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Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector
/ Grinstein,S (ICREA, IFAE, ASCR) ; Baselga,M (CNM-IMB) ; Boscardin,M (FBK-CMM) ; Christophersen, M (NRL) ; Da Via, C (UNIMAN) ; Dalla Betta, G.F (UNITN, INFN) ; Darbo,G (INFN) ; Fadeyev,V (SCIPP) ; Fleta,C (FBK-CMM) ; Gemme,C (UNITN) et al.
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) oer advantages over standard
planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years
significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS
Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). [...]
AIDA-PUB-2013-009.-
Geneva : CERN, 2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 28-32
Fulltext: PDF;
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Modeling of radiation damage effects and digitization for 3D silicon pixel ATLAS detectors
/ Giugliarelli, Gilberto (INFN, Udine ; Udine U.)
/ATLAS Collaboration
Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at LHC. They constitute the part of ATLAS closest to the interaction point and for this reason they will be exposed – over their lifetime – to a significant amount of radiation: prior to the HL-LHC, the innermost layers will receive a fluence of 10$^{15}$ n$_{eq}$∕cm$^2$ and their HL-LHC upgrades will have to cope with an order of magnitude higher fluence integrated over their lifetimes. [...]
Elsevier, 2019 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 208-213
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.208-213
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Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors
/ Fernandez-Martinez, Pablo (Barcelona, Inst. Microelectron.) ; Flores, David (Barcelona, Inst. Microelectron.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Greco, Virginia (Barcelona, Inst. Microelectron.) ; Merlos, Angel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.)
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. [...]
arXiv:1510.08626.-
2016-03-17 - 8 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 821 (2016) 93-100
Fulltext: PDF; External link: Preprint
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Study of irradiated 3D pixel sensors from CNM
/ Lasaosa Garcia, Clara (Cantabria Inst. of Phys.)
The High-Luminosity upgrade of the Large Hadron Collider will force the experiments to cope with harsh radiation environments. The CMS Collaboration has decided to install 3D pixel sensors in the innermost barrel layer of the tracking system, which has to face a fluence of $2\times10^{16}\,\textnormal{n}_\textnormal{eq}\textnormal{cm}^\textnormal{-2}$ before replacement. [...]
CMS-CR-2022-086.-
Geneva : CERN, 2022 - 3 p.
Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, It, 22 - 28 May 2022
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Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain
/ Ramos, E. Navarrete (Cantabria Inst. of Phys.) ; Duarte-Campderros, J. (Cantabria Inst. of Phys.) ; Fernández, M. (Cantabria Inst. of Phys.) ; Gómez, G. (Cantabria Inst. of Phys.) ; González, J. (Cantabria Inst. of Phys.) ; Hidalgo, S. (Barcelona, Inst. Microelectron.) ; Jaramillo, R. (Cantabria Inst. of Phys.) ; Martínez Ruiz del Arbol, P. (Cantabria Inst. of Phys.) ; Moll, M. (CERN) ; Quintana, C. (Cantabria Inst. of Phys.) et al.
In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. [...]
arXiv:2406.01267.-
2025-02-15 - 23 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1074 (2025) 170309
Fulltext: PDF;
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Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker
/ Fernandez-Martinez, Pablo (Barcelona, Inst. Microelectron.) ; Ullan, Miguel (Barcelona, Inst. Microelectron.) ; Flores, David (Barcelona, Inst. Microelectron.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.) ; Lynn, David (Brookhaven)
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. [...]
arXiv:1511.00416.-
2016-01-20 - 10 p.
- Published in : JINST 11 (2016) C01043
Fulltext: PDF; IOP Open Access article: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C01043
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