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Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
/ Terzo, Stefano (Barcelona, IFAE) ; Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Di Bello, Francesco (Geneva U.) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Períc, Ivan (KIT, Karlsruhe) ; Puigdengoles, Carles (Barcelona, IFAE) ; Ristic, Branislav (Geneva U. ; CERN) ; Pinto, Mateus Vicente Barrero (Geneva U.) et al.
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. [...]
arXiv:1705.05146.-
2017-06-13 - 7 p.
- Published in : JINST 12 (2017) C06009
Fulltext: arXiv:1705.05146_2 - PDF; arXiv:1705.05146 - PDF;
In : Instrumentation for Colliding Beam Physics, Novosibirsk, Russia, 27 Feb - 3 Mar 2017, pp.C06009
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
/ Terzo, S. (Barcelona, IFAE) ; Benoit, M. (Geneva U.) ; Cavallaro, E. (Barcelona, IFAE) ; Casanova, R. (Barcelona, IFAE) ; Di Bello, F.A. (Geneva U.) ; Förster, F. (Barcelona, IFAE) ; Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; Iacobucci, G. (Geneva U.) ; Perić, I. (KIT, Karlsruhe) ; Puigdengoles, C. (Barcelona, IFAE) et al.
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. [...]
arXiv:1811.07817.-
2019-02-13 - 21 p.
- Published in : JINST 14 (2019) P02016
Fulltext: PDF;
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Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
/ Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Lange, Jörn (Barcelona, IFAE) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Mandić, Igor (Stefan Inst., Ljubljana) ; Puigdengoles, Carles (Barcelona, IFAE) ; Terzo, Stefano (Barcelona, IFAE)
Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). [...]
arXiv:1611.04970.-
2017-01-25 - 11 p.
- Published in : JINST 12 (2017) C01074
Fulltext: PDF; Preprint: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C01074
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Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates
/ Terzo, Stefano (Barcelona, IFAE) ; Benoit, Mathieu (CERN) ; Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Foerster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE) ; Iacobucci, Giuseppe (Barcelona, IFAE) ; Peric, Ivan (KIT, Karlsruhe) ; Puigdengoles, Carles (Barcelona, IFAE) ; Vilella, Eva (Liverpool U.)
High Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications.With respect to hybrid pixel detectors the monolithic approach offers the main advantages of reduced material budget and production costs due to the absence of the bump bonding process. This aspect is important especially when large areas need to be covered as in the tracking detectors of the LHC experiments. [...]
SISSA, 2019 - 5 p.
- Published in : PoS TWEPP2018 (2019) 125
In : Topical Workshop on Electronics for Particle Physics, Antwerp, Belgique, 17 - 21 Sep 2018, pp.125
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Design and characterization of the monolithic matrices of the H35DEMO chip
/ Casanova Mohr, R. (IFAE) ; Cavallaro, E. (IFAE) ; Föster, F. (ICREA, IFAE) ; Grinstein, S. (ICREA, IFAE) ; Peric, I. (KIT) ; Puigdengoles, C. (IFAE) ; Terzo, S. (IFAE) ; Vilella, E. (UNILIV)
The H35DEMO chip is a HV/HR-MAPS demonstrator of 18.49 mm x 24.4 mm, fabricated with a 0.35 µm HVCMOS process from AMS in four different substrate resistivities. The chip is divided into four independent matrices with a pixel size of 50 µm x 250 µm. [...]
AIDA-2020-CONF-2019-001.-
Geneva : CERN, 2019
- Published in :
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017
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6.
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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
/ Kiehn, Moritz (Geneva U.) ; Di Bello, Francesco Armando (Geneva U.) ; Benoit, Mathieu (Geneva U.) ; Casanova Mohr, Raimon (Barcelona, IFAE) ; Chen, Hucheng (Brookhaven Natl. Lab.) ; Chen, Kai (Brookhaven Natl. Lab.) ; D.M.S., Sultan (Geneva U.) ; Ehrler, Felix (Geneva U. ; KIT, Karlsruhe, IPE) ; Ferrere, Didier (Geneva U.) ; Frizell, Dylan (U. Oklahoma, Norman) et al.
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. [...]
arXiv:1807.05953.-
2019-04-21 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 104-107
Fulltext: PDF; Preprint (v.3, 8 June 2020): PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.104-107
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Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade
/ Vilella, E (Liverpool U.) ; Benoit, M (Geneva U.) ; Casanova, R (Barcelona, IFAE) ; Casse, G (Liverpool U.) ; Ferrere, D (Geneva U.) ; Iacobucci, G (Geneva U.) ; Peric, I (Barcelona, IFAE) ; Vossebeld, J (Liverpool U.)
HV-CMOS sensors can offer important advantages in terms of material budget, granularity and cost for large area tracking systems in high energy physics experiments. This article presents the design and simulated results of an HV-CMOS pixel demonstrator for the High Luminosity-LHC. [...]
2016
- Published in : JINST 11 (2016) C01012
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C01012
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Novel silicon detector technologies for the HL-LHC ATLAS upgrade
/ Cavallaro, Emanuele
The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN), Geneva, will interrupt its operation in 2023 to be upgraded to high luminosity (HL-LHC) and provide proton-proton collisions with a center of mass energy of ${\sqrt{s} = 14 \, \mathrm{TeV}}$ at a luminosity of [...]
CERN-THESIS-2018-280
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Fulltext
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10.
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3D silicon pixel detectors for the High-Luminosity LHC
/ Lange, J. (Barcelona, IFAE) ; Carulla Areste, M. (Barcelona, Inst. Microelectron.) ; Cavallaro, E. (Barcelona, IFAE) ; Förster, F. (Barcelona, IFAE) ; Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; López Paz, I. (Barcelona, IFAE) ; Manna, M. (Barcelona, IFAE) ; Pellegrini, G. (Barcelona, Inst. Microelectron.) ; Quirion, D. (Barcelona, Inst. Microelectron.) ; Terzo, S. (Barcelona, IFAE) et al.
3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. [...]
arXiv:1610.07480.-
2016-11-21 - 9 p.
- Published in : JINST 11 (2016) C11024
Fulltext: PDF; Preprint: PDF; External link: Preprint
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C11024
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