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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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2.
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Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade
/ Kim, D (Dongguk U. ; Yonsei U.) ; Rinella, G Aglieri (CERN) ; Cavicchioli, C (CERN) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Cagliari) ; Degerli, Y (IRFU, Saclay) ; Dorokhov, A (Strasbourg, IPHC) ; Flouzat, C (IRFU, Saclay) ; Gajanana, D (NIKHEF, Amsterdam) ; Gao, C (Hua-Zhong Normal U.) et al.
ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m(2) tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. [...]
2016
- Published in : JINST 11 (2016) C02042
IOP Open Access article: PDF;
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02042
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3.
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Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.-
2024-09-21 - 40 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
Fulltext: 2403.08952 - PDF; Publication - PDF;
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4.
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5.
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Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC
/ Demaria, N (INFN, Turin) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) ; Menouni, M (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) ; Wang, A (Marseille, CPPM) ; Bomben, M (Paris U., VI-VII) et al.
/RD53
This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. [...]
FERMILAB-CONF-16-622-PPD.-
2016
- Published in : JINST 11 (2016) C12058
IOP Open Access article: PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C12058
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6.
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Digital Pixel Test Structures implemented in a 65 nm CMOS process
/ Rinella, Gianluca Aglieri (CERN) ; Andronic, Anton (Munster U.) ; Antonelli, Matias (INFN, Trieste ; Trieste U.) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste ; Trieste U.) ; Becht, Pascal (U. Heidelberg (main)) ; Beole, Stefania (Turin U. ; INFN, Turin) ; Braach, Justus (CERN ; Hamburg U.) ; Buckland, Matthew Daniel (INFN, Trieste ; Trieste U.) ; Buschmann, Eric (CERN) et al.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D; on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. [...]
arXiv:2212.08621.-
2023-08-04 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168589
Fulltext: 2212.08621 - PDF; Publication - PDF;
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7.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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8.
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Design of analog front-ends for the RD53 demonstrator chip
/ Gaioni, L (Bergamo U. ; INFN, Pavia) ; De Canio, F (Bergamo U. ; INFN, Pavia) ; Nodari, B (Bergamo U. ; INFN, Pavia) ; Manghisoni, M (Bergamo U. ; INFN, Pavia) ; Re, V (Bergamo U. ; INFN, Pavia) ; Traversi, G (Bergamo U. ; INFN, Pavia) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) et al.
The RD53 collaboration is developing a large scale pixel front-end chip, which will be a tool to evaluate the performance of 65 nm CMOS technology in view of its application to the readout of the innermost detector layers of ATLAS and CMS at the HL-LHC. Experimental results of the characterization of small prototypes will be discussed in the frame of the design work that is currently leading to the development of the large scale demonstrator chip RD53A to be submitted in early 2017. [...]
SISSA, 2017 - 14 p.
- Published in : PoS Vertex 2016 (2017) 036
Fulltext: PDF; External link: PoS server
In : VERTEX 2016, La Biodola, Italy, 25 - 30 Sep 2016, pp.036
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9.
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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10.
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Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades
/ Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al.
/RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p.
- Published in : PoS TWEPP-17 (2017) 005
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005
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