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1.
Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV/HR-CMOS Technology / Feigl, Simon (CERN) ; Peric, Ivan (Heidelberg U.) ; Backhaus, M (CERN) ; Barbero, M (Marseille, CPPM) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Clemens, J C (Marseille, CPPM) ; Liu, J (Marseille, CPPM) ; Muenstermann, D (Geneva U.) ; Pangaud, P (Marseille, CPPM) et al.
SISSA, 2014 - Published in : PoS TIPP2014 (2014) 280 Fulltext: PDF; External link: Published version from PoS
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014, pp.280
2.
High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments / Peric, Ivan (Heidelberg U.) ; Augustin, Heiko (Heidelberg U.) ; Backhaus, Malte (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Benoit, Mathieu (CERN) ; Berger, Niklaus (Heidelberg U.) ; Bompard, Frederic (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Clemens, Jean-Claude (Marseille, CPPM) ; Dannheim, Dominik (CERN) et al.
High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated [...]
2013 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 731 (2013) 131-136
In : 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Inawashiro, Japan, 3 - 7 Sep 2012, pp.131-136
3.
High-voltage pixel sensors for ATLAS upgrade / Perić, I (Heidelberg U.) ; Kreidl, C (Heidelberg U.) ; Fischer, P (Heidelberg U.) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Clemens, J -C (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Liu, J (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) et al.
The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. [...]
2014 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 172-176 Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.172-176
4.
HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results / Liu, J (Marseille, CPPM ; Shandong U.) ; Backhaus, M (CERN ; Bonn U.) ; Barbero, M (Marseille, CPPM) ; Bates, R (Glasgow U.) ; Blue, A (Glasgow U.) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) ; Capeans, M (CERN) ; Clemens, J C (Marseille, CPPM) et al. /HV CMOS
In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 10(34) cm(−)(2) s(−)(1), more than twice the expected Phase I . [...]
2015 - Published in : JINST 10 (2015) C03033 Fulltext: PDF; IOP Open Access article: PDF;
In : 16th International Workshop on Radiation Imaging Detectors, Trieste, Italy, 22 - 26 Jun 2014, pp.C03033
5.
Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology / Miucci, A (Geneva U.) ; Gonella, L. (Bonn U.) ; Hemperek, T. (Bonn U.) ; Hügging, F. (Bonn U.) ; Krüger, H. (Bonn U.) ; Obermann, T. (Bonn U.) ; Wermes, N. (Bonn U.) ; Garcia-Sciveres, M. (LBL, Berkeley) ; Backhaus, M. (CERN) ; Capeans, M. (CERN) et al.
Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. [...]
AIDA-PUB-2014-017.- Geneva : CERN, 2014 - Published in : JINST 9 (2014) C05064 Fulltext: PDF;
In : 15th International Workshop on Radiation Imaging Detectors, Paris, France, 23 - 27 Jun 2013, pp.C05064
6.
Simulation workshop on HV/HR-CMOS TCAD and Geant4 simulations / Casse, G. (UNILIV) ; Peric, I. (KIT)
AIDA-2020-MS7.- Geneva : CERN, 2016 AIDA-2020, 7 Fulltext: PDF;
7.
Simulation tutorial on HV/HR-CMOS TCAD and Geant4 simulations / Casse, Gianluigi (UNILIV) ; Peric, Ivan (KIT)
AIDA-2020-MS48.- Geneva : CERN, 2017 AIDA-2020, 48 Fulltext: PDF;
8.
Design and Realisation of Integrated Circuits for the Readout of Pixel Sensors in High Energy Physics and Biomedical Imaging / Peric, Ivan
Several application specific microchips (ASICs) for the readout of pixel detectors have been designed, tested and described in this thesis [...]
CERN-THESIS-2004-055 - Bonn : Institute for Physics, Bonn University, 2004. - 185 p.

Fulltext - Full text
9.
Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector / Alipour Tehrani, Niloufar (CERN) ; Arfaoui, Samir (CERN) ; Benoit, Mathieu (CERN ; Geneva U.) ; Dannheim, Dominik (CERN) ; Dette, Karola (Tech. U., Dortmund (main)) ; Hynds, Daniel (CERN) ; Kulis, Szymon (CERN) ; Peric, Ivan (KIT, Karlsruhe) ; Petric, Marko (CERN) ; Redford, Sophie (CERN) et al.
The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. [...]
CLICdp-Pub-2015-003.- Geneva : CERN, 2016 - 12. - Published in : Nucl. Instrum. Methods Phys. Res., A 823 (2016) 1-8 Elsevier Open Access article: PDF; Fulltext: PDF;
10.
Development of a charge pump for sensor biasing in a Serial Powering scheme for the ATLAS pixel detector upgrade / Bhat, S (Marseille, CPPM) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Kugathasan, T (CERN) ; Pangaud, P (Marseille, CPPM) ; Pernegger, H (CERN) ; Rozanov, A (Marseille, CPPM) ; Snoeys, W (CERN)
CMOS monolithic pixel detector technology is one of the options considered for the outer layer of an upgraded ATLAS pixel detector in 2026. In this upgrade pixel detector modules will be powered in series by a constant current source to reduce power losses and material budget. [...]
2019 - 6 p. - Published in : JINST 14 (2019) C06014
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018), Taipei, Taiwan, 10 - 14 Dec 2018, pp.C06014

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