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3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production
/ Da Via, Cinzia (Manchester U.) ; Boscardil, Maurizio (Fond. Bruno Kessler, Povo) ; Dalla Betta, GianFranco (INFN, Trento ; Trento U.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Giacomini, Gabriele (Fond. Bruno Kessler, Povo) ; Hansen, Thor-Erik (SINTEF, Oslo) ; Hasi, Jasmine (SLAC) ; Kok, Angela (SINTEF, Oslo) ; Micelli, Andrea (INFN, Udine ; Udine U.) ; Povoli, Marco (INFN, Trento ; Trento U.) et al.
3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. [...]
SLAC-REPRINT-2013-039.-
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 699 (2013) 18-21
In : The 8th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Taipei, Taiwan, 5 - 8 Dec 2011, pp.18-21
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3.
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3D silicon pixel sensors: Recent test beam results
/ Hansson, P (SLAC) ; Gjersdal, H (Oslo U.) ; Sandaker, H (Bergen U.) ; Korolkov, I (Barcelona, IFAE) ; Barrera, C (Barcelona, Inst. Microelectron.) ; Wermes, N (Bonn U.) ; Borri, M (Turin U.) ; Grinstein, S (Barcelona, IFAE) ; Troyano, I (Barcelona, IFAE) ; Grenier, P (SLAC) et al.
The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 628 (2011) 216-220
In : 12th Vienna Conference on Instrumentation, Vienna, Austria, 15 - 20 Feb 2010, pp.216-220
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3D Pixels: Recent results
/ Rohne, O (Oslo U.) ; Bolle, E (Oslo U.) ; Borri, M (Turin U.) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Dalla Betta, G F (Trento U. ; INFN, Trento) ; Darbo, G (INFN, Genoa) ; Da Via, C (Manchester U.) ; Dorholt, O (Oslo U.) ; Fazio, S (Calabria U.) ; Gemme, C (INFN, Genoa) et al.
2009 - 9 p.
- Published in : PoS VERTEX2009 (2009) 016
External link: Published version from PoS
In : 18th International Workshop on Vertex Detectors and related techniques, Veluwe, Netherlands, 13 - 18 Sep 2009, pp.016
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3D silicon sensors: irradiation results
/ Dalla Betta, G-F (U. Trento ; INFN, Padua) ; Povoli, M (U. Trento ; INFN, Padua) ; Da Via, C (U. Manchester) ; Grinstein, S (Barcelona, IFAE ; ICREA, Barcelona) ; Micelli, A (Barcelona, IFAE ; ICREA, Barcelona) ; Tsiskaridze, S (Barcelona, IFAE ; ICREA, Barcelona) ; Grenier, P (SLAC) ; Darbo, G (INFN, Genoa) ; Gemme, C (INFN, Genoa) ; Boscardin, M (Fond. Bruno Kessler, Trento) et al.
Owing to their unique architecture, that allows the inter-electrode distance to be decoupled from
the substrate thickness, 3D silicon sensors are intrinsically radiation hard devices. [...]
AIDA-CONF-2014-005.
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2014.
Full text
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Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade
/ La Rosa, Alessandro (CERN) ; Boscardin, M. (Fond. Bruno Kessler, Povo) ; Dalla Betta, G.-F. (Trento U. ; INFN, Trento) ; Darbo, G. (INFN, Genoa) ; Gemme, C. (INFN, Genoa) ; Pernegger, H. (CERN) ; Piemonte, C. (Fond. Bruno Kessler, Povo) ; Povoli, M. (Trento U. ; INFN, Trento) ; Ronchin, S. (Fond. Bruno Kessler, Povo) ; Zoboli, A. (Trento U. ; INFN, Trento) et al.
3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. [...]
arXiv:0910.3788; SLAC-PUB-14921.-
2009 - 8 p.
- Published in : PoS RD09 (2009) 032
Fulltext: arXiv:0910.3788 - PDF; RD09_032 - PDF; External links: Proceedings of Science Server; SLAC Document Server
In : 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 30 Sep - 2 Oct 2009, pp.032
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Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip
/ ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.-
2012 - 45 p.
- Published in : JINST 7 (2012) P11010
Fulltext: PDF; External link: Preprint
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Design, simulation, fabrication, and preliminary tests of 3D CMS pixel detectors for the super-LHC
/ Koybasi, Ozhan (Purdue U.) ; Bortoletto, Daniela (Purdue U. ; Purdue U.) ; Hansen, Thor-Erik (SINTEF, Oslo) ; Kok, Angela (SINTEF, Oslo) ; Hansen, Trond Andreas (SINTEF, Oslo) ; Lietaer, Nicolas (SINTEF, Oslo) ; Jensen, Geir Uri (SINTEF, Oslo) ; Summanwar, Anand (SINTEF, Oslo) ; Bolla, Gino (Purdue U.) ; Kwan, Simon Wing Lok (Fermilab)
2010
- Published in : IEEE Trans. Nucl. Sci. 57 (2010) 2897-2905
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3D Active Edge Silicon Detector Tests With 120 GeV Muons
/ Da Via, Cinzia (Manchester U.) ; Deile, Mario (CERN) ; Hasi, Jasmine (Manchester U.) ; Kenney, Christopher (Stanford U., Phys. Dept.) ; Kok, Angela (SINTEF, Oslo) ; Parker, Sherwood (LBL, Berkeley ; Hawaii U.) ; Watts, Stephen (Manchester U.) ; Anelli, Giovanni (CERN) ; Avati, Valentina (Helsinki Inst. of Phys. ; Helsinki U.) ; Bassetti, Valerio (Genoa U. ; INFN, Genoa) et al.
3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. [...]
2009
- Published in : IEEE Trans. Nucl. Sci. 56 (2009) 505-518
IEEE Published version, local copy: PDF;
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