Search Results (53)

Relay protection devices must operate continuously throughout the year without anomalies. With the integration of advanced technology and process chips in secondary equipment, new risks need to be addressed to ensure the reliability of these relay protection devices. One such risk is the impact of α-particles inducing single event effects (SEEs) on the secondary equipment. To date, there has been limited assessment of the effects of α-particles on relay protection devices from a system perspective. This study evaluates the impact of SEE on relay protection devices through a Monte Carlo simulation, which is verified by α-particle radiation, fault injection, and fault tree analysis. It discusses the influence of SEEs with and without hardening measures in place. Additionally, this study examines the soft error probability when the target processor runs both general workloads and specific application workloads. The current research proposes a low-cost and effective reliability assessment method for secondary equipment considering single event effects. The findings provide new insights for the enhancement of future electric power grid systems. Full article

This manuscript focuses on studying the radiation response of the Commercial-off-the-shelf (COTS) AD524CDZ operational amplifier. Total Ionizing Dose (TID) effects were tested using low-dose ⁶⁰Co irradiation. Single-Event Effect (SEE) sensitivity was studied on this operational amplifier using a 105 MeV proton beam. Additionally, further study of the SEE response was carried out using a Two-photon absorption laser to scan some sensitive sectors of the die. For this laser experiment, different gain setups and laser energies were employed to determine how the Single Event Transient (SET) response of the device was affected based on the test configuration. The results from the TID experiments revealed that the studied device remained functional after 100 krads (Si). Proton experiments revealed the studied device exhibited a high SET response with a maximum DC offset SET of about 1.5 V. Laser experiments demonstrated that there was a clear SET reduction when using 10× and 1000× gain setups. Full article

As a prominent focus in high-voltage power devices, SiC MOSFETs have broad application prospects in the aerospace field. Due to the unique characteristics of the space radiation environment, the reliability of SiC MOSFETs concerning single-event effects (SEEs) has garnered widespread attention. In this study, we employed accelerator-heavy ion irradiation experiments to study the degradation characteristics for SEEs of 1.2 kV SiC MOSFETs under different bias voltages and temperature conditions. The experimental results indicate that when the drain-source voltage (V_DS) exceeds 300 V, the device leakage current increases sharply, and even single-event burnout (SEB) occurs. Furthermore, a negative gate bias (V_GS) can make SEB more likely via gate damage and Poole–Frenkel emission (PF), reducing the V_DS threshold of the device. The radiation degradation behavior of SiC MOSFETs at different temperatures was compared and analyzed, showing that although high temperatures can increase the safe operating voltage of V_DS, they can also cause more severe latent gate damage. Through an in-depth analysis of the experimental data, the physical mechanism by which heavy ion irradiation causes gate leakage in SiC MOSFETs was explored. These research findings provide an essential basis for the reliable design of SiC MOSFETs in aerospace applications. Full article

The exposure of spaceborne devices to high-energy charged particles in space results in the occurrence of both a total ionizing dose (TID) and the single-event effect (SEE). These phenomena present significant challenges for the reliable operation of spacecraft and satellites. The rapid advancement of semiconductor fabrication processes and the continuous reduction in device feature size have led to an increase in the significance of the synergistic effects of TID and SEE in static random access memory (SRAM). In order to elucidate the involved physical mechanisms, the synergistic effects of TID and single-event upset (SEU) in a new kind of 130 nm 7T silicon-on-insulator (SOI) SRAM were investigated by means of cobalt-60 gamma-ray and heavy ion irradiation experiments. The findings demonstrate that 7T SOI SRAM is capable of maintaining normal reading and writing functionality when subjected to TID irradiation at a total dose of up to 750 krad(Si). In general, the TID was observed to reduce the SEU cross-section of the 7T SOI SRAM. However, the extent of this reduction was influenced by the heavy ion LET value and the specific writing data pattern employed. Based on the available evidence, it can be proposed that TID preirradiation represents a promising avenue for enhancing the resilience of 7T SOI SRAMs to SEU. Full article

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm²/mg) and Bi ion (LET = 98 MeV·cm²/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron–hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments. Full article

Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation. Full article

In this paper, the single-event burnout (SEB) and reinforcement structure of 1200 V SiC MOSFET (SG-SBD-MOSFET) with split gate and Schottky barrier diode (SBD) embedded were studied. The device structure was established using Sentaurus TCAD, and the transient current changes of single-event effect (SEE), SEB threshold voltage, as well as the regularity of electric field peak distribution transfer were studied when heavy ions were incident from different regions of the device. Based on SEE analysis of the new structural device, two reinforcement structure designs for SEB resistance were studied, namely the expansion of the P+ body contact area and the design of a multi-layer N-type interval buffer layer. Firstly, two reinforcement schemes for SEB were analyzed separately, and then comprehensive design and analysis were carried out. The results showed that the SEB threshold voltage of heavy ions incident from the N+ source region was increased by 16% when using the P+ body contact area extension alone; when the device is reinforced with a multi-layer N-type interval buffer layer alone, the SEB threshold voltage increases by 29%; the comprehensive use of the P+ body contact area expansion and a multi-layer N-type interval buffer layer reinforcement increased the SEB threshold voltage by 33%. Overall, the breakdown voltage of the reinforced device decreased from 1632.935 V to 1403.135 V, which can be seen as reducing the remaining redundant voltage to 17%. The device’s performance was not significantly affected. Full article

Ionizing radiation induces the degradation of electronic systems. For memory devices, this phenomenon is often observed as the corruption of the stored data and, in some cases, the occurrence of sudden increases in current consumption during the operation. In this work, we propose enhanced experimental instrumentation to perform in-depth Single-Event Effects (SEE) monitoring and analysis of electronic systems. In particular, we focus on the Single-Event Latch-up (SEL) phenomena in memory devices, in which current monitoring and control are required for testing. To expose the features and function of the proposed instrumentation, we present results for a case study of an SRAM memory that has been used on-board PROBA-V ESA satellite. For this study, we performed experimental campaigns in two different irradiation facilities with protons and heavy ions, demonstrating the instrumentation capabilities, such as synchronization, high sampling rate, fast response time, and flexibility. Using this instrumentation, we could report the cross section for the observed SEEs and further investigate their correlation with the observed current behavior. Notably, it allowed us to identify that 95% of Single-Event Functional Interrupts (SEFIs) were triggered during SEL events. Full article

The single-event effects (SEEs) of frequency divider circuits and the radiation tolerance of the hardened circuit are studied in this paper. Based on the experimental results of SEEs in InP HBTs, a transient current model for sensitive transistors is established, taking into account the influence of factors such as laser energy, base-collector junction voltage, and radiation position. Moreover, the SEEs of the (2:1) static frequency divider circuit with the InP DHBT process are simulated under different laser energies by adding the transient current model at sensitive nodes. The effect of the time relationship between the pulsed laser and clock signal are discussed. Changes in differential output voltage and the degradation mechanism of unhardened circuits are analyzed, which are mainly attributed to the cross-coupling effect between the transistors in the differential pair. Furthermore, the inverted output is directly connected to the input, leading to a feedback loop and causing significant logic upsets. Finally, an effective hardened method is proposed to provide redundancy and mitigate the impacts of SEEs on the divider. The simulation results demonstrate a notable improvement in the radiation tolerance of the divider. Full article

This work explains that the Coulomb elastic process on the nucleus is a major source of single-event effects (SEE) for protons within the energy range of 1–10 MeV. The infinite range of Coulomb interactions implies an exceptionally high recoil probability. This research seeks to extend the investigations under which the elastic process becomes significant in the energy deposition process by providing a simplified methodology to evaluate the elastic contribution impact on the reliability of electronics. The goal is to derive a method to provide a simple way to calculate and predict the SEE cross-section. At very low energy, we observe a significant increase in the proton differential cross-section. The use of a direct Monte Carlo approach would mainly trigger low energy recoiling ions, and a very long calculation time would be necessary to observe the tail of the spectrum. In this sense, this work provides a simple methodology to calculate the SEE cross-section. The single-event upset (SEU) cross-section results demonstrate a good agreement with the experimental data in terms of shape and order of magnitude for different technological nodes. Full article

This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source. Full article

Static random-access memory (SRAM), a pivotal component in integrated circuits, finds extensive applications and remains a focal point in the global research on single-event effects (SEEs). Prolonged exposure to irradiation, particularly the displacement damage effect (DD) induced by high-energy protons, poses a substantial threat to the performance of electronic devices. Additionally, the impact of proton displacement damage effects on the performance of a six-transistor SRAM with an asymmetric structure is not well understood. In this paper, we conducted an analysis of the impact and regularities of DD on the upset cross-sections of SRAM and simulated the single-event upset (SEU) characteristics of SRAM using the Monte Carlo method. The research findings reveal an overall increasing trend in upset cross-sections with the augmentation of proton energy. Notably, the effect of proton irradiation on the SEU cross-section is related to the storage state of SRAM. Due to the asymmetry in the distribution of sensitive regions during the storage of “0” and “1”, the impact of DD in the two initial states is not uniform. These findings can be used to identify the causes of SEU in memory devices. Full article

With the continuous progress in integrated circuit technology, single-event effect (SEE) has become a key factor affecting the reliability of aerospace integrated circuits. Simulating fault injection using the computer simulation technique effectively reflects the SEE in aerospace integrated circuits. Due to various masking effects, only a small number of faults will result in errors; the traditional method of injecting one fault in one workload execution is inefficient. The method of injecting multiple faults in one workload execution will make it impossible to judge which fault results in errors because the propagation characteristic of SEE and faults may affect each other. This paper proposes an improved multi-point fault injection method to improve simulation efficiency and solve the problems of the general multi-point fault injection method. If one workload execution does not result in errors, multiple faults can be verified by one workload execution. If one workload execution results in errors, a specific grouping method can be used to determine which faults result in errors. The experimental results show that the proposed method achieves a good acceleration effect and significantly improves the simulation efficiency. Full article

This work presents an experimental study of heavy-ion irradiation with different particle linear energy transfer (LET), gate biases, and drain biases. The results reveal that when the irradiation biases are low, the SiC MOSFET does not experience single event effect (SEE) and the electrical properties remain unchanged (the devices are in the safe operating area (SOA)). However, the oxide breakdown voltage of the device is significantly decreased due to the latent damage generated by the irradiation. The experimental results, along with TCAD simulations, suggest that the latent damage induced by the irradiation in the gate oxide is closely related to the peak electric field in the gate oxide at the time of particle incidence. This peak electric field is determined by the potential difference between the two sides of the gate oxide, which is affected by the particle LET, gate biases, and drain biases together. The high potential is determined by the combined effect of the LET and the drain-source voltage. The impact ionization of the particle by the applied electric field causes the accumulation of holes in the JFET oxide, which leads to a decrease in the doping of the N⁻ epitaxial layer and eventually causes a rise in the high potential near the JFET oxide. The low potential is determined by the gate bias, and the negative bias applied to the gate can further increase the potential difference between the two sides of the oxide, causing an increase in the peak electric field in the gate oxide and aggravating the gate oxide damage. Full article

The static random-access memory (SRAM) cells used in the high radiation environment of aerospace have become highly vulnerable to single-event effects (SEE). Therefore, a 12T SRAM-hardened circuit (RHB-12T cell) for the soft error recovery is proposed using the radiation hardening design (RHBD) concept. To verify the performance of the RHB-12T, the proposed cell is simulated by the 28 nm CMOS process and compared with other hardened cells (Quatro-10T, WE-Quatro-12T, RHM-12T, RHD-12T, and RSP-14T). The simulation results show that the RHB-12T cell can recover not only from single-event upset caused by their sensitive nodes but also from single-event multi-node upset caused by their storage node pairs. The proposed cell exhibits 1.14×/1.23×/1.06× shorter read delay than Quatro-10T/WE-Quatro-12T/RSP-14T and 1.31×/1.11×/1.18×/1.37× shorter write delay than WE-Quatro-12T/RHM-12T/RHD-12T/RSP-14T. It also shows 1.35×/1.11×/1.04× higher read stability than Quatro-10T/RHM-12T/RHD-12T and 1.12×/1.04×/1.09× higher write ability than RHM-12T/RHD-12T/RSP-14T. All these improvements are achieved at the cost of a slightly larger area and power consumption. Full article