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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
/ Kiehn, Moritz (Geneva U.) ; Di Bello, Francesco Armando (Geneva U.) ; Benoit, Mathieu (Geneva U.) ; Casanova Mohr, Raimon (Barcelona, IFAE) ; Chen, Hucheng (Brookhaven Natl. Lab.) ; Chen, Kai (Brookhaven Natl. Lab.) ; D.M.S., Sultan (Geneva U.) ; Ehrler, Felix (Geneva U. ; KIT, Karlsruhe, IPE) ; Ferrere, Didier (Geneva U.) ; Frizell, Dylan (U. Oklahoma, Norman) et al.
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. [...]
arXiv:1807.05953.-
2019-04-21 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 104-107
Fulltext: PDF; Preprint (v.3, 8 June 2020): PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.104-107
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
/ Benoit, M. (Geneva U.) ; Braccini, S. (U. Bern, AEC) ; Casanova, R. (Tsukuba U.) ; Cavallaro, E. (Tsukuba U.) ; Chen, H. (BNL, NSLS) ; Chen, K. (BNL, NSLS) ; Di Bello, F.A. (Geneva U.) ; Ferrere, D. (Geneva U.) ; Frizzell, D. (Oklahoma U.) ; Golling, T. (Geneva U.) et al.
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~\Omega \cdot cm}$. [...]
arXiv:1712.08338.-
2018-12-04 - 18 p.
- Published in : JINST 13 (2018) P12009
Fulltext: 1712.08338 - PDF; fulltext1644830 - PDF; Fulltext from Publisher: PDF; Preprint: PDF;
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
/ Anders, J. (U. Bern, AEC) ; Benoit, M. (Geneva U.) ; Braccini, S. (U. Bern, AEC) ; Casanova, R. (Barcelona, IFAE) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Di Bello, F.A. (Geneva U.) ; Fehr, A. (U. Bern, AEC) ; Ferrere, D. (Geneva U.) ; Forshaw, D. (U. Bern, AEC) et al.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital..
arXiv:1807.09553.-
2018-10-01 - 14 p.
- Published in : JINST 13 (2018) P10004
Fulltext: fulltext1683864 - PDF; 1807.09553 - PDF; Anders_2018_J._Inst._13_P10004 - PDF; Fulltext from Publisher: PDF;
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A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
/ Iacobucci, Giuseppe (Geneva U.) ; Cardarelli, R. (INFN, Rome2) ; Débieux, S. (Geneva U.) ; Di Bello, F.A. (Geneva U.) ; Favre, Y. (Geneva U.) ; Hayakawa, D. (Geneva U.) ; Kaynak, M. (IHP, Frankfurt) ; Nessi, M. (Geneva U. ; CERN) ; Paolozzi, L. (Geneva U.) ; Rücker, H. (IHP, Frankfurt) et al.
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. [...]
arXiv:1908.09709.-
2019-11-06 - 10 p.
- Published in : JINST 14 (2019) P11008
Fulltext: fulltext1751067 - PDF; 1908.09709 - PDF; Fulltext from Publisher: PDF;
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5.
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
/ Benoit, M. (Geneva U.) ; Braccini, S. (Bern U.) ; Casse, G. (Liverpool U.) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Bello, F.A.Di (Geneva U.) ; Ferrere, D. (Geneva U.) ; Golling, T. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iacobucci, G. (Geneva U.) et al.
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. [...]
arXiv:1611.02669.-
2018-02-08 - 13 p.
- Published in : JINST 13 (2018) P02011
Fulltext: pdf - PDF; 10.1088_1748-0221_13_02_P02011 - PDF; arXiv:1611.02669_2 - PDF; Preprint: PDF; External link: Preprint
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6.
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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
/ Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606.
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18.
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
/ Terzo, S. (Barcelona, IFAE) ; Benoit, M. (Geneva U.) ; Cavallaro, E. (Barcelona, IFAE) ; Casanova, R. (Barcelona, IFAE) ; Di Bello, F.A. (Geneva U.) ; Förster, F. (Barcelona, IFAE) ; Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; Iacobucci, G. (Geneva U.) ; Perić, I. (KIT, Karlsruhe) ; Puigdengoles, C. (Barcelona, IFAE) et al.
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. [...]
arXiv:1811.07817.-
2019-02-13 - 21 p.
- Published in : JINST 14 (2019) P02016
Fulltext: PDF;
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Characterisation of a large area silicon photomultiplier
/ Nagai, A. (Geneva U.) ; Alispach, C. (Geneva U.) ; Barbano, A. (Geneva U.) ; Coco, V. (CERN) ; della Volpe, D. (Geneva U.) ; Heller, M. (Geneva U.) ; Montaruli, T. (Geneva U.) ; Njoh, S. (Geneva U.) ; Renier, Y. (Geneva U.) ; Troyano-Pujadas, I. (Geneva U.)
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (\sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, afterpulse probability. For the measurement of the breakdown voltage, $V_{BD}$, several methods using the current-voltage $IV$ curve are compared, such as the "IV Model", the "relative logarithmic derivative", the "inverse logarithmic derivative", the "second logarithmic derivative", and the "third derivative" models [...]
arXiv:1810.02275.-
2019-12-21 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 948 (2019) 162796
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EUDAQ $-$ A Data Acquisition Software Framework for Common Beam Telescopes
/ Ahlburg, P. (Bonn U.) ; Arfaoui, S. (CERN) ; Arling, J.-H (DESY) ; Augustin, H. (Heidelberg U.) ; Barney, D. (CERN) ; Benoit, M. (Geneva U.) ; Bisanz, T. (Gottingen U., II. Phys. Inst.) ; Corrin, E. (Geneva U.) ; Cussans, D. (Bristol U.) ; Dannheim, D. (CERN) et al.
EUDAQ is a generic data acquisition software developed for use in conjunction with common beam telescopes at charged particle beam lines. Providing high-precision reference tracks for performance studies of new sensors, beam telescopes are essential for the research and development towards future detectors for high-energy physics. [...]
arXiv:1909.13725.-
2020-01-30 - 30 p.
- Published in : JINST 15 (2020) P01038
Fulltext: fulltext1756754 - PDF; 1909.13725 - PDF;
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10.
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
/ Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.-
2022-02-10 - 17 p.
- Published in : JINST 17 (2022) P02019
Fulltext: 2112.08999 - PDF; document - PDF;
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