOS Logic Circuits and CMOS Transmission gates

CO2 :: Apply static CMOS combinational and sequential logic at the transistor level, including
mask layout.

CO3 :: Focus on the greater depth with the operation of MOS and its structure.

CO4 :: Analyze the frequency response of amplifier.

CO5 :: Compose new designs for different logical circuits with MOSFET

CO6 :: Develop in-depth analytical and design capabilities in digital CMOS circuits and chips

Unit I
MOS Transistor : Basic Principle of MOS transistor, The Metal Oxide Semiconductor (MOS) Structure,
The MOS system under External Bias, Structure and Operation of MOS Transistor (MOSFET), The
Threshold Voltage, MOSFET current-voltage characteristics, Substrate Bias Effect (Body Effect)
Unit II
Fabrication of MOSFET and Scaling : Fabrication process flow, The CMOS n-Well process, Layout
design rules, Full-Custom Masks Layout Design, MOSFET scaling & small -geometry effects, MOSFET
Capacitances
Unit III
MOS Inverters (Static and Switching Characteristics) : Introduction to static characteristics,
Voltage Transfer Characteristics, Noise Immunity & Noise Margin, Power & Area Consideration,
Resistive-Load Inverter, Enhancement-Load Inverter, Depletion-Load Inverter, CMOS Inverter, Delay-
Time Definitions, Propagation Delay Time, Calculation of Delay Times, Inverter Design with Delay
Constraints
Unit IV
Combinational MOS Logic Circuits : CMOS Logic Circuits, Complex Logic Circuits, Pass Transistor
Circuits, CMOS Transmission gates
Unit V
Sequential MOS Logic Circuits : Behavior of Bi-stable elements, SR Latch Circuit, Clocked Latch
and Flip-Flop Circuits, Schmitt Trigger Circuit
Unit VI
Dynamic and BiCMOS Logic Circuits : Basic Principles of Pass Transistor Circuits, Dynamic CMOS
Circuit Techniques, High-Performance Dynamic CMOS, BJT Structure & Operation, Basic BiCMOS
Circuit Behavior, Switching Delay

Text Books:
1. CMOS DIGITAL INTEGRATED CIRCUITS by SUNG-MO-KANG & YUSUF LEBLEBICI, MC
GRAW HILL
References:
1. CMOS VLSI DESIGN by NEIL H.E.WESTE ,DAVID HARRIS & AYAN BANERJEE,, PEARSON

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