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1.
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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2.
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Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.-
2024-09-21 - 40 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
Fulltext: 2403.08952 - PDF; Publication - PDF;
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3.
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4.
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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5.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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6.
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TDCpix pixel detector ASIC with 100 ps time stamping
/ Rinella, G Aglieri (CERN) ; Bonacini, S (CERN) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Kluge, A (CERN) ; Martin Albarran, E (CERN) ; Morel, M (CERN) ; Noy, M (CERN) ; Perktold, L (CERN) ; Perrin-Terrin, M (CERN) et al.
The TDCpix pixel read-out ASIC contains 1800 pixels arranged in 40 columns and 45 rows with the dimension of 300μm x 300μm. Each pixel contains a preamplifier and shaper circuit with a dynamic range of 0.8 to 10 fC and a rise time of 5 ns, followed by a Leading-Edge discriminator with Time-over-Threshold correction. [...]
2023 - 18 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1053 (2023) 168331
Fulltext: PDF;
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7.
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Digital Pixel Test Structures implemented in a 65 nm CMOS process
/ Rinella, Gianluca Aglieri (CERN) ; Andronic, Anton (Munster U.) ; Antonelli, Matias (INFN, Trieste ; Trieste U.) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste ; Trieste U.) ; Becht, Pascal (U. Heidelberg (main)) ; Beole, Stefania (Turin U. ; INFN, Turin) ; Braach, Justus (CERN ; Hamburg U.) ; Buckland, Matthew Daniel (INFN, Trieste ; Trieste U.) ; Buschmann, Eric (CERN) et al.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D; on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. [...]
arXiv:2212.08621.-
2023-08-04 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168589
Fulltext: 2212.08621 - PDF; Publication - PDF;
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8.
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Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
/ Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.
In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213
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9.
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10.17181/CERN-EP-RDET-2022-006
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10.
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A Readout System for single ALPIDE sensors of the ALICE Inner Tracking System Upgrade
/ Siddhanta, Sabyasachi (INFN, Cagliari) ; Marras, Davide (INFN, Cagliari) ; Puggioni, Carlo (INFN, Cagliari) ; Collu, Alberto (Cagliari U.) ; Usai, Gianluca (Cagliari U. ; INFN, Cagliari) ; Rinella, Gianluca Aglieri (CERN) ; Keil, Markus (CERN) ; Mager, Magnus (CERN) ; Musa, Luciano (CERN) ; Reidt, Felix (CERN) et al.
The ALICE experiment at the CERN LHC is installing a new, fast, ultralight Inner Tracking System made of monolithic active pixel sensors (ALPIDE) during the second long shutdown of the LHC (2019–21) to improve upon the present physics measurements and providing insights to physics. ALPIDE is based on TowerJazz 180 nm technology and is a result of an intensive R&D; programme over the last few years. [...]
2020 - 3 p.
- Published in : 10.1109/NSS/MIC42677.2020.9508095
In : 2020 IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC), Boston, United States, 31 Oct - 7 Nov 2020
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