| Article | |
| Title | Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system |
| Author(s) | Pape, S (CERN ; Dortmund U.) ; García, M Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Montero, R (Basque U., Bilbao) ; Palomo, F R (Seville U.) ; Vila, I (Cantabria Inst. of Phys.) ; Wiehe, M (CERN ; Freiburg U.) |
| Publication | 2022 |
| Number of pages | 6 |
| In: | JINST 17 (2022) C08011 |
| In: | 12th International Conference on Positional Sensitive Detectors, Online, Online, 12 - 17 Sep 2021, pp.C08011 |
| DOI | 10.1088/1748-0221/17/08/C08011 |
| Subject category | Detectors and Experimental Techniques |
| Abstract | A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. A charge collection versus depth profile of the non-irradiated PIN diode is presented, where reflection on the rear silicon-air interface was observed. It is found that the time-over-threshold versus depth profile is particularly suitable to determine the boundaries of the DUT’s active volume. A depth scan of the irradiated PIN diode is discussed and a method to omit the single photon absorption background is presented. Finally, a charge collection measurement in the inter-pad region of the 5 × 5-multipad HPK LGAD is presented and it is demonstrated that TPA-TCT can be used to image the implantation and the electric field of segmented silicon devices in a three dimensional manner. |
| Copyright/License | © 2022-2025 The Author(s) (License: CC-BY-4.0) |
Corresponding record in: Inspire
Záznam vytvorený 2022-08-25, zmenený 2022-08-25
