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CERN Document Server 2,018 ჩანაწერია ნაპოვნი  1 - 10შემდეგიდასასრული  ჩანაწერთან გადასვლა: ძიებას დასჭირდა 0.39 წამი. 
1.
(100)
Muon motion in pure and weakly doped aluminium / Niinikoski, T O ; Hartmann, O ; Karlsson, E ; Kehr, K W ; Norlin, L O ; Richter, D ; Welter, J M
The authors have studied the diffusion and localization of positive muons in pure and weakly doped aluminium, in the temperature range 30 mK-100K, by measuring the damping parameter of the muon spin rotation ( mu SR) signal. In this paper they discuss some of their recent results and draw the following conclusions: i) in pure Al, positive muons are delocalized in band states (coherent motion); ii) in Al doped with 5-70 ppm Mn, the temperature, concentration and field dependences of the damping parameter suggest diffusion or capture limited trapping to octahedral interstitial sites in the aluminium lattice below 1K; iii) above 2K a two-state diffusion-trapping model explains well the peak in the damping parameter, which appears at 15-50K for the dopants Mn, Mg, Li and Ag so far studied. [...]
1981 - Published in : Physica B 108+ (1981) 879-82
In : 16th International Conference on Low-temperature Physics pts.1-3, Los Angeles, CA, USA, 19 - 25 Aug 1981, pp.879-82
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
2.
(91)
Muon diffusion in niobium in the presence of traps / Niinikoski, T O (CERN) ; Borghini, M (CERN) ; Hartmann, O (Inst. Phys., Uppsala) ; Karlsson, E (Inst. Phys., Uppsala) ; Kehr, K W (Jülich) ; Norlin, L O (Inst. Phys., Uppsala) ; Pernestål, K (Inst. Phys., Uppsala) ; Richter, D (Jülich) ; Soulié, L O (CERN) ; Walker, E (Geneva U.)
The first CERN experiments on Nb metal showed a behaviour of muon depolarisation rate Lambda (T) similar to that in Cu, but with indications of some structure in the 'flat' low-T region. Later measurements on more purified samples, containing less than 100 ppm substitutional impurities and varying concentrations of interstitial nitrogen, showed a very strong dependence of the depolarization rate on the nitrogen content. [...]
1979 - 11 p. - Published in : Hyperfine Interact. 6 (1979) 229-32 Fulltext: PDF;
In : 1st International Topical Meeting on Muon Spin Rotation, Rorschach, Switzerland, 4 - 7 Sep 1978, pp.229-32
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
3.
(45)
Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types / Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; Amorim, LM (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. [...]
CERN-OPEN-2013-012.- Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 10 p. - Published in : Phys. Rev. B 86 (2012) 125206 Article: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
4.
(37)
Measurement of trapping time constants in irradiated DOFZ silicon with test beam data / Lari, T (INFN, Milan)
A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS pixel detectors irradiated with protons to a fluence of 1.1 * 10/sup 15/ n/sub eq/ cm/sup -2/. [...]
2004 - Published in : Nucl. Instrum. Methods Phys. Res., A 518 (2004) 349-351
In : 9th Pisa Meeting on Advanced Detectors, La Biodola, Italy, 25 - 31 May 2003, pp.349-351 (v.518)
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
5.
(35)
Low temperature diffusion and trapping of muons in aluminium : new experiments and comparison with theory / Hartmann, O ; Karlsson, E B ; Wäckelgard, E ; Wäppling, R ; Richter, D ; Hempelmann, R ; Niinikoski, T O
1986
In : 4th International Conference on Muon Spin Rotation, Relaxation and Resonance pt.1, Uppsala, Sweden, 23 - 27 Jun 1986, pp.223-228
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
6.
(34)
Precise lattice location of substitutional and interstitial Mg in AlN / Amorim, Lígia Marina (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Silva, Daniel José (Porto U.) ; Silva, Manuel Ribeiro da (Lisbon U., CFAUL) ; Gottberg, Alexander (CERN) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
The lattice site location of radioactive $^{27}$Mg implanted in AlN was determined by means of emission channeling. The majority of the $^{27}$Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. [...]
CERN-OPEN-2014-013.- Leuven : KU Leuven, 2013 - 5 p. - Published in : Appl. Phys. Lett. 103 (2013) 262102 Preprint: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
7.
(34)
Muon diffusion in niobium in the presence of traps / Borghini, M ; Hartmann, O ; Karlsson, E ; Kehr, K W ; Niinikoski, T O ; Norlin, L O ; Pernestal, K ; Richter, D ; Soulié, J C ; Walker, E
Investigates muon diffusion in niobium with controlled amounts of interstitial impurities. The polarization decay was interpreted in terms of a two-state model where the muon is alternatively in a state of free diffusion or in traps. [...]
1978 - Published in : Phys. Rev. Lett. 40 (1978) 1723-6 APS Published version, local copy: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
8.
(34)
Lattice location of impurities in silicon Carbide / Granadeiro Costa, Angelo Rafael
The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor [...]
CERN-THESIS-2018-072 - 157 p.

Fulltext
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
9.
(30)
Structure and magnetism of transition-metal implanted dilute magnetic semiconductors / Pereira, Lino
The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics [...]
CERN-THESIS-2011-309 - 296 p.

Fulltext
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
10.
(27)
 Impurity Trapping of Positive Muons in Metals - MUSR.
Approved: 22 September 1977.-
Status: Finished
Experiment: SC76
დეტალური ჩანაწერი - მსგავსი ჩანაწერები

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