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CERN Document Server 找到 2,035 筆記錄  1 - 10下一個最後  跳到記錄: 檢索需時 0.60 秒. 
1.
(100)
Modeling of an integrated active feedback preamplifier in a 025 mu m CMOS technology at cryogenic temperatures / Saramad, Shahyar ; Anelli, G ; Bucher, M ; Despeisse, Matthieu ; Jarron, Pierre ; Pelloux, Nicolas ; Rivetti, A
This paper describes the modeling of a standard 0.25 mu m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). [...]
2003 - Published in : IEEE Trans. Nucl. Sci. 50 (2003) 1290-6 IEEE Published version, local copy: PDF;
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2.
(91)
A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology / Anelli, G ; Borer, K ; Casagrande, L ; Despeisse, Matthieu ; Jarron, Pierre ; Pelloux, Nicolas ; Saramad, Shahyar
We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. [...]
2003 - Published in : Nucl. Instrum. Methods Phys. Res., A 512 (2003) 117-128
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3.
(26)
Front-end counting mode electronics for CdZnTe sensor readout / Moraes, Danielle ; Jarron, Pierre ; Kaplon, Jan
The development of a front-end circuit optimized for CdZnTe detector readout, implemented in 0.25 mu m CMOS technology, is reported. The ASIC comprises 17 channels of a charge sensitive amplifier with an active feedback, followed by a gain-shaper stage and a discriminator with a 5 bit fine-tune DAC. [...]
2004
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004, pp.152-155 (v.1)
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4.
(22)
Hydrogenated amorphous silicon sensors based on thin film on ASIC technology / Despeisse, M (CERN) ; Moraes, D ; Anelli, G ; Jarron, P ; Kaplon, J ; Rusack, R ; Saramad, S ; Wyrsch, N
The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. [...]
2006
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1389-1394
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5.
(16)
An 80 Mbit/s radiation-tolerant optical receiver for the CMS digital optical link / Faccio, F ; Moreira, P ; Marchioro, A
The CMS tracker slow control system will use approximately 1000 digital optical links for the transmission of timing, trigger and control signals. In this system, the 80 Mbit/s optical receiver at the detector end of each optical link has to be radiation hard since it will operate in the severe radiation environment of the CMS tracker (10 Mrad in 10 years). [...]
Geneva : CERN, 2000 - Published in : Proc. SPIE 4134 (2000) 185-93 Fulltext: PDF;
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6.
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Low noise, low power front end electronics for pixelized TFA sensors / Poltorak, K (CERN) ; Ballif, C (EPFL, Lausanne) ; Dabrowski, W (AGH-UST, Cracow) ; Despeisse, M (EPFL, Lausanne) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Wyrschb, N (EPFL, Lausanne)
Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on top of the readout ASIC, TFA shows the similarity to MAP imagers, allowing, however, more sophisticated front–end circuitry to extract the signals, like in case of Hybrid Pixel technology. [...]
CERN, 2009 Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.72-78 (CERN-2009-006)
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7.
(13)
A ferroelectric memory technology for embedded LSI / Kunio, T ; Endo, N
We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. [...]
1999 - Published in : NEC Res. Dev.: 40 (1999) , no. 3, pp. 299-303
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8.
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Pixel readout chips in deep submicron CMOS for ALICE and LHCb tolerant to 10 mrad and beyond / Snoeys, W ; Burns, M ; Campbell, M ; Cantatore, E ; Cencelli, V ; Dinapoli, R ; Heijne, Erik H M ; Jarron, Pierre ; Lamanna, P ; Minervini, D et al.
The ALICE1LHCB chip is a mixed-mode integrated circuit designed to read out silicon pixel detectors for two different applications: particle tracking in the ALICE Silicon Pixel Detector and particle identification in the LHCb Ring Imaging Cherenkov detector. To satisfy the different needs for these two experiments, the chip can be operated in two different modes. [...]
Geneva : CERN, 2001 - Published in : Nucl. Instrum. Methods Phys. Res., A 466 (2001) 366-75
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9.
(10)
Fast CMOS binary front-end for silicon strip detectors at LHC experiments / Kaplon, Jan ; Dabrowski, Wladyslaw
We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. [...]
2004 Fulltext: PDF;
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004, pp.34-38 (v.1)
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10.
(9)
A linear laser-driver array for optical transmission in the LHC experiments / Cervelli, G ; Marchioro, A ; Moreira, P ; Vasey, F
A 4-way linear laser driver has been designed and implemented in a commercial 0.25 mu m CMOS technology. The full-custom IC is intended for analogue and digital data transmission as part of the 50 000 optical fibre links of the CMS particle tracking system. [...]
2000
In : 47th IEEE Nuclear Science Symposium and Medical Imaging Conference, Lyons, France, 15 - 20 Oct 2000, pp.9/145-9/149 (v.2)
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