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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
/ Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO$_{2}$) to 1 Grad(SiO$_{2}$). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
/ Pezzotta, A (Milan Bicocca U. ; Ecole Polytechnique, Lausanne ; INFN, Milan Bicocca) ; Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (Padua U.) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for the future silicon-based detectors. [...]
2016 - 4 p.
- Published in : 10.1109/ESSDERC.2016.7599608
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Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors
/ Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580
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Measurements of total ionizing dose effects in TPSCo 65 nm and influence of NMOS bulk bias
/ Dorda Martin, A (CERN ; KIT, Karlsruhe, IKP) ; Ballabriga, R (CERN) ; Borghello, G (CERN) ; Campbell, M (CERN) ; Deng, W (CERN ; CCNU, Wuhan, Inst. Part. Phys.) ; Hong, G H (CERN ; Yonsei U.) ; Kremastiotis, I (CERN) ; Snoeys, W (CERN) ; Termo, G (EPFL-ISIC, Lausanne)
The CERN EP R&D; WP 1.2 aims to develop state-of-art monolithic pixel detectors using modern CMOS processes. The TPSCo 65 nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C02036
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02036
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Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
/ Mattiazzo, S (Padua U.) ; Bagatin, M (Padua U.) ; Bisello, D (Padua U. ; INFN, Padua) ; Gerardin, S (Padua U. ; INFN, Padua) ; Marchioro, A (CERN) ; Paccagnella, A (Padua U. ; INFN, Padua) ; Pantano, D (Padua U. ; INFN, Padua) ; Pezzotta, A (Milan Bicocca U. ; INFN, Milan Bicocca ; Ecole Polytechnique, Lausanne) ; Zhang, C M (Ecole Polytechnique, Lausanne) ; Baschirotto, A (Milan Bicocca U. ; INFN, Milan Bicocca)
This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. [...]
2017 - 10 p.
- Published in : JINST 12 (2017) C02003
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C02003
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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. [...]
2017 - 4 p.
- Published in : 10.1109/NSSMIC.2016.8069869
In : IEEE Nuclear Science Symposium and Medical Imaging Conference, Strasbourg, France, 29 Oct - 6 Nov 2016, pp.8069869
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