| 主頁 > Hydrogenated amorphous silicon sensors based on thin film on ASIC technology |
| Article | |
| Title | Hydrogenated amorphous silicon sensors based on thin film on ASIC technology |
| Author(s) | Despeisse, M (CERN) ; Moraes, D ; Anelli, G ; Jarron, P ; Kaplon, J ; Rusack, R ; Saramad, S ; Wyrsch, N |
| Publication | 2006 |
| In: | 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1389-1394 |
| Subject category | Detectors and Experimental Techniques |
| Abstract | The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the sensor and results are presented. Finally, direct detection of 5.9 keV X-rays with TFA detectors based on an ASIC integrating low noise pre-amplifiers (27 e/sup negative r.m.s.) are shown. |