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CERN Document Server 2,010 Datensätze gefunden  1 - 10nächsteEnde  gehen zum Datensatz: Die Suche hat 0.60 Sekunden gedauert. 
1.
(100)
Local Structure and Magnetism of (Ga,Mn)As / De Lemos Lima, Tiago Abel
Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics [...]
CERN-THESIS-2014-387 - 112 p.

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2.
(89)
Local structure of Mn-doped ferromagnetic semiconductors / De Lemos Lima, Tiago Abel
For decades, ferromagnetic semiconductors have captured the scientific community’s interest, harnessing in a single material the carrier’s charge as in a semiconductor and the spin as in a ferromagnet [...]
CERN-THESIS-2019-179 - 236 p.

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3.
(86)
Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As / IS580 Collaboration
In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achieved upon thermal annealing in a narrow temperature window around 200°C, by promoting the diffusion of interstitial Mn towards the surface. [...]
2019 - Published in : Physical Review B100 (2019) 144409 Reprint of published article: PDF;
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4.
(85)
Structure and magnetism of transition-metal implanted dilute magnetic semiconductors / Pereira, Lino
The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics [...]
CERN-THESIS-2011-309 - 296 p.

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5.
(73)
Lattice location of Mn in GaAs and GaN / De Coster, Arnaud
The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology [...]
CERN-THESIS-2015-253 -

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6.
(72)
Lattice location of Mn in GaAs and GaN / De Coster, Arnaud
The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology [...]
CERN-THESIS-2015-381 - 76 p.

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7.
(46)
Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors : Fe-doped Strontium Titanate and Zinc Oxide / Pereira, LMC
Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics [...]
CERN-THESIS-2007-144 - 89 p.

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8.
(45)
Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types / Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; Amorim, LM (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. [...]
CERN-OPEN-2013-012.- Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 10 p. - Published in : Phys. Rev. B 86 (2012) 125206 Article: PDF;
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9.
(41)
Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As / EC-SLI Collaboration
We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (TAs) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (TGa) is negligible. [...]
CERN-OPEN-2017-006.- Leuven, Belgium : Leuven U., 2015 - 5 p. - Published in : Appl. Phys. Lett. 106 (2015) 012406 Preprint: PDF;
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10.
(39)
Lattice location of transition metals in silicon by means of emission channeling / da Silva, Daniel José
The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades [...]
CERN-THESIS-2014-264 - 214 p.

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