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Advances in Materials, Structures and Applications of Flexible Photodetectors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Electronic Sensors".

Deadline for manuscript submissions: 28 February 2025 | Viewed by 1054

Special Issue Editors

School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: microenergy and microsensor components; new photoelectric detection and imaging devices; electronic device defect detection technology and equipment

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Guest Editor
Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, China
Interests: microsystems and micromanufacturing; MEMS testing; packaging and reliability; precision instruments and equipment; condition monitoring and fault diagnosis; signal analysis

Special Issue Information

Dear Colleagues,

Flexible photodetectors are a promising class of devices that have gained significant traction due to their ability to detect and convert light into electrical signals while maintaining flexibility. The ability to conform to various shapes and surfaces makes them ideal for integrating into wearable devices, flexible displays, biomedical sensors, and many other emerging technologies. The field of flexible photodetectors has witnessed remarkable advancements in materials, structures, and diverse applications.

This Special Issue aims to present the latest developments in this rapidly evolving field. We welcome both original research papers and review articles that showcase the significant developments in these fields.

Dr. Bo Sun
Prof. Dr. Tielin Shi
Guest Editors

Manuscript Submission Information

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Keywords

  • X-ray photodetectors
  • infrared photodetectors
  • ultraviolet photodetectors
  • graphene photodetectors
  • printable photodetectors
  • broadband photodetectors
  • self-powered photodetectors
  • large-scale photodetector arrays
  • CMOS-integrated photodetectors
  • flexible perovskite photodetectors
  • polarization-sensitive photodetectors
  • self-powered flexible photodetectors
  • photodetectors based on nanostructured materials

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Published Papers (1 paper)

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Research

13 pages, 3309 KiB  
Article
Design of an Electronic Interface for Single-Photon Avalanche Diodes
by Salvatore A. Pullano, Giuseppe Oliva, Twisha Titirsha, Md Maruf Hossain Shuvo, Syed Kamrul Islam, Filippo Laganà, Antonio La Gatta and Antonino S. Fiorillo
Sensors 2024, 24(17), 5568; https://doi.org/10.3390/s24175568 - 28 Aug 2024
Viewed by 673
Abstract
Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations [...] Read more.
Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5–0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD. Full article
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