CERN Accelerating science

CERN Document Server 4 records found  Search took 0.53 seconds. 
1.
Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors / Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.- 2022-12-22 - Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977 Fulltext: PDF;
2.
TCAD Device Simulations of Irradiated Silicon Detectors / Palomo Pinto, Francisco Rogelio (Seville U.) ; Moll, Michael (CERN) ; Schwandt, Jörn (Hamburg U.) ; Villani, E Giulio (Rutherford) ; Gurimskaya, Yana (CERN) ; Millán, Rafael (Seville U.)
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. [...]
SISSA, 2020 - 12 p. - Published in : PoS Vertex2019 (2020) 051 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.051
3.
Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons / Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
4.
Radiation damage in p-type EPI silicon pad diodes irradiated with different particle types and fluences / Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Dias De Almeida, Pedro (University of Cantabria) ; Fernandez Garcia, Marcos (University of Cantabria)
AIDA-2020-POSTER-2019-005.- Geneva : CERN, 2019 Fulltext: PDF;

See also: similar author names
2 Gurimskaya, Y
6 Gurimskaya, Y.
Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.
Haven't found what you were looking for? Try your search on other servers:
Gurimskaya, Yana in Amazon
Gurimskaya, Yana in CERN EDMS
Gurimskaya, Yana in CERN Intranet
Gurimskaya, Yana in CiteSeer
Gurimskaya, Yana in Google Books
Gurimskaya, Yana in Google Scholar
Gurimskaya, Yana in Google Web
Gurimskaya, Yana in IEC
Gurimskaya, Yana in IHS
Gurimskaya, Yana in INSPIRE
Gurimskaya, Yana in ISO
Gurimskaya, Yana in KISS Books/Journals
Gurimskaya, Yana in KISS Preprints
Gurimskaya, Yana in NEBIS
Gurimskaya, Yana in SLAC Library Catalog
Gurimskaya, Yana in Scirus