Search Results (1,585)

Due to its distinctive structure and unique physicochemical properties, gallium nitride (GaN) has been considered a prospective candidate for lithium storage materials. However, its inferior conductivity and unsatisfactory cycle performance hinder the further application of GaN as a next-generation anode material for lithium-ion batteries (LIBs). To address this, cobalt (Co)-doped GaN (Co-GaN) nanowires have been designed and synthesized by utilizing the chemical vapor deposition (CVD) strategy. The structural characterizations indicate that the doped Co elements in the GaN nanowires exist as Co²⁺ rather than metallic Co. The Co²⁺ prominently promotes electrical conductivity and ion transfer efficiency in GaN. The cycling capacity of Co-GaN reached up to 495.1 mA h g⁻¹ after 100 cycles. After 500 cycles at 10 A g⁻¹, excellent cycling capacity remained at 276.6 mA h g⁻¹. The intimate contact between Co-GaN nanowires and carbon paper enhances the conductivity of the composite. Density functional theory (DFT) calculations further illustrated that Co substitution changed the electron configuration in the GaN, which led to enhancement of the electron transfer efficiency and a reduction in the ion diffusion barrier on the Co-GaN electrode. This doping design boosts the lithium-ion storage performance of GaN as an advanced material in lithium-ion battery anodes and in other electrochemical applications. Full article

This study examines the effect of gallium doping on the phase transformation, transmission, and hardness of commercial multispectral-grade ZnS specimens exposed to Ga₂S₃ vapor. Using secondary ion mass spectrometry, we show that Ga diffusion extends into the subsurface down to several tens of microns. X-ray diffraction patterns reveal minimal to no precipitation of wurtzite, resulting in limited infrared transmission loss after treatment. We report a monotonic increase in Vickers surface microhardness with increasing Ga concentration, reaching values more than double those of untreated windows. Future work will focus on optimizing this process and evaluating its effectiveness in enhancing the durability of ZnS windows under harsh environmental conditions. Full article

This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) systems, and military radar applications. The demand for high-frequency, high-power amplifiers is growing, driven by the global expansion of high-speed data communication and enhanced national security requirements. First, we compare the main GaN HEMT process technologies employed in Ku-band HPA development, categorizing the HPAs into monolithic microwave integrated circuits (MMICs) and internally matched power amplifier modules (IM-PAMs) and examining their respective characteristics. Then, by reviewing the literature, we explore design topologies, major issues like oscillation prevention and bias circuits, and heat sink technologies for thermal management. Our findings indicate that silicon carbide (SiC) substrates with gate lengths of 0.25 μm and 0.15 μm are predominantly used, with ongoing developments enabling MMICs and IM-PAMs to achieve up to 100 W output power and 30% power-added efficiency. Notably, the performance of MMIC power amplifiers is advancing more rapidly than that of IM-PAMs, highlighting MMICs as a promising direction for achieving higher efficiency and integration in future Ku-band applications. This paper can provide insights into the overall key technologies for Ku-band GaN HPA design and future development directions. Full article

As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in the context of high-electron mobility transistors (HEMTs), has attracted considerable attention. However, the ‘self-heating effect’ of GaN HEMTs represents a significant limitation regarding both performance and reliability. Diamond, renowned for its exceptional thermal conductivity, represents an optimal material for thermal management in HEMTs. This paper proposes a novel method for directly depositing diamond films onto N-polar GaN (NP-GaN) epitaxial layers. This eliminates the complexities of the traditional diamond growth process and the need for temporary substrate steps. Given the relative lag in the development of N-polar material growth technologies, which are marked by surface roughness issues, and the recognition that the thermal boundary resistance (TBR_GaN/diamond) represents a critical factor constraining efficient heat transfer, our study has introduced a series of optimizations to enhance the quality of the diamond nucleation layer while ensuring that the integrity of the GaN buffer layer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed to effectively reduce the surface roughness of the NP-GaN base, thereby providing a more favorable foundation for diamond growth. The optimization trends observed in the thermal performance test results are encouraging. Integrating diamond films onto highly smooth NP-GaN epitaxial layers demonstrates a reduction in TBR_GaN/diamond compared to that of diamond layers deposited onto NP-GaN with higher surface roughness that had undergone no prior process treatment. Full article

Being not as popular as other elements, such as cobalt, lithium, and rare earth elements, both gallium and germanium have wide use in target developments/industries, thus making them valuable and strategically critical metals. The principal sources for the recovery of both metals are secondary wastes of the bauxite (gallium) or zinc (germanium) industries; also, their recycling from waste materials is necessary. The characteristics of these materials make hydrometallurgical operations widely useful in recovering both gallium and germanium from the various sources containing them. The present work reviews the most recent applications (in 2024) of the various operations applied to the recovery of gallium or germanium from various resources. Full article

The rare metals gallium and germanium are key strategic metals that are widely used in emerging industries. In this work, a novel hydroxamic acid extractant, BGYW, with low toxicity, was used for the selective solvent extraction of Ga ions and Ge ions from Zn, As, Cu, and Al ions in the solution from zinc smelting. The gallium and germanium ions were extracted efficiently under optimized conditions. Gallium ions were preferentially stripped using sulfuric acid, and germanium ions were stripped using an ammonium fluoride solution. Compared with the commercial extractant YW100, the dissolution loss of BGYW was reduced by 10 times. After 15 cycles, the germanium solvent extraction efficiency of BGYW remained at 100%, and the solvent extraction efficiency of gallium was about 98.7%, while the solvent extraction efficiency of both Ga ions and Ge ions using YW100 decreased to 20% after five cycles. This novel solvent extraction system exhibits considerable promise for application in zinc smelting processes for gallium and germanium solvent extraction. Full article

In this study, we introduce a novel electrochemical sensor combining reduced graphene oxide (rGO) sheets with a bismuth–mercury (Bi/Hg) film, electroplated onto pencil graphite electrodes (PGEs) for the high-sensitivity detection of trace amounts of gallium (Ga³⁺) and indium (In³⁺) in water samples using square wave anodic stripping voltammetry (SWASV). The electrochemical modification of PGEs with rGO and bimetallic Bi/Hg films (ERGO-Bi/HgF-PGE) exhibited synergistic effects, enhancing the oxidation signals of Ga and In. Graphene oxide (GO) was accumulated onto PGEs and reduced through cyclic reduction. Key parameters influencing the electroanalytical performance, such as deposition potential, deposition time, and pH, were systematically optimized. The improved adsorption of Ga³⁺ and In³⁺ ions at the Bi/Hg films on the graphene-functionalized electrodes during the preconcentration step significantly enhanced sensitivity, achieving detection limits of 2.53 nmol L⁻¹ for Ga³⁺ and 7.27 nmol L⁻¹ for In³⁺. The preferential accumulation of each post-transition metal, used in transparent displays, to form fused alloys at Bi and Hg films, respectively, is highlighted. The sensor demonstrated effective quantification of Ga³⁺ and In³⁺ in tap water, with detection capabilities well below the USEPA guidelines. This study pioneers the use of bimetallic films to selectively and simultaneously detect the post-transition metals In³⁺ and Ga³⁺, highlighting the role of graphene functionalization in augmenting metal film accumulation on cost-effective graphite rods. Additionally, the combined synergistic effects of Bi/Hg and graphene functionalization have been explored for the first time, offering promising implications for environmental analysis and water quality monitoring. Full article

Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HEMTs are investigated with the aim of further understanding the benefit of the graded AlGaN channel compared to more conventional GaN channel HEMTs. Our study employed a comprehensive simulation workflow including an extensive calibration of direct current (DC), S-parameter, large signal, and linearity characteristics at 30 GHz. Through device modeling and implementation of circuit-level simulation using Advanced Design System (ADS, 2023) software, both linearity and large signal performances could be mimicked remarkably. In agreement with previous studies, the results show that graded channel technology allows for a modified electron confinement leading to a 3D electron gas (3DEG). Consequently, the electric field peak inside of the channel is reduced without degrading the radio frequency (RF) performance, as the electron velocity is improved, thus offering a more linear transconductance and better linearity performances. As a result, for graded AlGaN channel HEMTs, a 6 dB output power back-off from peak power-added efficiency (PAE) is needed to achieve a carrier with a third-order intermodulation (C/IM3) ratio of 30 dBc against 9 dB for conventional AlGaN/GaN HEMTs with a lower associated PAE. Full article

This paper proposes a gallium nitride (GaN)-based very-high-frequency (VHF) resonant flyback converter with integrated magnetics, which utilizes the parasitic inductance and capacitance to reduce the passive components count and volume of the converter. Both the primary leakage inductance and the secondary leakage inductance of the transformer are utilized as the resonance inductor, while the parasitic capacitance of the power devices is utilized as the resonance capacitor. An analytical circuit model is proposed to determine the electrical parameters of the transformer so as to achieve zero voltage switching (ZVS) and zero current switching (ZCS). Furthermore, an air-core transformer was designed using the improved Wheeler’s formula, and finite element analyses were carried out to fine-tune the structure to achieve the accurate design of the electrical parameters. Finally, a 30 MHz, 15 W VHF resonant flyback converter prototype is built with an efficiency of 83.1% for the rated power. Full article

This study presents an innovative approach to utilize coal gasification coarse slag (CGCS) for efficient and low-cost gallium extraction. Using a one-step acid leaching process, mesoporous silica with a surface area of 258 m²/g and a pore volume of 0.15 cm³/g was synthesized. The properties of CGCS before and after acid leaching were characterized through SEM, FTIR, XRD, and BET analyses, with optimal conditions identified for maximizing specific surface area and generating saturated silanol groups. The prepared mesoporous silica demonstrated a 99% Ga(III) adsorption efficiency. Adsorption conditions were optimized, and adsorption kinetics, isotherms, and competitive adsorption behaviors were evaluated. Competitive adsorption with vanadium suggests potential application in Ga(III) extraction from vanadium-rich waste solutions. Furthermore, the recyclability of both the acid and adsorbent was explored, with the adsorbent maintaining over 85% adsorption efficiency after five cycles. The adsorption mechanism was further elucidated through SEM-EDS, XPS, and FTIR analyses. This work not only advances resource recovery from industrial waste but also offers a sustainable method for gallium extraction with industrial applications. Full article

Glioblastoma (GBM) is the most common primary brain malignancy in the U.S. with a 5-year overall survival < 5% despite an aggressive standard of care. Laser interstitial thermal therapy (LITT) is a surgical approach to treating GBM that has gained traction, providing a safe option for reducing intracranial tumor burden. LITT is believed to potentially modulate GBM immune responses; however, the biochemical mechanisms underlying the modulation of immune checkpoints in GBM cells have been poorly characterized. The present study aimed to preliminarily evaluate the effects of thermal therapy and radiation on PD-L1 modulation in vitro, as a function of IDH mutational status. U87 cells and their IDH-mutant counterpart (U87^R132H), which was generated using a crispr-cas9 knock-in approach, were utilized for this preliminary evaluation. Cell heating was achieved by harvesting with trypsin centrifugation where the cell pellets were treated on a heat block for the associated time and temperature. Following thermal therapy, cells were resuspended and irradiated using a 37-Cesium irradiator at 0.6 Gy min⁻¹. Immediately following treatment, cells were either plated as single cells to allow colonies to form, and stained with Coomassie blue to be counted approximately 10–14 days later or harvested for Western blot analysis. Cell lysates were analyzed for PD-L1 expression with respect to various iron metabolic parameters (mortalin (HSPA9), transferrin receptor, and ferritin heavy chain) using a Western blotting approach. In both U87 and U87^R132H cell lines, thermal therapy showed a temperature-dependent cell-killing effect, but U87^R132H cells appeared more sensitive to thermal treatment when treated at 43 °C for 10 min. Moreover, thermal therapy had minimal effects on cell responses to 2 Gy irradiation. Treatment with thermal therapy downregulated PD-L1 expression in U87^R132H cells, which was associated with increased expression of the mitochondrial iron metabolic enzyme, HSPA9. Thermal therapy reversed the radiation-induced overexpression of PD-L1, transferrin receptor, and ferritin heavy chain in U87^R132H cells. No effects were observed in wild-type U87 cells. Moreover, Ga(NO₃)₃ depleted mitochondrial iron content which, in turn, significantly enhanced the sensitivity of U87^R132H cells to thermal therapy and 2 Gy irradiation and caused a significant increase in PD-L1 expression. These results suggest that thermal therapy alone can modulate the immune checkpoint PD-L1. This effect was more pronounced when thermal therapy was combined with radiation. Mechanistically, mitochondrial iron trafficking through HSPA9 may coordinate the regulation of PD-L1 in the context of thermal therapy and ionizing radiation, which can be targeted with gallium-based therapy. These novel, preliminary findings warrant further mechanistic investigations in pre-clinical models of LITT. Full article

This study analyzes the influence of energy generated by emitters on the adhesive properties of varnish coatings in multilayer UV systems. The experimental material, in the form of a cell board finished with UV varnish products, was prepared on a prototype line under the conditions of Borne Furniture in Gorzów Wielkopolski. The roughness and wettability were measured using a OneAttension tensiometer integrated with a topographic module, taking into account the Wenzel coefficient. The adhesion of the examined systems was verified using the PositiTest AT-A automatic pull-off device. Energy consumption by the prototype production line was compared to the standard line, utilizing mercury emitters and mercury emitters with added gallium. Energy consumption was calculated for selected variants. The influence of the Wenzel coefficient on the wettability angle was observed. Significant differences between contact angles (CA and CAc) were noted for coatings formed with sealers (stages I and II). The largest discrepancies, reaching up to 30 degrees, were recorded at the lowest UVA and UVV doses of 26 mJ/cm². In adhesion tests, values below 1 MPa were obtained. Insufficient energy doses in the curing process of UV systems led to delamination between the coatings. Five variants were selected where delamination within the substrate predominated (˃90% A) and were characterized by the lowest energy consumption in the processes. Topographic images helped identify the presence of various surface microstructures at different stages of the production cycle. The greatest energy savings, up to 50%, were achieved in stages III and IV of the technological process. Full article

The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 10⁹/cm² is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W. Full article

This paper presents a simple, fast, and cost-effective method for creating metallic microstructured surfaces by spray-coating a dispersion of copper nanoparticles (CuNPs) onto polymethyl methacrylate (PMMA) substrates, enabling the imbibition-induced wetting of liquid metal. The formation of these microstructured patterns is crucial for the spontaneous wetting of gallium-based liquid metals. Traditional techniques for producing such microstructures often involve complex and costly lithography and vacuum deposition methods. In contrast, this study demonstrates that liquid metal wetting can occur with metal microstructures formed through a straightforward spray-coating process. To immobilize the CuNPs on the polymer substrate, an organic solvent that dissolves the polymer surface was employed as the dispersion medium. The effects of various spray-coating parameters, including distance and time, on the uniformity and immobilization of CuNP films were systematically investigated. Under optimal conditions (120 s of spray time and 10 cm spray distance), CuNPs dispersed in dichloromethane (DCM) yielded uniform and stable microstructured surfaces. The spontaneous wetting of gallium-based liquid metal was observed on the fabricated CuNP film. Additionally, liquid metal selectively wet the CuNP patterns formed by stencil techniques, establishing electrical connections between electrodes. These findings underscore the potential of spray-coating for fabricating metallic surfaces to drive the formation of liquid metal patterns in flexible electronics applications. Full article

It is expected that two-dimensional (2D) metal nitrides (MNs) consisting of the 13th group elements of the periodic table and nitrogen, namely aluminium nitride (AlN), gallium nitride (GaN), indium nitride (InN) and thallium nitride (TlN), have enhanced physical and mechanical properties due to the honeycomb, graphene-like atomic arrangement characteristic of these compounds. The basis for the correct design and improved performance of nanodevices and complex structures based on 2D MNs from the 13th group is an understanding of the mechanical response of their components. In this context, a comparative study to determine the elastic properties of metal nitride nanosheets was carried out making use of the nanoscale continuum modelling (or molecular structural mechanics) method. The differences in the elastic properties (surface shear and Young’s moduli and Poisson’s ratio) found for the 2D 13th group MNs are attributed to the bond length of the respective hexagonal lattice of their diatomic nanostructure. The outcomes obtained contribute to a benchmark in the evaluation of the mechanical properties of AlN, GaN, InN and TlN monolayers using analytical and numerical approaches. Full article