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9 views

assignment questions

Uploaded by

aaronaitest
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© © All Rights Reserved
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Assignment-I

Subject: Electronic Circuits analysis and Design (EC151)


Last Date for submission: 21/03/2024 Before 5.00PM
1. In a CE amplifier circuit RC = 5.6kΩ and RL=56kΩ. The transistor used has hfe=60
hie=1.5kΩ Cbe ==192pF and Cbc= 6pF. The signal source resistance is 1kΩ, and the
voltage divider bias resistors are R1=82kΩ and R2=39kΩ. Determine the upper cut of
frequency of the amplifier.
2. Explore the high-frequency response of the CB amplifier and analyse its bandwidth
limitations.
3. Determine the voltage gain, current gain, input impedance, and output impedance of
the common drain amplifier.
4. Derive the nonlinear transfer function for an amplifier circuit exhibiting distortion.
Discuss how the nonlinearities in the transfer function contribute to distortion and how
they can be modelled and analysed.
5. Given a common emitter BJT amplifier circuit with the following parameters:
Collector resistance (RC):5kΩ, Base resistance (RB): 1MΩ, Emitter resistance (RE):
500Ω, DC bias current (IC): 2mA, DC bias voltage (VCC): 10V, Internal resistance of
the transistor (ro): 50kΩ, Calculate the short circuit current gain (hfe) of the amplifier.
6. Analyse the frequency response of a common drain amplifier. Derive the expression for
the cutoff frequency and discuss the factors affecting the bandwidth of the amplifier.
7. Given an N-channel MOSFET with the following parameters:
Transconductance (gm): 0.1 S, Output conductance (gds): 10 µS
Capacitance (Cgs): 1 pF, Capacitance (Cgd): 0.5 pF
Derive the high-frequency small-signal equivalent circuit for the MOSFET.
Calculate the impedance parameters (rin, rout) of the MOSFET in the high-frequency
model. Determine the cutoff frequency (fH) of the MOSFET CS amplifier.
Discuss how each component of the high-frequency model affects the MOSFET's
performance at high frequencies.
8. Given an NPN bipolar junction transistor (BJT) with the following parameters:
Transconductance (gm): 0.05 S
Output conductance (go): 20 µS
Capacitance (Cπ): 0.8 pF
Capacitance (Cμ): 0.3 pF
Derive the high-frequency small-signal equivalent circuit for the BJT.
Calculate the impedance parameters (rin, rout) of the BJT in the high-frequency model.
Determine the cutoff frequency (fH) of the BJT CE amplifier.
Discuss how each component of the high-frequency model influences the BJT's
behaviour at high frequencies.
9. Given a common emitter BJT amplifier circuit with the following parameters:
Collector resistance (RC): 5kΩ, Base resistance (RB): 1MΩ, Emitter resistance (RE):
500Ω, DC bias current (IC): 2mA, DC bias voltage (VCC): 10V, Internal capacitances
Cπ =Cμ = 1pF, Perform a stability analysis of the amplifier considering the effect of
internal. Discuss the conditions for stability and potential oscillations in the amplifier
circuit.
10. Given a common source MOSFET amplifier circuit with the following parameters:
Drain resistance: RD=10 kΩ, Gate resistance: RG=100 kΩ, Source resistance: RS=500Ω,
Drain current: ID=1 mA, Supply voltage: VDD=20 V, Transconductance (gm): =2 mS
Output conductance (gds): =0.1 mS, Find the small signal parameters using the h-
parameter model.
11. Given the following parameters for an NPN BJT transistor:
Transistor current gain (hfe): 100, Emitter resistance (re): 10 Ω, Collector resistance
(RC): 1 kΩ, Base-emitter junction capacitance (Cπ): 2 pF, Base-collector junction
capacitance (Cμ): 1 pF, Derive the small-signal equivalent circuit of the NPN BJT in
the Common Collector (CC) configuration.
i. Calculate the transconductance (gm) and output conductance (go) of the BJT.
ii. Determine the input impedance (rin) and output impedance (rout) of the CC
amplifier.
iii. Calculate the cutoff frequency (cfc) of the CC amplifier due to the junction
capacitances (Cπ and Cμ).
iv. Discuss the significance of each component in the small-signal model and how
they affect the CC amplifier's performance.

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