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Modulating dichroism and optical conductivity in bilayer graphene under intense electromagnetic field irradiation
Authors:
S. Sajad Dabiri,
Hosein Cheraghchi,
Fatemeh Adinehvand,
Reza Asgari
Abstract:
This study explores the impact of a strong perpendicular laser field on the electronic structure and optical conductivity of bilayer graphene. Employing the Floquet-Bloch theorem and a four-band Hamiltonian model, we calculate the optical conductivity, unveiling modified optical properties due to the altered band structure. We investigate the effects of both circularly and linearly polarized dress…
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This study explores the impact of a strong perpendicular laser field on the electronic structure and optical conductivity of bilayer graphene. Employing the Floquet-Bloch theorem and a four-band Hamiltonian model, we calculate the optical conductivity, unveiling modified optical properties due to the altered band structure. We investigate the effects of both circularly and linearly polarized dressing fields on the electronic structure and optical conductivity in the system. Under linear polarization, we observe a notable anisotropy in the band dispersion and optical conductivity, resulting in linear dichroism. In the case of circular polarization, we anticipate the emergence of induced Berry curvature and circular dichroism, especially close to the dynamical gaps. When circularly polarized light is applied alongside a bias potential, the band structure differs for right-handed and left-handed polarization. In this case, the longitudinal optical conductivity remains the same for both, while the transversal optical conductivity exhibits distinct results. Furthermore, the induced Berry curvature and valley asymmetry introduce the potential for generating a valley-polarized current, enabling valley-selective pumping and leading to circular dichroism.
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Submitted 25 March, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Light-induced switch based on edge modes in irradiated thin topological insulators
Authors:
Zahra Askarpour,
Hosein Cheraghchi
Abstract:
We investigate transport properties through nano-ribbons of thin topological insulators irradiated by high frequency light with circular polarization. By using high frequency regime, a coherent and quantized transport through the nano-ribbon is guaranteed and then Lanadauer formalism is applicable. It is demonstrated that the pseudo-spin edge modes inside the band gap can host transmission through…
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We investigate transport properties through nano-ribbons of thin topological insulators irradiated by high frequency light with circular polarization. By using high frequency regime, a coherent and quantized transport through the nano-ribbon is guaranteed and then Lanadauer formalism is applicable. It is demonstrated that the pseudo-spin edge modes inside the band gap can host transmission through this nano-junction which their localization on the top and bottom edges depend strongly on the light polarization. These edge modes persist even if we apply a source-drain bias. Based on this edge selectivity for the current, one can design a light-induced switch with an appropriate on/off ratio of the current which is composed of two scattering regions with opposite light polarization. The local current on each bond shows how the current is passing through the edges and jumps into the opposite edge. Furthermore, some other nano-junctions are proposed as electronic switches which are designed based on the mass term engineering of the scattering region by means of perpendicular magnetization induced by magnetic doping and also structure inversion asymmetry applied on the scattering region.
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Submitted 12 October, 2022;
originally announced October 2022.
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Electric Circuit Simulation of Floquet Topological Insulators
Authors:
S. Sajad Dabiri,
H. Cheraghchi
Abstract:
We present a method for simulating any non-interacting and time-periodic tight-binding Hamiltonian in Fourier space using electric circuits made of inductors and capacitors. We first map the time-periodic Hamiltonian to a Floquet Hamiltonian, which converts the time dimension into a Floquet dimension. In electric circuits, this Floquet dimension is simulated as an extra spatial dimension without a…
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We present a method for simulating any non-interacting and time-periodic tight-binding Hamiltonian in Fourier space using electric circuits made of inductors and capacitors. We first map the time-periodic Hamiltonian to a Floquet Hamiltonian, which converts the time dimension into a Floquet dimension. In electric circuits, this Floquet dimension is simulated as an extra spatial dimension without any time dependency in the electrical elements. The number of replicas needed in the Floquet Hamiltonian depends on the frequency and strength of the drive. We also demonstrate that we can detect the topological edge states (including the anomalous edge states in the dynamical gap) in an electric circuit by measuring the two-point impedance between the nodes. Our method paves a simple and promising way to explore and control Floquet topological phases in electric circuits.
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Submitted 18 August, 2023; v1 submitted 17 August, 2022;
originally announced August 2022.
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Floquet states and optical conductivity of an irradiated two dimensional topological insulator
Authors:
S. Sajad Dabiri,
H. Cheraghchi,
A. Sadeghi
Abstract:
We study the topology of the Floquet states and time-averaged optical conductivity of the lattice model of a thin topological insulator subject to a circularly polarized light using the extended Kubo formalism. Two driving regimes, the off-resonant and on-resonant, and two models for the occupation of the Floquet states, the ideal and mean-energy occupation, are considered. In the ideal occupation…
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We study the topology of the Floquet states and time-averaged optical conductivity of the lattice model of a thin topological insulator subject to a circularly polarized light using the extended Kubo formalism. Two driving regimes, the off-resonant and on-resonant, and two models for the occupation of the Floquet states, the ideal and mean-energy occupation, are considered. In the ideal occupation, the real part of DC optical Hall conductivity is shown to be quantized while it is not quantized for the mean energy distribution. The optical transitions in the Floquet band structure depend strongly on the occupation and also the optical weight which consequently affect all components of optical conductivity. At high frequency regime, we present an analytical calculation of the effective Hamiltonian and also its phase diagram which depends on the tunneling energy between two surfaces. The topology of the system shows rich phases when it is irradiated by a weak on-resonant drive giving rise to emergence of anomalous edge states.
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Submitted 10 August, 2023; v1 submitted 17 August, 2022;
originally announced August 2022.
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Light-induced topological phases in thin films of magnetically doped topological insulators
Authors:
S. Sajad Dabiri,
Hosein Cheraghchi,
Ali Sadeghi
Abstract:
We study the photon-dressed electronic band structure of topological insulator thin films which could be also doped doped by magnetic impurities in response to an off-resonance time-periodic electromagnetic field. The thin films irradiated by a circularly polarized light undergo phase transition, in a driven system made by and a fascinating feature of distinct phases emerges in the phase diagram d…
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We study the photon-dressed electronic band structure of topological insulator thin films which could be also doped doped by magnetic impurities in response to an off-resonance time-periodic electromagnetic field. The thin films irradiated by a circularly polarized light undergo phase transition, in a driven system made by and a fascinating feature of distinct phases emerges in the phase diagram depending on the parameters such as frequency, intensity and polarization of the light. As a particular case, quantum anomalous Hall insulator phase is induced purely by the light-induced mass term with no need to any external magnetic field or even magnetization arising from the doped-doping magnetic impurities. Moreover, a novel phase, quantum pseudo-spin Hall insulator, emerges in the phase diagram leading to anisotropic helical edge states with zero total Chern number. We verify these achievements in the phase diagrams are supported by numerical calculations for a nanoribbon of the thin film for which the edge mode behavior is observed at several points on the phase diagram. The emergence of the mentioned topological phases and the edge modes are further confirmed by both calculating the Hall conductivity by means of the Kubo formula and the Chern number of each band. The effect of light parameters on the Landau level fan diagram in the presence of a perpendicular magnetic field indicates various topological phases occurring at higher Chern numbers.
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Submitted 18 December, 2021;
originally announced December 2021.
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Engineering of topological phases in driven thin topological insulator: Structure inversion asymmetry effect
Authors:
S. Sajad Dabiri,
Hosein Cheraghchi
Abstract:
We investigate the effect of a high frequency electromagnetic field with both of circularly and linearly polarization, on the emergence of quantum phases on thin topological insulators. Simultaneously, the influence of the system parameters (such as magnetic impurity, thickness engineering and structural inversion asymmetry of the potential) on emergence of topological phases is studied. We take o…
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We investigate the effect of a high frequency electromagnetic field with both of circularly and linearly polarization, on the emergence of quantum phases on thin topological insulators. Simultaneously, the influence of the system parameters (such as magnetic impurity, thickness engineering and structural inversion asymmetry of the potential) on emergence of topological phases is studied. We take our attention to the high frequency regime in which it is possible to consider an expansion for the Floquet Hamiltonian in terms of orders of 1/Ω. The topological invariants are determined and it is demonstrated that some phase transitions between quantum anomalous Hall insulator, quantum pseudospin Hall insulator, quantum spin Hall insulator and normal insulator can be induced by altering the aforementioned parameters of the system. To avoid heating process, tuning of the system parameters gives us the opportunity to observe these phase transitions at small intensities of light.
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Submitted 18 December, 2021;
originally announced December 2021.
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Straintronics in graphene nanoribbons
Authors:
Maliheh Azadparvar,
Hosein Cheraghchi
Abstract:
The interplay between uniaxial strain and charging effects in zigzag graphene nanoribbons (ZGNR) is investigated by using non-equilibrium Green's function formalism. The I-V characteristic curves and especially negative differential resistance (NDR) induced by some quantum selection rules are affected by the type, strength and also direction of the applied strain. For the oblique strain, the parit…
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The interplay between uniaxial strain and charging effects in zigzag graphene nanoribbons (ZGNR) is investigated by using non-equilibrium Green's function formalism. The I-V characteristic curves and especially negative differential resistance (NDR) induced by some quantum selection rules are affected by the type, strength and also direction of the applied strain. For the oblique strain, the parity conservation fails while it conserves at the longitudinal and transverse strains. Therefore, in the oblique strain, on-off current ratio drastically decreases in compared to the un-strained case. For the tensile strain along the ribbon axis, $ I_{on}/I_{off} $ ratio increases while for the compressive strain, NDR will be gradually disappeared. This property can be useful for nano-electromechanical switch in which by changing the tensile to compressive strain, current switches between its on and off-current state. Furthermore, under influence of the oblique uniaxial strain, the geometry symmetry of charge accumulation as well as bond local currents will be broken across ZGNR giving rise to a transverse current between upper and lower edges of the nanoribbon. This transverse current would be enhanced by the strain strength where gradient of charge density would be maximum at the off-current state.
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Submitted 4 December, 2019;
originally announced December 2019.
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Non-Linear Spin Susceptibility in Topological Insulators
Authors:
Mahroo Shiranzaei,
Jonas Fransson,
Hosein Cheraghchi,
Fariborz Parhizgar
Abstract:
We theoretically study the effect of impurity resonances on the indirect exchange interaction between magnetic impurities in the surface states of a three-dimensional topological insulator. The interaction is composed of an isotropic Heisenberg, and anisotropic Ising and Dzyaloshinskii-Moriya contributions. We find that all three contributions are finite at the Dirac point, which is in stark contr…
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We theoretically study the effect of impurity resonances on the indirect exchange interaction between magnetic impurities in the surface states of a three-dimensional topological insulator. The interaction is composed of an isotropic Heisenberg, and anisotropic Ising and Dzyaloshinskii-Moriya contributions. We find that all three contributions are finite at the Dirac point, which is in stark contrast to the linear response theory which predicts a vanishing Dzyaloshinskii-Moriya contribution. We show that the spin-independent component of the impurity scattering can generate large values of the DM term in comparison with the Heisenberg and Ising terms, while these latter contributions drastically reduce in magnitude and undergo sign changes. As a result, both collinear and non-collinear configurations are allowed magnetic configurations of the impurities.
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Submitted 7 May, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
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Topological properties and edge states in a driven modified dimerized chain
Authors:
Fatemeh Askari Shahid,
Hosein Cheraghchi
Abstract:
We investigate topological phases induced by a driven electric field coupled to a dimer chain (a model for poly-acetylene) at high frequency regime. It is shown how the topological invariant of the system can be controlled by the field amplitude. Furthermore, in the presence of a time-periodic electric field, the effect of the next-nearest neighbor hopping amplitudes on topological properties is s…
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We investigate topological phases induced by a driven electric field coupled to a dimer chain (a model for poly-acetylene) at high frequency regime. It is shown how the topological invariant of the system can be controlled by the field amplitude. Furthermore, in the presence of a time-periodic electric field, the effect of the next-nearest neighbor hopping amplitudes on topological properties is studied. Breaking of the inversion symmetry causes to remove the degeneracy of zero edge states. The fractional Zak phase which is now measurable by ultra-cold atoms in one dimensional optical lattice is also calculated. For calculating modified band structure, we also develop a general Floquet-Bloch approach for systems under application of a potential with lattice and time translation invariance.
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Submitted 18 September, 2017;
originally announced September 2017.
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Effect of chiral selective tunneling on quantum transport in magnetic topological-insulator thin films
Authors:
Taahere Sabze,
Hosein Cheraghchi
Abstract:
The electronic transport properties in magnetically doped ultra-thin films of topological-insulators is investigated by using Landauer-buttiker formalism. The chiral selective tunneling is addressed in such systems which leads to transport gap and as a consequence current blocking. This quantum blocking of transport occurs when the magnetic states with opposite chirality are aligned energetically.…
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The electronic transport properties in magnetically doped ultra-thin films of topological-insulators is investigated by using Landauer-buttiker formalism. The chiral selective tunneling is addressed in such systems which leads to transport gap and as a consequence current blocking. This quantum blocking of transport occurs when the magnetic states with opposite chirality are aligned energetically. This can be obsereved when an electron tunnels through a barrier or well of magnetic potential induced by the exchange field. It is proved and demonstrated that this chiral transition rule fails when structural inversion asymmetric potential or an in-plane magnetization is turning on. This new finding is useful to interpret quantum transport through topological-insulator thin films especially to shed light on longitudinal conductance behavior of quantum anomalous Hall effect. Besides, one can design electronic devices by means of magnetic topological-insulator thin films based on the chiral selective tunneling leading to negative differential resistance.
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Submitted 29 July, 2017;
originally announced July 2017.
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Effect of asymmetric Fermi velocity on trigonally warped spectrum of bilayer graphene
Authors:
Fatemeh Adinehvand,
Hosein Cheraghchi
Abstract:
We derive an effective Hamiltonian at low energies for bilayer graphene when Fermi velocity manufactured on each layer is different of the velocity measured in pristine graphene. Based on the effective Hamiltonian, we investigate the influence of Fermi velocity asymmetry on the band structure of trigonally warped bilayer graphene in the presence of interlayer applied bias. In this case, the Fermi…
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We derive an effective Hamiltonian at low energies for bilayer graphene when Fermi velocity manufactured on each layer is different of the velocity measured in pristine graphene. Based on the effective Hamiltonian, we investigate the influence of Fermi velocity asymmetry on the band structure of trigonally warped bilayer graphene in the presence of interlayer applied bias. In this case, the Fermi line at low energies is still preserved its threefold rotational symmetry appearing as the three pockets. Furthermore, the interlayer asymmetry in Fermi velocities leads to an indirect band gap which its value is tunable by the velocity ratio of the top to bottom layer. It is also found that one of the origins for emerging the electron-hole asymmetry in the band structure, is the velocity asymmetry which is large around the trigonal pockets.
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Submitted 12 April, 2017;
originally announced April 2017.
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Impurity scattering on the surface of topological insulator thin films
Authors:
Mahroo Shiranzaei,
Fariborz Parhizgar,
Jonas Fransson,
Hosein Cheraghchi
Abstract:
We address the electronic structure of the surface states of topological insulator thin films with embedded local non-magnetic and magnetic impurities. Using the $T$-matrix expansion of the real space Green's function, we derive the local density of electrons states and corresponding spin resolved densities. We show that the effects of the impurities can be tuned by applying an electric field betw…
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We address the electronic structure of the surface states of topological insulator thin films with embedded local non-magnetic and magnetic impurities. Using the $T$-matrix expansion of the real space Green's function, we derive the local density of electrons states and corresponding spin resolved densities. We show that the effects of the impurities can be tuned by applying an electric field between the surface layers. The emerging magnetic states are expected to play an important role both in ferromagnetic mechanism of magnetic topological insulators as well as in its transport properties. In the case of magnetic impurities, we have categorized the possible cases for different spin-directions of the impurities as well as the spin-direction in which the spin resolved density of electron states is calculated and related this to the spin susceptibility of the system.
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Submitted 21 February, 2017;
originally announced February 2017.
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Effect of Rashba splitting on RKKY interaction in topological insulator thin films
Authors:
Mahroo Shiranzaei,
Fariborz Parhizgar,
Hosein Cheraghchi
Abstract:
In this work we have investigated the effect of Rashba splitting on the RKKY interaction in TI thin film both at finite and zero chemical potential. We find that the spin susceptibility of Rashba materials including TI thin film is strongly dependent on the direction of distance vector. Moreover, we find another term in the off-diagonal terms of the spin-susceptibility tensor which in contrast to…
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In this work we have investigated the effect of Rashba splitting on the RKKY interaction in TI thin film both at finite and zero chemical potential. We find that the spin susceptibility of Rashba materials including TI thin film is strongly dependent on the direction of distance vector. Moreover, we find another term in the off-diagonal terms of the spin-susceptibility tensor which in contrast to the well-known DM-like term is symmetric. We show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane and by small chemical doping giving rise to enhance the RKKY term, drastically. We have presented our results for two different situations, namely inter-surface pairing of magnetic impurities as well as intra-surface one. The behavior of these two situations is completely different which we describe it by mapping the density of states of each surface on the band dispersion.
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Submitted 8 February, 2017;
originally announced February 2017.
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Superconducting electron and hole lenses
Authors:
Hosein Cheraghchi,
Hanieh Esmailzadeh,
Ali G. Moghaddam
Abstract:
We show how a superconducting region (S) sandwiched between two normal leads (N), in the presence of barriers, can act as a lens for propagating electron and hole waves by virtue of the so- called crossed Andreev reflection (CAR). The CAR process which is equivalent to the Cooper pair splitting into the two N electrodes provides a unique possibility of constructing entangled electrons in solid sta…
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We show how a superconducting region (S) sandwiched between two normal leads (N), in the presence of barriers, can act as a lens for propagating electron and hole waves by virtue of the so- called crossed Andreev reflection (CAR). The CAR process which is equivalent to the Cooper pair splitting into the two N electrodes provides a unique possibility of constructing entangled electrons in solid state systems. When electrons are locally injected from an N lead, due to the CAR and normal reflection of quasiparticles by the insulating barriers at the interfaces, sequences of electron and hole focuses are established inside another N electrode. This behavior originates from the change of momentum during electron-hole conversion beside the successive normal reflections of electrons and holes due to the barriers. The focusing phenomena studied here is fundamentally different from the electron focusing in other systems like graphene pn junctions. In particular due to the electron-hole symmetry of superconducting state, the focusing of electrons and holes are robust against thermal excitations. Furthermore the effect of superconducting layer width, the injection point position, and barriers strength is investigated on the focusing behavior of the junction. Very intriguingly, it is shown that by varying the barriers strength, one can separately control the density of electrons or holes at the focuses.
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Submitted 22 June, 2016;
originally announced June 2016.
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Nonadiabatic pure spin pumping in zigzag graphene nanoribbons with proximity induced ferromagnetism
Authors:
Hosein Cheraghchi
Abstract:
By combining Floquet theory with Green's function formalism, we present non-adiabatic quantum spin and charge pumping through a zigzag ferromagnetic graphene nanoribbon including a double-barriers structure driven weakly by two local $ac$ gate voltages operating with a phase-lag. Over a wide range of Fermi energies, interesting quantum pumping such as i) pure spin pumping with zero net charge pump…
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By combining Floquet theory with Green's function formalism, we present non-adiabatic quantum spin and charge pumping through a zigzag ferromagnetic graphene nanoribbon including a double-barriers structure driven weakly by two local $ac$ gate voltages operating with a phase-lag. Over a wide range of Fermi energies, interesting quantum pumping such as i) pure spin pumping with zero net charge pumping, ii) pure charge pumping and iii) fully spin polarized pumping can be achieved by tuning and manipulating driving frequency in the non-adiabatic regime. Spin polarized pumping which is measurable using the current technology depends on the competition between the energy level spacing and driving frequency.
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Submitted 24 September, 2015;
originally announced September 2015.
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Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon
Authors:
Vahid Derakhshan,
Hosein Cheraghchi
Abstract:
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results…
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Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magnetoresistance is achievable by changing the alignment of induced magnetization. Application of a perpendicular electric field on the parallel configuration, results in a spin field-effect transistor where a fully spin polarization occurs around the Dirac point. To be comparable our results with the one for monolayer graphene, we demonstrate that the reflection symmetry and so the parity conservation fails in bilayer graphene nanoribbons with the zigzag edges.
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Submitted 9 January, 2014;
originally announced January 2014.
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Control over band structure and tunneling in Bilayer Graphene induced by velocity engineering
Authors:
Hosein Cheraghchi,
Fatemeh Adinehvand
Abstract:
The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is considered as a factor to control the band gap of symmetry-broken bilayer graphene. The band gap is direct and independent of velocity value if velocity modulat…
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The band structure and transport properties of massive Dirac Fermions in bilayer graphene with velocity modulation in space are investigated in presence of the previously created band gap. It is pointed out that the velocity engineering is considered as a factor to control the band gap of symmetry-broken bilayer graphene. The band gap is direct and independent of velocity value if velocity modulated in two layers is set up equally. Otherwise, in the case of interlayer asymmetric velocity, not only the band gap is indirect, but also the electron-hole symmetry fails. This band gap is controllable by the ratio of the velocity modulated in the upper layer to the velocity modulated in the lower layer. In more detail, the shift of momentum from the conduction band edge to the valence band edge can be engineered by the gate bias and velocity ratio. A transfer matrix method is also elaborated to calculate four-band coherent conductance through a velocity barrier possibly subjected to a gate bias. Electronic transport depends on the ratio of velocity modulated inside the barrier to the one for surrounding regions. As a result, a quantum version of total internal reflection is observed for enough thick velocity barriers. Moreover, a transport gap originating from the applied gate bias is engineered by modulating velocity of the carriers in the upper and lower layers.
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Submitted 26 November, 2013;
originally announced November 2013.
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Nonlinear Transport through ultra-narrow Zigzag Graphene Nanoribbons: non-equilibrium charge and bond currents
Authors:
Hosein Cheraghchi
Abstract:
The electronic nonlinear transport through ultra narrow graphene nanoribbons (sub-$10nm$) is studied. A stable region of negative differential resistance (NDR) appears in the I-V characteristic curve of {\it odd} zigzag graphene nanoribbons (ZGNRs) in both positive and negative polarity. This NDR originates from a transport gap inducing by a selection rule which blocks electron transition between…
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The electronic nonlinear transport through ultra narrow graphene nanoribbons (sub-$10nm$) is studied. A stable region of negative differential resistance (NDR) appears in the I-V characteristic curve of {\it odd} zigzag graphene nanoribbons (ZGNRs) in both positive and negative polarity. This NDR originates from a transport gap inducing by a selection rule which blocks electron transition between disconnecting energy bands of ZGNR. Based on this transition rule, on/off ratio of the current increases exponentially with the ribbon length up to $10^5$. In addition, charging effects and also spatial distribution of bond currents was studied by using non-equilibrium Green's function formalism in the presence of e-e interaction at a mean field level. On the other hand, we also performed an {\it ab initio} density functional theory calculation of transmission through a passivated graphene nanoribbon to demonstrate robustness of the transport gap against hydrogen termination of the zigzag edges.
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Submitted 13 November, 2012;
originally announced November 2012.
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Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene
Authors:
Hosein Cheraghchi,
Fatemeh Adinehvand
Abstract:
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the fourband Hamiltonian, conductance is calculated by using Landauer Butikker formula at zero temperature. For parallel configuration of the ferromagnetic layers of…
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We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the fourband Hamiltonian, conductance is calculated by using Landauer Butikker formula at zero temperature. For parallel configuration of the ferromagnetic layers of bilayer graphene, the energy band structure is metallic and spin polarization reaches to its maximum value close to the resonant states, while for antiparallel configuration, the nanojunction behaves as a semiconductor and there is no spin filtering. As a result, a huge magnetoresistance is achievable by altering the configurations of ferromagnetic graphene especially around the band gap.
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Submitted 12 November, 2012;
originally announced November 2012.
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Metallic phase of disordered graphene superlattices with long-range correlations
Authors:
Hosein Cheraghchi,
Amir Hossein Irani,
Sayyed Mahdi Fazeli,
Reza Asgari
Abstract:
Using the transfer matrix method, we study the conductance of the chiral particles through a monolayer graphene superlattice with long-range correlated disorder distributed on the potential of the barriers. Even though the transmission of the particles through graphene superlattice with white noise potentials is suppressed, the transmission is revived in a wide range of angles when the potential h…
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Using the transfer matrix method, we study the conductance of the chiral particles through a monolayer graphene superlattice with long-range correlated disorder distributed on the potential of the barriers. Even though the transmission of the particles through graphene superlattice with white noise potentials is suppressed, the transmission is revived in a wide range of angles when the potential heights are long-range correlated with a power spectrum $S(k)\sim1/k^β$. As a result, the conductance increases with increasing the correlation exponent values gives rise a metallic phase. We obtain a phase transition diagram in which a critical correlation exponent depends strongly on disorder strength and slightly on the energy of the incident particles. The phase transition, on the other hand, appears in all ranges of the energy from propagating to evanescent mode regimes.
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Submitted 7 October, 2010;
originally announced October 2010.
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A Gate-Induced Switch in Zigzag Graphene Naoribbons and Charging Effects
Authors:
Hosein Cheraghchi,
Hanyieh Esmailzade
Abstract:
Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with on/off ratio $\sim 10^6$ for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transp…
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Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with on/off ratio $\sim 10^6$ for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transport between discontinues energy bands. Since the external field is well screened close to the contacts, the NDR is robust against the electrostatic potential. However, for voltages higher than the NDR threshold, due to charge transfer through the edges of ZGNR, screening is reduced such that the external potential can penetrate inside the ribbon giving rise to smaller values of off current. Furthermore, on/off ratio of the current depends on the aspect ratio of the length/width and also edge impurity. Moreover, on/off ratio displays a power law behavior as a function of ribbon length.
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Submitted 7 October, 2010;
originally announced October 2010.
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Negative differential resistance in molecular junctions: application to graphene ribbon junctions
Authors:
Hosein Cheraghchi,
Keivan Esfarjani
Abstract:
Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) lev…
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Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to electrodes becomes asymmetric at high bias due to asymmetry between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels. This causes appearance of an asymmetric potential profile due to a depletion of charge and reduction of screening near the source electrode. With increasing bias, this sharp potential drop leads to an enhanced localization of the HOMO and LUMO states in different parts of the system. The reduction in overlap, caused by localization, results in a significant reduction in the transmission coefficient and current with increasing bias. An atomic chain connected to two Graphene ribbons was investigated to illustrate these effects. For a chain substituting a molecule, an even-odd effect is also observed in the NDR characteristics.
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Submitted 26 May, 2008;
originally announced May 2008.
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Statistical properties of a localization-delocalization transition induced by correlated disorder
Authors:
Hosein Cheraghchi,
S. Mahdi Fazeli
Abstract:
The exact probability distributions of the resistance, the conductance and the transmission are calculated for the one-dimensional Anderson model with long-range correlated off-diagonal disorder at E=0. It is proved that despite of the Anderson transition in 3D, the functional form of the resistance (and its related variables) distribution function does not change when there exists a Metal-Insul…
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The exact probability distributions of the resistance, the conductance and the transmission are calculated for the one-dimensional Anderson model with long-range correlated off-diagonal disorder at E=0. It is proved that despite of the Anderson transition in 3D, the functional form of the resistance (and its related variables) distribution function does not change when there exists a Metal-Insulator transition induced by correlation between disorders. Furthermore, we derive analytically all statistical moments of the resistance, the transmission and the Lyapunov Exponent. The growth rate of the average and typical resistance decreases when the Hurst exponent $H$ tends to its critical value ($H_{cr}=1/2$) from the insulating regime.
In the metallic regime $H\geq1/2$, the distributions become independent of size. Therefore, the resistance and the transmission fluctuations do not diverge with system size in the thermodynamic limit.
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Submitted 12 September, 2006;
originally announced September 2006.
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Scaling properties of one-dimensional off-diagonal disorder
Authors:
Hosein Cheraghchi
Abstract:
Validity of the single parameter scaling (SPS) in one dimensional Anderson model with purely off-diagonal disorder is being studied. It is shown that the localized region with standard symmetry is divided into two regimes: SPS and non-SPS. Scaling relations of the Lyapunov Exponent are proposed for these two regimes. In the non-SPS regime, in additional to the localization length, there exists a…
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Validity of the single parameter scaling (SPS) in one dimensional Anderson model with purely off-diagonal disorder is being studied. It is shown that the localized region with standard symmetry is divided into two regimes: SPS and non-SPS. Scaling relations of the Lyapunov Exponent are proposed for these two regimes. In the non-SPS regime, in additional to the localization length, there exists a new length scale which is related to the integrated density of states. A physical interpretation of the new length is the cross-over length which separates regions with chiral symmetry from those that have standard symmetry.
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Submitted 12 September, 2006; v1 submitted 10 March, 2006;
originally announced March 2006.
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Localization-delocalization transition in a one-dimensional system with long-range correlated off-diagonal disorder
Authors:
H. Cheraghchi,
S. M. Fazeli,
K. Esfarjani
Abstract:
The localization behavior of the one-dimensional Anderson model with correlated and uncorrelated purely off-diagonal disorder is studied. Using the transfer matrix method, we derive an analytical expression for the localization length at the band center in terms of the pair correlation function. It is proved that for long-range correlated hopping disorder, a localization-delocalization transitio…
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The localization behavior of the one-dimensional Anderson model with correlated and uncorrelated purely off-diagonal disorder is studied. Using the transfer matrix method, we derive an analytical expression for the localization length at the band center in terms of the pair correlation function. It is proved that for long-range correlated hopping disorder, a localization-delocalization transition occurs at the critical Hurst exponent H_c= 1/2 when the variance of the logarithm of hopping "σ_{\ln(t)}" is kept fixed with the system size N. Based on numerical calculations, finite size scaling relations are postulated for the localization length near the band center (E \neq 0) in terms of the system parameters: E,N,H, and σ_{\ln(t)}.
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Submitted 22 February, 2006; v1 submitted 12 July, 2005;
originally announced July 2005.
