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Design and characterization of the monolithic matrices of the H35DEMO chip
/ Casanova Mohr, R. (IFAE) ; Cavallaro, E. (IFAE) ; Föster, F. (ICREA, IFAE) ; Grinstein, S. (ICREA, IFAE) ; Peric, I. (KIT) ; Puigdengoles, C. (IFAE) ; Terzo, S. (IFAE) ; Vilella, E. (UNILIV)
The H35DEMO chip is a HV/HR-MAPS demonstrator of 18.49 mm x 24.4 mm, fabricated with a 0.35 µm HVCMOS process from AMS in four different substrate resistivities. The chip is divided into four independent matrices with a pixel size of 50 µm x 250 µm. [...]
AIDA-2020-CONF-2019-001.-
Geneva : CERN, 2019
- Published in :
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017
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2.
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A Monolithic HV/HR-MAPS Detector with a Small Pixel Size of 50 µm x 50 µm for the ATLAS Inner Tracker Upgrade
/ Casanova Mohr, Raimon (IFAE) ; Casse, Gianluigi (UNILIV) ; Grinstein, Sebastian (ICREA, IFAE) ; Vilella, Eva (UNILIV) ; Voosebeld, Joost (UNILIV)
This paper presents a HV/HR-MAPS detector developed in the framework of the HV-CMOS collaboration for the ATLAS Inner Tracker update of the HL-LHC era. It was fabricated with a 150 nm HV-CMOS process which includes a layer to isolate the bulk of the PMOS transistors from the collecting node of the sensor. [...]
AIDA-2020-CONF-2019-002.-
Geneva : CERN, 2019
- Published in :
- Published in : PoS: TWEPP-17 (2018) , pp. 039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.039
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3.
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Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
/ Terzo, Stefano (Barcelona, IFAE) ; Benoit, Mathieu (CERN) ; Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Foerster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE) ; Iacobucci, Giuseppe (Barcelona, IFAE) ; Peric, Ivan (KIT, Karlsruhe) ; Puigdengoles, Carles (Barcelona, IFAE) ; Vilella, Eva (Liverpool U.)
High Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications.With respect to hybrid pixel detectors the monolithic approach offers the main advantages of reduced material budget and production costs due to the absence of the bump bonding process. This aspect is important especially when large areas need to be covered as in the tracking detectors of the LHC experiments. [...]
SISSA, 2019 - 5 p.
- Published in : PoS TWEPP2018 (2019) 125
In : Topical Workshop on Electronics for Particle Physics, Antwerp, Belgique, 17 - 21 Sep 2018, pp.125
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4.
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
/ Terzo, S. (Barcelona, IFAE) ; Benoit, M. (Geneva U.) ; Cavallaro, E. (Barcelona, IFAE) ; Casanova, R. (Barcelona, IFAE) ; Di Bello, F.A. (Geneva U.) ; Förster, F. (Barcelona, IFAE) ; Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; Iacobucci, G. (Geneva U.) ; Perić, I. (KIT, Karlsruhe) ; Puigdengoles, C. (Barcelona, IFAE) et al.
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. [...]
arXiv:1811.07817.-
2019-02-13 - 21 p.
- Published in : JINST 14 (2019) P02016
Fulltext: PDF;
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5.
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Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
/ Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Lange, Jörn (Barcelona, IFAE) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Mandić, Igor (Stefan Inst., Ljubljana) ; Puigdengoles, Carles (Barcelona, IFAE) ; Terzo, Stefano (Barcelona, IFAE)
Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). [...]
arXiv:1611.04970.-
2017-01-25 - 11 p.
- Published in : JINST 12 (2017) C01074
Fulltext: PDF; Preprint: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C01074
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6.
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Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
/ Terzo, Stefano (Barcelona, IFAE) ; Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Di Bello, Francesco (Geneva U.) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Períc, Ivan (KIT, Karlsruhe) ; Puigdengoles, Carles (Barcelona, IFAE) ; Ristic, Branislav (Geneva U. ; CERN) ; Pinto, Mateus Vicente Barrero (Geneva U.) et al.
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. [...]
arXiv:1705.05146.-
2017-06-13 - 7 p.
- Published in : JINST 12 (2017) C06009
Fulltext: arXiv:1705.05146_2 - PDF; arXiv:1705.05146 - PDF;
In : Instrumentation for Colliding Beam Physics, Novosibirsk, Russia, 27 Feb - 3 Mar 2017, pp.C06009
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7.
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Status of HVCMOS Developments for ATLAS
/ Peric, Ivan (KIT) ; Blanco, Roberto (KIT) ; Casanova Mohr, Raimon (IFAE) ; Ehrler, Felix (KIT) ; Guezzi Messaoud, Fadoua (UNIGE) ; Kramer, Christian (KIT) ; Leys, Richard (KIT) ; Prathapan, Mridula (KIT) ; Schimassek, Rudolf (KIT) ; Schoning, Andre (UHEI) et al.
This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. [...]
AIDA-2020-PUB-2017-005.-
Geneva : CERN, 2017
- Published in : JINST 12 (2017) C02030
Fulltext: PDF;
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8.
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Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade
/ Vilella, E (Liverpool U.) ; Benoit, M (Geneva U.) ; Casanova, R (Barcelona, IFAE) ; Casse, G (Liverpool U.) ; Ferrere, D (Geneva U.) ; Iacobucci, G (Geneva U.) ; Peric, I (Barcelona, IFAE) ; Vossebeld, J (Liverpool U.)
HV-CMOS sensors can offer important advantages in terms of material budget, granularity and cost for large area tracking systems in high energy physics experiments. This article presents the design and simulated results of an HV-CMOS pixel demonstrator for the High Luminosity-LHC. [...]
2016
- Published in : JINST 11 (2016) C01012
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C01012
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9.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
/ Benoit, M. (Geneva U.) ; Braccini, S. (U. Bern, AEC) ; Casanova, R. (Tsukuba U.) ; Cavallaro, E. (Tsukuba U.) ; Chen, H. (BNL, NSLS) ; Chen, K. (BNL, NSLS) ; Di Bello, F.A. (Geneva U.) ; Ferrere, D. (Geneva U.) ; Frizzell, D. (Oklahoma U.) ; Golling, T. (Geneva U.) et al.
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~\Omega \cdot cm}$. [...]
arXiv:1712.08338.-
2018-12-04 - 18 p.
- Published in : JINST 13 (2018) P12009
Fulltext: 1712.08338 - PDF; fulltext1644830 - PDF; Fulltext from Publisher: PDF; Preprint: PDF;
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10.
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Towards the large area HVCMOS demonstrator for ATLAS ITk
/ Prathapan, M (KIT, Karlsruhe) ; Benoit, M (Geneva U.) ; Casanova, R (Barcelona, IFAE) ; Dannheim, D (CERN) ; Ehrler, F (KIT, Karlsruhe) ; Kiehn, M (Geneva U.) ; Nürnberg, A (KIT, Karlsruhe) ; Pangaud, P (Marseille, CPPM) ; Schimassek, R (KIT, Karlsruhe) ; Vilella, E (U. Liverpool (main)) et al.
High Voltage CMOS (HVCMOS) sensor is a proposed cost effective alternative to the existing hybrid sensors in ATLAS ITk pixel barrel for outer layers. To prove the feasibility of HVCMOS sensors in ATLAS experiment, a large area demonstrator chip is being designed. [...]
Elsevier , 2019 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 936 (2019) 389-391
In : Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.389-391
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