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CERN Document Server 8 záznamov nájdených  Hľadanie trvalo 0.55 sekúnd. 
1.
Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique / Pape, Sebastian (CERN ; Tech. U., Dortmund (main)) ; García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Wiehe, Moritz (CERN)
The Two-Photon Absorption–Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. [...]
2024 - 17 p. - Published in : Sensors 24 (2024) 5443 Fulltext: PDF;
Úplný záznam - Podobné záznamy
2.
Influence of temperature on measurements of the Two Photon Absorption – Transient Current Technique in silicon planar detectors using a 1550 nm femtosecond fibre laser / Pape, S (CERN ; Dortmund U.) ; Currás, E (CERN) ; García, M Fernández (Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Wiehe, M (CERN)
The effect of temperature on the excess charge carrier generation and collection, injected using two photon absorption at a wavelength of 1550 nm, is investigated in a 285 μm thick, p-type silicon planar detector, with a bulk resistivity of 3.7 kΩ cm. Charge collection measurements are performed for temperatures between −20 °C to 20 °C. [...]
2023 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1053 (2023) 168387 Fulltext: PDF;
Úplný záznam - Podobné záznamy
3.
Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system / Pape, S (CERN ; Dortmund U.) ; García, M Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Montero, R (Basque U., Bilbao) ; Palomo, F R (Seville U.) ; Vila, I (Cantabria Inst. of Phys.) ; Wiehe, M (CERN ; Freiburg U.)
A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. [...]
2022 - 6 p. - Published in : JINST 17 (2022) C08011 Fulltext: PDF;
In : 12th International Conference on Positional Sensitive Detectors, Online, Online, 12 - 17 Sep 2021, pp.C08011
Úplný záznam - Podobné záznamy
4.
High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique / García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (U. Basque Country, Leioa) ; Palomo Pinto, Rogelio (Seville U.) ; Vila, Iván (Cantabria Inst. of Phys.) ; Wiehe, Moritz (CERN)
The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162865
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162865
Úplný záznam - Podobné záznamy
5.
TRACS: A multi-thread transient current simulator for micro strips and pad detectors / Calvo, J (CERN) ; de Castro, P (CERN) ; González-Pardo, A Díez (CERN) ; García, M Fernández (U. Cantabria) ; Moll, M (CERN) ; Senica, U (CERN) ; Vila, I (U. Cantabria)
The requisites at the Large Hadron Collider (LHC) at CERN have driven silicon tracking detectors to the fringe of the modern technology. The next upgrade of the LHC to a 10 times increased luminosity of 7.5 ×1034cm−2s−1 will require semiconductor detectors with substantially improved radiation hardness. [...]
2019 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 917 (2019) 77-85 Fulltext from Publisher: PDF;
Úplný záznam - Podobné záznamy
6.
High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT) / García, Marcos Fernández (Cantabria Inst. of Phys.) ; Sánchez, Javier González (Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (SGIker Laser Facility, UPV/EHU, Leioa-Bizkaia) ; Moya, David (Cantabria Inst. of Phys.) ; Pinto, Rogelio Palomo (Pablo de Olavide U., Seville) ; Vila, Iván (Cantabria Inst. of Phys.)
For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. [...]
2017 - Published in : Nucl. Instrum. Methods Phys. Res., A 845 (2017) 69-71 Elsevier Open Access article: PDF;
In : 14th Vienna Conference on Instrumentation, Vienna, Austria, 15 - 19 Feb 2016, pp.69-71
Úplný záznam - Podobné záznamy
7.
Belle II Technical Design Report / Abe, T ; Adachi, I ; Adamczyk, K ; Ahn, S ; Aihara, H ; Akai, K ; Aloi, M ; Andricek, L ; Aoki, K ; Arai, Y et al.
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. [...]
arXiv:1011.0352 ; KEK REPORT 2010-1. - 2010.
Preprint
Úplný záznam - Podobné záznamy
8.

CMS-PHO-OREACH-2005-008
© 2005 CERN, for the benefit of the CMS Collaboration 		Arrival at CERN of the first MB4 DT chambers from Turin
The largest DT chambers to be installed into the o [...]
16 Feb 2005
Úplný záznam - Podobné záznamy

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