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CERN Document Server 2,048 notices trouvées  1 - 10suivantfin  aller vers la notice: La recherche a duré 0.39 secondes. 
1.
(100)
Slow Extraction of Charged Ion Pulses from the REXEBIS / Bidault, Niels (CERN) ; Rodriguez, Jose Alberto (CERN) ; Lozano, Miguel (CERN) ; Sadovich, Sergey (CERN)
The Isotope mass Separator On-Line DEvice (ISOLDE) facility located at CERN, produces and transports Radioactive Ion Beams (RIBs) at low or high energy through the REX/HIE-ISOLDE linear accelerator, for nuclear physics, astrophysics, solid-state physics and applied-physics purposes. Increasing the charge state of the ions is a prerequisite for efficient acceleration and is accomplished by an Electron Beam Ion Source (REXEBIS). [...]
arXiv:1808.02713.- 2018-09-21 - Published in : AIP Conf. Proc. 2011 (2018) 070009 Fulltext: PDF;
In : International Conference on Ion Sources, CERN Geneva, Geneva, Switzerland, 15 - 20 Oct 2017, pp.070009
Notice détaillée - Notices similaires
2.
(91)
Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser / Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.- 2024-04-24 - 11 p. - Published in : JINST 19 (2024) P04029 Fulltext: 2401.01229 - PDF; Publication - PDF;
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3.
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Residual Gas Ions Characterization from the REXEBIS / Bidault, Niels (CERN) ; Lozano, Miguel (CERN) ; Rodriguez, Jose (CERN)
The Isotope mass Separator On-Line DEvice (ISOLDE) is a user facility located at CERN where Radioactive Ion Beams (RIBs) are produced from proton collisions onto a target, mass separated and transported to user experimental stations either directly at low energy or after being post- accelerated, notably for nuclear physics studies. Prior to acceleration through the REX/HIE-ISOLDE linear acceler- ator, the ion beam is accumulated, bunched and cooled in a Penning trap (REXTRAP) and afterwards charge-bred in an Electron Beam Ion Source (REXEBIS). [...]
2018 - 3 p. - Published in : 10.18429/JACoW-IPAC2018-TUPAF041 Fulltext: PDF;
In : 9th International Particle Accelerator Conference, Vancouver, Canada, 29 Apr - 4 May 2018, pp.TUPAF041
Notice détaillée - Notices similaires
4.
(87)
High-Power Ferro-Electric Fast Reactive Tuner / Ben-Zvi, Ilan (CERN ; Brookhaven Natl. Lab.) ; Castilla, Alejandro (Lancaster U. (main) ; CERN) ; Macpherson, Alick (CERN) ; Shipman, Nicholas (CERN)
We present a novel design of a FerroElectric Fast Reactive Tuner (FE-FRT) capable of modulating Mega VAR reactive power on a sub-microsecond time scale. [...]
arXiv:2109.06806. - 9 p.
Fulltext
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5.
(85)
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype / Iacobucci, G. (Geneva U.) ; Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Saidi, J. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) et al.
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. [...]
arXiv:2208.11019.- 2022-10-25 - 22 p. - Published in : JINST 17 (2022) P10040 Fulltext: document - PDF; 2208.11019 - PDF;
Notice détaillée - Notices similaires
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20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer / Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.- 2023-03-28 - 16 p. - Published in : JINST Fulltext: 2301.12244 - PDF; Publication - PDF;
Notice détaillée - Notices similaires
7.
(82)
MIRACLS- the Multi Ion Reflection Apparatus for Collinear Laser Spectroscopy of radionuclides / Malbrunot-Ettenauer, S (Experimental Physics Department, CERN, CH-1211 Geneva 23, Switzerland)
CERN-INTC-2020-015 ; INTC-I-215. - 2020.
Fulltext - Original Document (INTC-M-019)
Notice détaillée - Notices similaires
8.
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology / Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.- 2022-02-10 - 17 p. - Published in : JINST 17 (2022) P02019 Fulltext: 2112.08999 - PDF; document - PDF;
Notice détaillée - Notices similaires
9.
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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer / Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606. - 18.
Fulltext
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(80)
Laser spectroscopy of cadmium isotopes towards N=50 / Yordanov, DT (CERN, CH-1211 Geneva 23, Switzerland)
CERN-INTC-2012-023 ; INTC-P-271-ADD-1. - 2012.
Fulltext - Original Document (INTC-P-271)
Notice détaillée - Notices similaires

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