1.
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Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1
/ Kanisauskas, K (Oxford U. ; Glasgow U.) ; Affolder, A (Liverpool U.) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Bello, F Di (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (CERN ; MIT) ; Buttar, C (Glasgow U.) et al.
CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. [...]
2017 - 18 p.
- Published in : JINST 12 (2017) P02010
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2.
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Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade
/ Liang, Z (UC, Santa Cruz, Inst. Part. Phys. ; Beijing, Inst. High Energy Phys.) ; Affolder, A (Liverpool U.) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (Liverpool U. ; CERN) ; Buttar, C (Glasgow U.) et al.
This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. [...]
2016 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 156-160
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.156-160
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3.
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Charge collection studies in irradiated HV-CMOS particle detectors
/ Affolder, A (Liverpool U.) ; Andelković, M (Nis U.) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Caragiulo, P (SLAC) ; Cindro, V (Stefan Inst., Ljubljana) ; Das, D (Rutherford) et al.
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. [...]
IOP, 2016 - 18 p.
- Published in : JINST 11 (2016) P04007
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4.
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Charge collection in irradiated HV-CMOS detectors
/ Hiti, B (Stefan Inst., Ljubljana) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) et al.
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . [...]
Elsevier, 2019 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 214-218
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.214-218
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5.
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Study of CMOS strip sensor for future silicon tracker
/ Han, Y (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Zhu, H (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) et al.
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. [...]
2020 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 981 (2020) 164520
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164520
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6.
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Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project
/ Huffman, B T (U. Oxford (main)) ; Affolder, A (U. Liverpool (main)) ; Arndt, K (U. Oxford (main)) ; Bates, R (Glasgow U.) ; Benoit, M (U. Geneva (main)) ; Di Bello, F (U. Geneva (main)) ; Blue, A (Glasgow U.) ; Bortoletto, D (U. Oxford (main)) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) et al.
The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. [...]
AIDA-2020-PUB-2016-011.-
Geneva : CERN, 2016 - 14 p.
- Published in : JINST 11 (2016) C02005
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02005
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7.
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A Prototype Front-End Readout Chip for Silicon Microstrip Detectors Using an Advanced SiGe Technology
/ Grillo, A A (UC, Santa Cruz, Inst. Part. Phys) ; Spencer, E (UC, Santa Cruz, Inst. Part. Phys) ; Daniel, L (UC, Santa Cruz, Inst. Part. Phys) ; Horn, G (UC, Santa Cruz, Inst. Part. Phys) ; Martchovsky, A (UC, Santa Cruz, Inst. Part. Phys) ; Martinez-McKinney, F (UC, Santa Cruz, Inst. Part. Phys) ; Sadrozinski, H F W (UC, Santa Cruz, Inst. Part. Phys) ; Seiden, A (UC, Santa Cruz, Inst. Part. Phys) ; Wilder, M (UC, Santa Cruz, Inst. Part. Phys)
The upgrade of the ATLAS detector for the high luminosity upgrade of the LHC will require a rebuild of the Inner Detector as well as replacement of the readout electronics of the Liquid Argon Calorimeter and other detector components. [...]
ATL-UPGRADE-PROC-2009-005.
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CERN, 2009. - 5 p.
Original Communication (restricted to ATLAS) - Full text - Published version from CERN
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8.
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9.
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Comparison of 35 and 50 ${\mu}$m thin HPK UFSD after neutron irradiation up to $6•10^15$ $neq/cm^2$
/ Zhao, Y. (UC, Santa Cruz, Inst. Part. Phys.) ; Cartiglia, N. (UC, Santa Cruz, Inst. Part. Phys.) ; Estrada, E. (UC, Santa Cruz, Inst. Part. Phys.) ; Galloway, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Gee, C. (UC, Santa Cruz, Inst. Part. Phys.) ; Goto, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Luce, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Mazza, S.M. (UC, Santa Cruz, Inst. Part. Phys.) ; Mckinney-Martinez, F. (UC, Santa Cruz, Inst. Part. Phys.) ; Rodriguez, R. (UC, Santa Cruz, Inst. Part. Phys.) et al.
We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. [...]
arXiv:1803.02690.-
2019-04-21 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 387-393
Fulltext: arXiv:1803.02690 - PDF; 1803.02690 - PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.387-393
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10.
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A double-sided, shield-less stave prototype for the ATLAS Upgrade strip tracker for the High Luminosity LHC
/ Díez, S (LBNL, Berkeley) ; Haber, C H (LBNL, Berkeley) ; Witharm, R (LBNL, Berkeley) ; Affolder, A A (Liverpool U.) ; Allport, P P (Liverpool U.) ; Anghinolfi, F (CERN) ; Bates, R (Glasgow U.) ; Beck, G (Queen Mary, U. of London) ; Benitez, V (Barcelona, Inst. Microelectron.) ; Bernabeu, J (Valencia U., IFIC) et al.
A detailed description of the integration structures for the barrel region of the silicon strips tracker of the ATLAS Phase-II upgrade for the upgrade of the Large Hadron Collider, the so-called High Luminosity LHC (HL-LHC), is presented. This paper focuses on one of the latest demonstrator prototypes recently assembled, with numerous unique features. [...]
2014
- Published in : JINST 9 (2014) P03012
IOP Open Access article: PDF;
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