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Unit - 2 ACKTS Subjective Questions

This document contains subjective questions related to high frequency response and amplifier configurations. It includes questions about MOSFET and BJT capacitances, derivation of expressions for unity gain frequency and voltage gain of different amplifier configurations. Specific questions calculate unity gain frequency, midband gain and 3dB cutoff frequency for different amplifiers. Other questions relate to Miller's theorem, cascode and Darlington amplifiers, and their frequency responses.

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Ravi
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110 views3 pages

Unit - 2 ACKTS Subjective Questions

This document contains subjective questions related to high frequency response and amplifier configurations. It includes questions about MOSFET and BJT capacitances, derivation of expressions for unity gain frequency and voltage gain of different amplifier configurations. Specific questions calculate unity gain frequency, midband gain and 3dB cutoff frequency for different amplifiers. Other questions relate to Miller's theorem, cascode and Darlington amplifiers, and their frequency responses.

Uploaded by

Ravi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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UNIT-II

Subjective Questions

2.1 HIGH FREQUENCY RESPONSE : GENERAL CONSIDERATION


1. Explain about different MOSFET Capacitances. [BL2]
2. Derive the expression for unity gain frequency of MOSFET. [BL2]
3. Explain and derive the expression voltage gain for CS Amplifier. [BL2]
4. Explain about different BJT Capacitances. [BL2]
5. Explain and derive the expression voltage gain for CE Amplifier. [BL2]
6. Discuss about the General considerations of amplifier parameters.
[BL2]
7. Find fT for a MOSFET operating at ID = 100 µA and VOV = 0.25 V. The
MOSFET has Cgs = 20 fF and Cgd = 5 fF. [BL3]

2.2 MILLERS THEORM:

1. State and prove Millers Theorem. [BL2]


2. Derive the expression for unity gain frequency of BJT. [BL2]
3. Draw the high frequency models of BJT and MOSFET. [BL2]
4. Figure below shows an ideal voltage amplifier having a gain of -100 V/V with
an impedance Z Connected between its output and input terminals. Find the
Miller equivalent circuit when Z is [BL3]

(a) a 1MΩ resistance, and


(b) a 1pF capacitance .In each case use the equivalent circuit to
Determine VO/Vsig.
2.3 HIGH-FREQUENCY RESPONSE OF THE CS AND CE AMPLIFIERS

1. A common-source MOS amplifier is to be evaluated for its high-frequency


response. For this particular design, R sig = 1 MΩ, Rin = 5 MΩ, RL100 = ‫ ׳‬KΩ, Cgs =
0.2 pF, Cgd = 0.1 pF, and gm = 0.3 mA/V. Estimate the midband gain and the 3-
dB frequency. [BL4]

2. Using the method of open-circuit time constants, a set of amplifiers are


found to be characterized by the following time constants and/or frequencies.
For each case, estimate the 3-dB cutoff frequency in rad/s and in Hz.
(a) 20 ns, 5 ns, 1 ns (b) 50 MHz, 200 MHz, 1 GHz (c) 1µs, 0.4 µs
[BL3]
3. An ideal voltage amplifier with a voltage gain of -1000 V/V has a 0.1 pF
capacitance connected between its output and input terminals. What is the
input capacitance of the amplifier? If the amplifier is fed from a voltage source
Vsig having a resistance Rsig = 1 KΩ, find the transfer function Vo/V sig as a
function of the complex-frequency variable s and hence 3-dB frequency f H and
the unity-gain frequency fT. . HINT: fT= Av * fH. [BL4]

4. A discrete MOSFET CS amplifier has R in= 2 MΩ, gm = 4mA/V, ro = 100 KΩ,


Cgs = 2 pF and Cgd = 0.5 pF. The amplifier is fed from a voltage source with an
internal resistance of 500 KΩ and is connected to a 10 KΩ load. Find (a) the
overall midband gain AM and (b) the upper 3-dB frequency f H.
[BL3]
5. A particular BJT operating at IC = 2 mA has Cµ = 1 pF, CΠ = 10 pF and β=
150. What are fT and fβ for this situation? [BL3]

6. For a CE amplifier, Rsig = 5 KΩ, R1 = 33 KΩ, R2 = 22 KΩ, RE = 3.9 KΩ, RC =


4.7 KΩ, RL = 5.6 KΩ, VCC = 5 V. The DC emitter current can be shown to be I E
= 0.3 mA at which βo = 120, ro = 300 KΩ, and rx =50Ω. Find the input
resistance Rin and the midband gain A M. If the transistor specified to have f T =
700 MHz and Cµ = 1 pF, find the upper 3-dB frequency f H.
[BL4]
7. Find the Values of AM and FH of a CS Amplifier for Rsig= 100KΩ, RG=
4.7MΩ, RD=RL= 15KΩ, gm= 1mA/V, ro= 150KΩ, Cgs=1pF, Cgd= 0.4pF.
[BL3]
8. For the same specifications as in Q7 (previous one), what is the maximum
value of Cgd can be in order to obtain an FH of at least 1MHz.
[BL3]
2.4 THE CASCODE AMPLIFIER:

1. Derive the expressions for input, output resistances and voltage gain of BJT
cascade Amplifier. [BL2]

2. Explain the small signal analysis of MOS cascode Amplifier. [BL2]

2. Explain the frequency response of MOS cascode Amplifier. [BL2]

3. Explain the frequency response of BJT cascode Amplifier. [BL2]

2.5 The Darlington Configuration

1. Discuss about Darlington Configuration. [BL2]


2. The amplifier circuit shown, determine the value of R such that Q2 is biased
at VCE2= 7.5 V. Assume Q1 and Q2 to be identical with V BE = 0.7 V. Also
determine the small signal input impedance of Q1 and Q2, if both of them
have β = 200. VT= 26mV. (GATE 2014) [BL3]

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