Effect of chiral selective tunneling on quantum transport in magnetic topological-insulator thin films

Tahere Sabze and Hosein Cheraghchi
Phys. Rev. B 96, 155440 – Published 18 October 2017

Abstract

The electronic transport properties in magnetically doped ultrathin films of topological insulators are investigated by using Landauer-Buttiker formalism. The chiral selective tunneling is addressed in such systems which leads to transport gap and as a consequence current blocking. This quantum blocking of transport occurs when the magnetic states with opposite chirality are aligned energetically. This can be observed when an electron tunnels through a barrier or well of magnetic potential induced by the exchange field. It is proved and demonstrated that this chiral transition rule fails when structural inversion asymmetric potential or an in-plane magnetization is turning on. This finding is useful to interpret quantum transport through topological-insulator thin films especially to shed light on longitudinal conductance behavior of quantum anomalous Hall effect. Besides, one can design electronic devices by means of magnetic topological-insulator thin films based on the chiral selective tunneling leading to negative differential resistance.

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  • Received 22 July 2017

DOI:https://doi.org/10.1103/PhysRevB.96.155440

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Tahere Sabze and Hosein Cheraghchi*

  • School of Physics, Damghan University, P.O. Box 36716-41167, Damghan, Iran

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Issue

Vol. 96, Iss. 15 — 15 October 2017

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