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On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process
/ García, M Fern (Cantabria Inst. of Phys.) ; Sánchez, J Gonz (Cantabria Inst. of Phys.) ; Jaramillo Echeverría, R (Cantabria Inst. of Phys.) ; Moll, M (CERN ; Gottingen U.) ; Montero, R (Basque U., Bilbao) ; Moya, D (Cantabria Inst. of Phys.) ; Pinto, R Palomo (Seville U.) ; Vila, I (Cantabria Inst. of Phys.)
We introduce a new method based on the transient-current technique (TCT) for the radiation tolerance assessment of an n-in-p junction with a deep n-well on a relatively low-resistivity p-type substrate commonly used for HV-CMOS pixel sensors. The transient-current method here employed uses a femtosecond laser to generate excess carriers via a two-photon-absorption (TPA) process. [...]
2017 - 12 p.
- Published in : JINST 12 (2017) C01038
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C01038
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2.
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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
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3.
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Charge collection in irradiated HV-CMOS detectors
/ Hiti, B (Stefan Inst., Ljubljana) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) et al.
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . [...]
Elsevier, 2019 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 214-218
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.214-218
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6.
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Charge collection studies in irradiated HV-CMOS particle detectors
/ Affolder, A (Liverpool U.) ; Andelković, M (Nis U.) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Caragiulo, P (SLAC) ; Cindro, V (Stefan Inst., Ljubljana) ; Das, D (Rutherford) et al.
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. [...]
IOP, 2016 - 18 p.
- Published in : JINST 11 (2016) P04007
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High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)
/ García, Marcos Fernández (Cantabria Inst. of Phys.) ; Sánchez, Javier González (Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (SGIker Laser Facility, UPV/EHU, Leioa-Bizkaia) ; Moya, David (Cantabria Inst. of Phys.) ; Pinto, Rogelio Palomo (Pablo de Olavide U., Seville) ; Vila, Iván (Cantabria Inst. of Phys.)
For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. [...]
2017
- Published in : Nucl. Instrum. Methods Phys. Res., A 845 (2017) 69-71
Elsevier Open Access article: PDF;
In : 14th Vienna Conference on Instrumentation, Vienna, Austria, 15 - 19 Feb 2016, pp.69-71
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Charge collection properties of irradiated depleted CMOS pixel test structures
/ Mandić, I. (Stefan Inst., Ljubljana ; Bonn U.) ; Cindro, V. (Stefan Inst., Ljubljana) ; Gorišek, A. (Stefan Inst., Ljubljana) ; Hiti, B. (Stefan Inst., Ljubljana) ; Kramberger, G. (Stefan Inst., Ljubljana) ; Zavrtanik, M. (Stefan Inst., Ljubljana) ; Mikuž, M. (Stefan Inst., Ljubljana ; Ljubljana U.) ; Hemperek, T. (Bonn U.)
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. [...]
arXiv:1801.03671.-
2018-09-21 - 8 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 903 (2018) 126-133
Fulltext: PDF;
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10.
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High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique
/ García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (U. Basque Country, Leioa) ; Palomo Pinto, Rogelio (Seville U.) ; Vila, Iván (Cantabria Inst. of Phys.) ; Wiehe, Moritz (CERN)
The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162865
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162865
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