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1.
High spatial resolution monolithic pixel detector in SOI technology / Bugiel, R (AGH-UST, Cracow) ; Bugiel, S (AGH-UST, Cracow) ; Dannheim, D (CERN) ; Fiergolski, A (CERN) ; Hynds, D (CERN) ; Idzik, M (AGH-UST, Cracow) ; Kapusta, P (Cracow, INP) ; Kucewicz, W (AGH-UST, Cracow) ; Munker, M (CERN) ; Nurnberg, A (CERN) et al.
This paper presents test-beam results of monolithic pixel detector prototypes fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology studied in the context of high spatial resolution performance. The tested detectors were fabricated on a 500 μm thick high-resistivity Floating Zone type n (FZ-n) wafer and on a 300 μm Double SOI Czochralski type p (DSOI Cz-p) wafer. [...]
CLICdp-Pub-2020-004.- Geneva : CERN, 2021 - 14. - Published in : Nucl. Instrum. Methods Phys. Res., A 988 (2021) 164897 Fulltext: PDF; Fulltext from Publisher: PDF;
2.
Test-beam results of a SOI pixel detector prototype / Bugiel, Roma (AGH University of Science and Technology (PL)) ; Bugiel, Szymon (AGH University of Science and Technology (PL)) ; Dannheim, Dominik (CERN) ; Fiergolski, Adrian (CERN) ; Hynds, Daniel (CERN) ; Idzik, Marek (AGH University of Science and Technology (PL)) ; Kapusta, P (IFJ, Poland) ; Kucewicz, Wojciech (AGH University of Science and Technology (PL)) ; Munker, Ruth Magdalena (University of Bonn (DE) ; CERN) ; Nurnberg, Andreas Matthias (CERN) /CLICdp
This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. [...]
CLICdp-Pub-2018-001.- Geneva : CERN, 2018 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 901 (2018) 173-179 Fulltext: PDF; Fulltext from Publisher: PDF;
3.
Beam test studies of monolithic pixel structures for CLIC vertex detector / Bugiel, Roma
The Compact Linear Collider (CLIC) is an international project of e$^{+}$ e$^{−}$ linear accelerator with maximal centre-of-mass energy of 3 TeV [...]
CERN-THESIS-2019-115 - 126 p.

Full text
4.
Test-beam and simulation studies for the CLICTD technology demonstrator - a monolithic CMOS pixel sensor with a small collection diode / Dort, Katharina (CERN ; Giessen U.) /CLICdp Collaboration
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a continuous n-type implant for full lateral depletion, and the second with a segmentation in the n-type implant for accelerated charge collection. [...]
arXiv:2106.12925; CLICdp-Conf-2021-003.- Geneva : CERN, 2022 - 5 p. - Published in : J. Phys. : Conf. Ser. 2374 (2022) 012170 Fulltext: CLICdp-Conf-2021-003 - PDF; document - PDF; 2106.12925 - PDF;
In : International Conference on Technology and Instrumentation in Particle Physics (TIPP 2021), Online, Canada, 24 - 29 May 2021, pp.012170
5.
Silicon vertex and tracking detector R&D for CLIC / Dort, Katharina (Justus-Liebig-Universitaet Giessen (DE)) ; Dort, Katharina (CERN ; Giessen U.) /CLICdp Collaboration
The physics aims at the proposed future high-energy linear e+e- collider CLIC pose challenging demands on the performance of the detector system. In particular, the vertex and tracking detectors have to combine a spatial resolution of a few micrometres and a low material budget with a time-stamping accuracy of a few nanoseconds. [...]
arXiv:2010.10837; CLICdp-Conf-2020-006.- Geneva : SISSA, 2021 - 6 p. - Published in : PoS ICHEP2020 (2021) 836 Fulltext: CLICdp-Conf-2020-006 - PDF; PoS(ICHEP2020)836 - PDF; 2010.10837 - PDF; Fulltext from publisher: PDF;
In : 40th International Conference on High Energy Physics (ICHEP), Prague, Czech Republic, 28 Jul - 6 Aug 2020, pp.836
6.
Beam tests of an integrated prototype of the ATLAS Forward Proton detector / ATLAS Collaboration
The ATLAS Forward Proton (AFP) detector is intended to measure protons scattered at small angles from the ATLAS interaction point. To this end, a combination of 3D Silicon pixel tracking modules and Quartz-Cherenkov time-of-flight (ToF) detectors is installed 210m away from the interaction point at both sides of ATLAS. [...]
arXiv:1608.01485.- 2016-09-19 - 38 p. - Published in : JINST 11 (2016) P09005 Fulltext: arXiv:1608.01485 - PDF; 10.1088_1748-0221_11_09_P09005 - PDF; IOP Open Access article: PDF; External link: Preprint
7.
Radiation hardness of a 180 nm SOI monolithic active pixel sensor / Fernandez-Perez, S (CERN ; Barcelona, IFAE) ; Backhaus, M (CERN) ; Pernegger, H (CERN) ; Hemperek, T (Bonn U.) ; Kishishita, T (Bonn U.) ; Krüger, H (Bonn U.) ; Wermes, N (Bonn U.)
The use of Silicon-on-Insulator (SOI) technology as a particle detector in a high radiation environment is, at present, limited mostly by radiation effects on the transistor characteristics, back gate effect, and mutual coupling between the Buried Oxide (BOX) and the sensor. We have fabricated and tested a new 0.18μm SOI CMOS monolithic pixel sensor using the XFAB process. [...]
2015 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 796 (2015) 13-18 Elsevier Open Access article: PDF;
In : 10th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Florence, Italy, 8 - 10 Oct 2014, pp.13-18
8.
Reduction techniques of the back gate effect in the SOI Pixel Detector / Ichimiya, R (KEK, Tsukuba) ; Arai, Y (KEK, Tsukuba) ; Fukuda, K (Keio U.) ; Kurachi, I (Keio U.) ; Kuriyama, N (Oki Semiconductor Miyagi) ; Ohno, M (AIST, Tsukuba) ; Okihara, M (Oki Semiconductor Miyagi) /SOI Pixel collaboration
We have fabricated monolithic pixel sensors in 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, consisting of a thick sensor layer and a thin circuit layer with an insulating buried-oxide, which has many advantages. However, it has been found that the applied electric field in the sensor layer also affects the transistor operation in the adjacent circuit layer. [...]
CERN, 2009 Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.68-71 (CERN-2009-006)
9.
Pixel detector R&D for the Compact Linear Collider / Benoit, Mathieu (Geneva U.) /CLICdp Collaboration
The physics aims at the proposed future CLIC high-energy linear e+e− collider pose challenging demands on the performance of the detector system. In particular the vertex and tracking detectors have to combine precision measurements with robustness against the expected high rates of beam-induced backgrounds. [...]
arXiv:1902.08752; CLICdp-Conf-2019-003.- Geneva : CERN, 2019-06-04 - 12 p. - Published in : JINST 14 (2019) C06003 Fulltext: CLICdp-Conf-2019-003 - PDF; 1902.08752 - PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018), Taipei, Taiwan, 10 - 14 Dec 2018, pp.C06003
10.
Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement / Ballabriga Sune, Rafael (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, D (CERN) ; Dort, K (CERN) ; Egidos, N (CERN) ; Huth, L (DESY) ; Kremastiotis, I (CERN) ; Kroger, J (CERN) ; Linssen, L (CERN) et al.
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. [...]
CLICdp-Pub-2021-001.- Geneva : CERN, 2021 - 14. Fulltext: PDF;

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