Alfa-MOS AFN4134

30V N-Channel
Technology Enhancement Mode MOSFET

General Description Features

AFN4134, N-Channel enhancement mode
30V/12A,RDS(ON)=15mΩ@VGS=10V

MOSFET, uses Advanced Trench Technology
30V/10A,RDS(ON)=20mΩ@VGS=4.5V
to provide excellent RDS(ON), low gate charge.

Super high density cell design for extremely
These devices are particularly suited for low
low RDS (ON)
voltage power management, and low in-line

SOP-8P package design
power loss are needed in commercial industrial
surface mount applications.

Pin Description ( SOP-8P )

Application

DC/DC Converter

Load Switch

Power Management in Notebook Computer

Pin Define
Pin Symbol Description
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain

Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFN4134S8RG 4134 SOP-8P Tape & Reel 3000 EA

 A Lot code

 B Date code

 AFN4134S8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 1
 Alfa-MOS AFN4134
30V N-Channel
Technology Enhancement Mode MOSFET

Absolute Maximum Ratings

(TA=25
Unless otherwise noted)
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 30 V
Gate –Source Voltage VGSS ±20 V
TA =25
12
Continuous Drain Current(TJ=150
) ID A
TA =70
10
Pulsed Drain Current IDM 30 A
Continuous Source Current(Diode Conduction) IS 2.0 A
TA=25
2.8
Power Dissipation PD W
TA=70
1.8
Operating Junction Temperature TJ 150

Storage Temperature Range TSTG -55/150

Thermal Resistance-Junction to Ambient RθJA 62.5
/W

Electrical Characteristics
(TA=25
Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.5 1.8
Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA
VDS=30V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V uA
10
TJ=85

On-State Drain Current ID(on) VDS5V,VGS=10V 15 A
VGS=10V,ID=12A 11 15
Drain-Source On-Resistance RDS(on) mΩ
VGS=4.5V,ID=10A 15 20
Forward Transconductance gFS VDS=15V,ID=10A 24 S
Diode Forward Voltage VSD IS=3.0A,VGS=0V 0.8 1.3 V
Dynamic
Total Gate Charge Qg 8 12
VDS=15V,VGS=4.5V
nC
Gate-Source Charge Qgs ID≡10A 2.0
Gate-Drain Charge Qgd 2.3
Input Capacitance Ciss 800
VDS=15V,VGS=0V
Output Capacitance Coss 180 pF
f=1MHz
Reverse Transfer Capacitance Crss 70
td(on) 8 15
Turn-On Time VDD=15V,RL=1.5Ω
tr 8 15
ID≡10A,VGEN=10V ns
td(off) RG=1Ω 16 28
Turn-Off Time
tf 8 16

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 2
 Alfa-MOS AFN4134
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 3
 Alfa-MOS AFN4134
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 4
 Alfa-MOS AFN4134
30V N-Channel
Technology Enhancement Mode MOSFET

Typical Characteristics

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 5
 Alfa-MOS AFN4134
30V N-Channel
Technology Enhancement Mode MOSFET

Package Information ( SOP-8P )

©2010 Alfa-MOS Technology Corp.

2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.)
Tel : 886 2) 2651 3928
Fax : 886 2) 2786 8483
©http://www.alfa-mos.com

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.A Sep. 2010 Page 6