CERN Accelerating science

Article
Report number AIDA-2020-PUB-2016-011
Title Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project
Author(s) Huffman, B T (U. Oxford (main)) ; Affolder, A (U. Liverpool (main)) ; Arndt, K (U. Oxford (main)) ; Bates, R (Glasgow U.) ; Benoit, M (U. Geneva (main)) ; Di Bello, F (U. Geneva (main)) ; Blue, A (Glasgow U.) ; Bortoletto, D (U. Oxford (main)) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) Show all 58 authors
Publication 2016
Imprint 2016-02-02
Number of pages 14
In: JINST 11 (2016) C02005
In: Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02005
DOI 10.1088/1748-0221/11/02/C02005
Subject category Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors
Accelerator/Facility, Experiment CERN HL-LHC ; ATLAS
Abstract The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.
Copyright/License publication: © 2016-2024 CERN (License: CC-BY-3.0)

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 Record created 2016-12-14, last modified 2022-08-10


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