BULT118: High Voltage Fast-Switching NPN Power Transistors

 BULT118
HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
1
2
APPLICATIONS: 3
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE SOT-32
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability. INTERNAL SCHEMATIC DIAGRAM
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 2 A
I CM Collector Peak Current (tp < 5 ms) 4 A
IB Base Current 1 A
I BM Base Peak Current (t p < 5 ms) 2 A
o
P t ot Total Dissipation at T c = 25 C 45 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 2000 1/7

BULT118
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 2.77 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 80 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 700 V 100 µA
o
Current (V BE = 0) V CE = 700 V Tj = 125 C 500 µA
V EBO Emitter-Base Voltage I E = 10 mA 9 V
V CEO(sus )∗ Collector-Emitter I C = 100 mA L = 25 mH 400 V
Sustaining Voltage
(I B = 0)
I CEO Collector-Emitter V CE = 400 V 250 µA
Leakage Current
V CE(sat )∗ Collector-Emitter I C = 0.5 A IB = 0.1 A 0.5 V
Saturation Voltage IC = 1 A IB = 0.2 A 1 V
IC = 2 A IB = 0.4 A 1.5 V
V BE(s at)∗ Base-Emitter I C = 0.5 A IB = 0.1 A 1.0 V
Saturation Voltage IC = 1 A IB = 0.2 A 1.2 V
IC = 2 A IB = 0.4 A 1.3 V
h FE∗ DC Current G ain I C = 10 mA V CE = 5 V 10
I C = 0.5 A VCE = 5 V 10 50
IC = 2 A VCE = 5 V 8
RESISTIVE LO AD
tr Rise Time V CC = 125 V IC = 1 A 0.4 0.7 µs
ts Storage Time I B1 = 0.2 A IB2 = -0.2 A 3.2 4.5 µs
tf Fall T ime 0.25 0.4 µs
INDUCTIVE LOAD IC = 1 A IB1 = 0.2 A
ts Storage Time V BE = -5 V L = 50 mH 0.8 µs
tf Fall T ime V c la mp = 300 V 0.16 µs
∗ Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2/7
BULT118
Safe Operating Areas Derating Curve
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
3/7
BULT118
Inductive Fall Time Inductive Storage Time
Resistive Fall Time Resistive Load Storage Time
Reverse Biased SOA
4/7
BULT118
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch

2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch

2) Non-inductive Resistor
5/7
BULT118
SOT-32 (TO-126) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2
c1
0016114
6/7
BULT118
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 2000 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES
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 BULT118

HIGH VOLTAGE FAST-SWITCHING

ABSOLUTE MAXIMUM RATINGS

June 2000 1/7

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Safe Operating Areas Derating Curve

DC Current Gain DC Current Gain

Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

Inductive Fall Time Inductive Storage Time

Resistive Fall Time Resistive Load Storage Time

Reverse Biased SOA

Figure 1: Inductive Load Switching Test Circuits.

1) Fast electronic switch

Figure 2: Resistive Load Switching Test Circuits.

1) Fast electronic switch

SOT-32 (TO-126) MECHANICAL DATA

A 7.4 7.8 0.291 0.307

B 10.5 10.8 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.040 0.106

c1 1.0 1.3 0.039 0.050

D 15.4 16.0 0.606 0.629

e3 4.15 4.65 0.163 0.183

G 3 3.2 0.118 0.126

 2000 STMicroelectronics – Printed in Italy – All Rights Reserved

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