FDS8690 N-Channel PowerTrench® MOSFET

January 2006

FDS8690
N-Channel PowerTrench® MOSFET
30V, 14A, 7.6mΩ
General Description Features
„ Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
This N-Channel MOSFET has been designed specifically to
„ Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM „ High performance trench technology for extremely low
rDS(on) and fast switching
controllers. It has been optimized for low gate charge, low
„ Very low gate charge
rDS(on) and fast switching speed.
„ High power and current handling capability
Applications
„ Notebook CPU power supply „ 100% RG tested
REE I
„ RoHS Compliant DF
„ Synchronous rectifier A

MP
LE

LE
M ENTATIO
Absolute Maximum Ratings TA = 25°C unless otherwise Noted N

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 14
ID A
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 210 mJ
PD Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2 W
(Note 1c) 1.0
TJ, TSTG Operating and Storage Temperature -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
FDS8690 FDS8690 13” 12mm 2500 units

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDS8690 Rev. B
 FDS8690 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
∆BVDSS Breakdown Voltage Temperature ID = 250µA, referenced to
34.3 mV/°C
∆TJ Coefficient 25°C
IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.6 3 V
∆VGS(th) Gate to Source Threshold Voltage ID = 250µA, referenced to
- 4.5 mV/°C
∆TJ Temperature Coefficient 25°C
VGS = 10V, ID = 14A 6.3 7.6
VGS = 4.5V, ID = 11.5A 8.6 11.4
rDS(ON) Drain to Source On Resistance mΩ
VGS = 10V, ID = 14A,
9.0 10.9
TJ = 125°C

Dynamic Characteristics
Ciss Input Capacitance 1260 1680 pF
VDS = 15V, VGS = 0V,
Coss Output Capacitance 535 715 pF
f = 1MHz
Crss Reverse Transfer Capacitance 80 120 pF
RG Gate Resistance f = 1MHz 1.1 Ω

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time VDS = 15V, ID = 1A, 8.0 16 ns
tr Rise Time VGS = 10V, RGS = 6Ω 1.8 10 ns
td(off) Turn-Off Delay Time 26 42 ns
tf Fall Time 19 35 ns
VDS = 15V, VGS = 10V
Qg Total Gate Charge 18.8 27 nC
ID = 14A
Qg Total Gate Charge VDS = 15V, VGS = 5V 10 14 nC
Qgs Gate to Source Gate Charge ID = 14A 3.5 nC
Qgd Gate to Drain Charge 2.9 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A 0.7 1.2 V
trr Reverse Recovery Time IF = 14A, di/dt = 100A/µs 45 ns
Qrr Reverse Recovery Charge IF = 14A, di/dt = 100A/µs 33 nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

a) 50°C/W when b)105°C/W when c) 125°C/W when

mounted on a 1 in2 mounted on a .04 in2 mounted on a
pad of 2 oz copper pad of 2 oz copper minimun pad

2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
3. Starting TJ = 25oC, L = 3mH, IAS = 11.8A , VDD = 24V, VGS = 10V.

2 www.fairchildsemi.com
FDS8690 Rev. B
 FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

3.2

DRAIN TO SOURCE ON-RESISTANCE

100
VGS = 4V PULSE DURATION = 80µs
VGS = 3.5V 2.8 VGS = 3.0V DUTY CYCLE = 0.5%MAX
80
ID, DRAIN CURRENT (A)

VGS = 4.5V

NORMALIZED
2.4 VGS = 3.5V
60 VGS = 10V
2.0
VGS = 3V VGS = 4V
40
1.6

20 VGS = 4.5V
PULSE DURATION = 80µs 1.2 VGS = 10V
DUTY CYCLE = 0.5%MAX

0 0.8
0 1 2 3 4 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normal On-Resistance vs Drain Current

and Gate Voltage

1.6 60
DRAIN TO SOURCE ON-RESISTANCE

ID = 14A ID = 50A PULSE DURATION = 80µs

VGS = 10V DUTY CYCLE = 0.5%MAX
rDS(on), DRAIN TO SOURCE

50
1.4
ON-RESISTANCE (mΩ)

40
NORMALIZED

1.2
30
1.0
20
TJ = 150oC
0.8
10
TJ = 25oC
0.6 0
-80 -40 0 40 80 120 160 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

100 1000
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs VGS = 0V

ID, DRAIN CURRENT (A)

80 DUTY CYCLE = 0.5%MAX 100

60 10
TJ = 150oC
TJ = 150oC
40 1 TJ = 25oC

TJ = 25oC
20 0.1 TJ = -55oC

TJ = -55oC
0 0.01
1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage

vs Source Current

3 www.fairchildsemi.com
FDS8690 Rev. B
 FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

10 4000
VGS, GATE TO SOURCE VOLTAGE(V)

Ciss
8
1000

CAPACITANCE (pF)
VDD = 15V
6 VDD = 10V Coss

4 100
VDD = 20V
Crss

2 f = 1MHz
VGS = 0V
0 10
0 5 10 15 20 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

40 200
100 10us
IAS, AVALANCHE CURRENT(A)

ID, DRAIN CURRENT (A)

100us
10
10
TJ = 25oC
1ms
1
10ms

TJ = 125oC 100ms
0.1 OPERATION IN THIS 1s
SINGLE PULSE
AREA MAY BE TJ = MAX RATED DC
LIMITED BY rDS(on)
TA = 25oC
1 0.01
-2 -1 0 1 2 3
10 10 10 10 10 10 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Unclamped Inductive Switching Figure 10. Forward Bias Safe Operating Area
Capability

15 10000
TA = 25oC
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10V
FOR TEMPERATURES
12
ID, DRAIN CURRENT (A)

VGS = 10V ABOVE 25oC DERATE PEAK

1000
CURRENT AS FOLLOWS:

9 150 – T A
I = I25 ------------------------
100 125
VGS = 4.5V
6

10
3 o
RθJA = 50 C/W SINGLE PULSE

0 1
-5 -4 -3 -2 -1 0 1 2 3
25 50 75 100 125 150 10 10 10 10 10 10 10 10 10
TA, AMBIENT TEMPERATURE(oC) t, PULSE WIDTH (s)

Figure 11. Maximum Continuous Drain Current vs Figure 12. Single Pulse Maximum Power
Ambient Temperature Dissipation

4 www.fairchildsemi.com
FDS8690 Rev. B
 FDS8690 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL

0.2
0.1
IMPEDANCE, ZθJA

0.1 0.05
PDM
0.02
0.01
t1
0.01 t2
SINGLE PULSE NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA

1E-3
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve

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FDS8690 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I18