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CERN Document Server 2,008 записей найдено  1 - 10следующийконец  перейти к записи: Поиск длился 1.38 секунд. 
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Merits of CMOS/SIMOX technology for low-voltage SRAM macros / Kumagai, K ; Iwaki, H ; Yamada, T ; Nakamura, H ; Onishi, H ; Matsubara, Y ; Imai, K ; Kurosawa, S
A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. [...]
1999 - Published in : NEC Res. Dev.: 40 (1999) , no. 3, pp. 287-91
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2.
(71)
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors / Fiutowski, T ; Dabrowski, W
2006 - 13 p. - Published in : JINST 1 (2006) P11001
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3.
(40)
A ferroelectric memory technology for embedded LSI / Kunio, T ; Endo, N
We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. [...]
1999 - Published in : NEC Res. Dev.: 40 (1999) , no. 3, pp. 299-303
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(39)
Statistical Analysis Of Low-voltage Eds Spectrum Images / Anderson, I M
ORNL-CP-97-481. - 1998.
Records from U.S. DOE Office of Scientific and Technical Information
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5.
(37)
Design of an integrated particle detector-cell based on latchup effect / Gabrielli, Alessandro (Univ. Bologna ; INFN, Bologna) ; Demarchi, Danilo (Chilab Lab., Electronics Dep., Politecnico di Torino, Torino)
The paper describes an innovative idea for a silicon pixel detector. The principle is based on latchup effect that is common in to-date CMOS technologies working in a radiation environment. [...]
CERN, 2007 Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Prague, Czech Republic, 03 - 07 Sep 2007, pp.445-447 (CERN-2007-007)
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Characterization of a commercial 65 nm CMOS technology for SLHC applications / Bonacini, S (CERN) ; Valerio, P. (CERN; Rome U.) ; Avramidou, R (Natl. Tech. U., Athens) ; Ballabriga, R (CERN) ; Faccio, F (CERN) ; Kloukinas, K (CERN) ; Marchioro, A (CERN)
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEUs) of a 65 nm CMOS technology have been investigated. Single transistor structures of a variety of dimensions and several basic circuits were designed and fabricated. [...]
AIDA-PUB-2012-002.- Geneva : CERN, 2012 - Published in : JINST 7 (2012) P01015 Fulltext: PDF; IOP Open Access article: PDF;
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(34)
Summary of the experimental results on the Eurisol b 0.35 spoke cavity tests at 4.2 K / Lesrel, J
The document reports on the experimental results of the beta 0.35 spoke cavity at T=4.2 K in vertical cryostat..
EURISOL-08-25-2009-0007. -
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(32)
Specification for the low-voltage distribution switchboards for equipment building no. 3 of the LEP preinjector /
CERN-PS-LPI-JP-Spec-83-29.- Geneva : CERN, 1983 - 28 p. Fulltext: PDF;
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9. Recommendations of the Finance Committee to Council as to the Financing of the 1965 Supplementary Programme
Recommandations du Comité des Finances au Conseil au sujet du financement du programme supplémentaire pour 1965
CERN/0572
28th Session of Council ; 1964
English: PDF
French: PDF
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10. Expenditure in Excess of Provisions
Dépassements de crédits
CERN/FC/0726/Add.
64th Meeting of Finance Committee ; 1964
English: PDF
French: PDF
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