1.
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A charge collection study with dedicated RD50 charge multiplication sensors
/ Betancourt, C (Freiburg U.) ; Barber, T (Freiburg U.) ; Hauser, M (Freiburg U.) ; Jakobs, K (Freiburg U.) ; Kuehn, S (Freiburg U.) ; Parzefall, U (Freiburg U.) ; Wonsak, S (Freiburg U. ; Liverpool U.)
This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co., Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. [...]
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 62-65
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.62-65
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2.
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A charge collection study with dedicated RD50 charge multiplication sensors
/ Betancourt, C (Freiburg U.) ; Barber, T (Freiburg U.) ; Hauser, M (Freiburg U.) ; Jakobs, K (Freiburg U.) ; Kuehn, S (Freiburg U.) ; ParzefaIl, U (Freiburg U.) ; Wonsak, S (Freiburg U.)
We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to fluences of $1 \times 10^{15}$ and $5 \times 10^{15} \ 1 \ \rm{MeV} \ n_{eq}/cm^2$. [...]
2012 - 4 p.
- Published in : 10.1109/NSSMIC.2012.6551393
In : 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference, Anaheim, California, USA, 29 Oct - 3 Nov 2012, pp.1657-1660
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3.
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Silicon microstrip detectors in 3D technology for the sLHC
/ Parzefall, U (Freiburg U.) ; Dalla Betta, G F (Trento U. ; INFN, Trento) ; Eckert, S (Freiburg U.) ; Eklund, L (Glasgow U.) ; Fleta, C (Glasgow U.) ; Jakobs, K (Freiburg U.) ; Kühn, S (Freiburg U.) ; Pahn, G (Freiburg U.) ; Parkes, C (Glasgow U.) ; Pennicard, D (Glasgow U.) et al.
The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. [...]
2009 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 607 (2009) 17-20
In : 10th International Workshop on Radiation Imaging Detectors, Helsinki, Finland, 29 Jun - 3 Jul 2008, pp.17-20
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4.
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3D silicon strip detectors
/ Parzefall, U (Freiburg U.) ; Bates, R (Glasgow U.) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Dalla Betta, G F (Trento U. ; INFN, Trento) ; Eckert, S (Freiburg U.) ; Eklund, L (Glasgow U.) ; Fleta, C (Glasgow U.) ; Jakobs, K (Freiburg U.) ; Kühn, S (Freiburg U.) ; Lozano, M (Barcelona, Inst. Microelectron.) et al.
While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. [...]
2009 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 604 (2009) 234-237
In : 8th International Conference on Position Sensitive Detectors, Glasgow, UK, 01 - 05 Sep 2008, pp.234-237
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5.
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Measurements and simulations of charge collection efficiency of p$^+$/n junction SiC detectors
/ Moscatelli, F (IMM, Bologna ; U. Perugia (main) ; INFN, Perugia) ; Scorzoni, A (U. Perugia (main) ; INFN, Perugia ; IMM, Bologna) ; Poggi, A (Perugia U.) ; Bruzzi, M (Florence U.) ; Lagomarsino, S (Florence U.) ; Mersi, S (Florence U.) ; Sciortino, Silvio (Florence U.) ; Nipoti, R (IMM, Bologna)
Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p$^+$/n SiC diodes realised on a medium-doped ($1 \times 10^{15} \rm{cm}^{−3}$), 40 $\mu \rm{m}$ thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under $\beta$ particle radiation from a $^{90}$Sr source are presented. [...]
2005 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 218-221
In : 6th International Workshop on Radiation Imaging Detectors, Glasgow, UK, 25-29 Jul 2004, pp.218-221
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6.
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Diamond as a Particle Detector
/ Meier, D (CERN)
/RD42
This report surveys the detector properties of CVD-diamond samples and CVD-diamond strip detectors with respect to charge collection, spatial resolution and radiation damage. The collected charge on diamond samples and strip detectors to date is at detectors with 4000 electrons. [...]
1996 - 6 p.
- Published in : Italian Phys. Soc. Proc.: 52 (1996) , pp. 105
Fulltext: PDF; External link: Fulltext
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CCE measurements on heavily irradiated micro-strip sensors
/ Bernardini, J (Pisa, Scuola Normale Superiore ; INFN, Pisa) ; Borrello, L (Pisa, Scuola Normale Superiore ; INFN, Pisa) ; Fiori, F (Pisa U. ; INFN, Pisa) ; Messineo, A (Pisa U. ; INFN, Pisa)
The paper describes a study of the radiation hardness of micro-strip devices, processed on different silicon substrates, designed to explore the feasibility of a tracker system for the experiments upgrade at the Super-LHC (S-LHC) collider. The radiation tolerance of the devices has been established comparing the Charge Collection Efficiency (CCE) measured on irradiated and not irradiated sensors of the same type. [...]
2009 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 612 (2010) 478-481
In : 7th International Conference on Radiation Effects on Semiconductor materials, Detectors and Devices, Florence, Italy, 10 - 13 Oct 2008, pp.478-481
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10.
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Investigation of electric field and charge multiplication in silicon detectors by Edge-TCT
/ Kramberger, G (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana) ; Milovanović, M (Stefan Inst., Ljubljana)
A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 $\mu \rm{m}$ was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. [...]
2009 - 9 p.
- Published in : 10.1109/NSSMIC.2009.5402213
In : IEEE Nuclear Science Symposium And Medical Imaging Conference, Orlando, FL, USA, 25 Oct - 31 Oct 2009, pp.1740-1748
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