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A new concept of monolithic silicon pixel detectors : Hydrogenated amorphous silicon on ASIC
/ Anelli, G ; Commichau, S C ; Despeisse, M ; Dissertori, G ; Jarron, P ; Miazza, C ; Moraes, D ; Shah, A ; Viertel, Gert M ; Wyrsch, N
A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . [...]
2004
- Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 366-372
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Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application
/ Despeisse, M (CERN) ; Anelli, G (CERN) ; Commichau, S C (Zurich, ETH) ; Dissertori, G (Zurich, ETH) ; Garrigos, A (CERN) ; Jarron, P (CERN) ; Miazza, C (Neuchatel U.) ; Moraes, D (CERN) ; Shah, A (Neuchatel U.) ; Wyrsch, N (Neuchatel U.) et al.
We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. [...]
2004
- Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 357-361
In : 9th Pisa Meeting on Advanced Detectors, La Biodola, Italy, 25 - 31 May 2003, pp.357-361 (v.518)
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3.
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A novel low noise hydrogenated amorphous silicon pixel detector
/ Moraes, D ; Anelli, G ; Despeisse, M ; Dissertori, G ; Garrigos, A ; Jarron, P ; Kaplon, J ; Miazza, C ; Shah, A ; Viertel, Gert M et al.
Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 mum pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. [...]
2004
- Published in : J. Non-Cryst. Solids 338-340 (2004) 729-731
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4.
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Low noise, low power front end electronics for pixelized TFA sensors
/ Poltorak, K (CERN) ; Ballif, C (EPFL, Lausanne) ; Dabrowski, W (AGH-UST, Cracow) ; Despeisse, M (EPFL, Lausanne) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Wyrschb, N (EPFL, Lausanne)
Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on top of the readout ASIC, TFA shows the similarity to MAP imagers, allowing, however, more sophisticated front–end circuitry to extract the signals, like in case of Hybrid Pixel technology. [...]
CERN, 2009
Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.72-78 (CERN-2009-006)
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5.
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Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection
/ Despeisse, M (CERN) ; Anelli, G (CERN) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Moraes, D (CERN) ; Nardulli, A (Zurich, ETH) ; Powolny, F (CERN) ; Wyrsch, N (Neuchatel U.)
Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. [...]
2008
- Published in : IEEE Trans. Nucl. Sci. 55 (2008) 802-811
IEEE Published version, local copy: PDF;
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6.
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Hydrogenated amorphous silicon sensors based on thin film on ASIC technology
/ Despeisse, M (CERN) ; Moraes, D ; Anelli, G ; Jarron, P ; Kaplon, J ; Rusack, R ; Saramad, S ; Wyrsch, N
The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. [...]
2006
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1389-1394
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10.
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Stability of deuterated amorphous silicon solar cells
/ Munyeme, G ; Wells, J P R ; Van der Meer, L F G ; Dijkhuis, J I ; Van der Weg, W F ; Schropp, R
In order to elucidate the microscopic mechanism for the earlier observed enhanced stability of deuterated amorphous silicon solar cells we conducted a side by-side study of fully deuterated intrinsic layers on crystalline silicon substrates using the free-electron laser facility at Nieuwegein (FELIX) to resonantly excite the Si-D stretching vibration and measure the various relaxation channels available to these modes, and of p-i-n solar cells with identical intrinsic absorber layers on glass/TCO substrates to record the degradation and stabilization of solar cell parameters under prolonged light soaking treatments. From our comparative study it is shown that a-Si:D has a superior resistance against light-induced defect creation as compared to a-Si:H and that this can now be explained in the light of the 'H collision model' since the initial step in the process, the release of H, is more likely than that of D. [...]
2004
- Published in : J. Non-Cryst. Solids 338-340 (2004) 291-294
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