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Characterisation of analogue MAPS produced in the 65 nm TPSCo process
/ ALICE Collaboration
Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). [...]
arXiv:2411.08740.-
2025-01-16 - 9 p.
- Published in : JINST
Fulltext: 2411.08740 - PDF; document - PDF;
In : 25th international Workshop on Radiation Imaging Detectors (iWoRiD2024), Lisbon, Portugal, 30 Jun - 4 Jul 2024, pp.C01019
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11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024) - PIXEL2024
18 - 22 Nov 2024
- Strasbourg, France
/ Arbor, N (ed.) (Université de Strasbourg); Andrea, J (ed.) (Université de Strasbourg); Besson, A (ed.) (Université de Strasbourg); Baudot, J (ed.) (Université de Strasbourg); Colledani, C (ed.) (Université de Strasbourg); Chabert, E (ed.) (Université de Strasbourg); El Bitar, Z (ed.) (Université de Strasbourg); Finck, C (ed.) (Université de Strasbourg); Hu-Guo, C (ed.) (Université de Strasbourg); Kachel, M (ed.) (Université de Strasbourg) et al.
2024
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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6.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
/ Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.
In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213
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Radiation tolerance of CVD diamond detectors for pions and protons
/ Adam, W (OAW, Vienna) ; Berdermann, E (Darmstadt, GSI) ; Bergonzo, P (Saclay) ; Bertuccio, G (Milan Polytechnic) ; Bogani, F (Florence U., LENS) ; Borchi, E (U. Florence (main)) ; Brambilla, A (Saclay) ; Bruzzi, M (U. Florence (main)) ; Colledani, C (Louis Pasteur U., Strasbourg I) ; Conway, J (Rutgers U., Piscataway (main)) et al.
/RD42
The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/ c pions and 24 GeV/ c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. [...]
2001 - 8 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 476 (2002) 686-693
In : 3rd International Conference on Radiation Effects on Semiconductor Material, Detectors and Devices, Florence, Italy, 28 - 30 Jun 2000, pp.686-693
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9.
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Parameterisation of radiation effects on CVD diamond for proton irradiation
/ Hartjes, F (Nikhef, Amsterdam) ; Adam, W (OAW, Vienna) ; Bauer, C (Heidelberg, Max Planck Inst.) ; Berdermann, E (Darmstadt, GSI) ; Bergonzo, P (Saclay) ; Bogani, F (Florence U., LENS) ; Borchi, E (U. Florence (main)) ; Brambilla, A (Saclay) ; Bruzzi, M (U. Florence (main)) ; Colledani, C (Louis Pasteur U., Strasbourg I) et al.
/RD42
The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to $5 \times 10^{15}$ protons/cm$^2$ . The results not only show radiation damage but also an annealing effect that is dominant at levels around %10^{15}$ protons/cm$^2$ . [...]
1999 - 8 p.
- Published in : Nucl. Phys. B, Proc. Suppl. 78 (1999) 675-682
In : 6th International Conference on Advanced Technology and Particle Physics : ICATPP-6, Como, Italy, 5 - 9 Oct 1998, pp.675-682
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10.
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New developments in CVD diamond for detector applications
/ Adam, W (OAW, Vienna) ; Berdermann, E (Darmstadt, GSI) ; Bergonzo, P (CEA-DTA-LETI, Grenoble) ; de Boer, W (Karlsruhe U.) ; Bogani, F (Florence U., LENS) ; Borchi, E (U. Florence (main)) ; Brambilla, A (CEA-DTA-LETI, Grenoble) ; Bruzzi, M (U. Florence (main)) ; Colledani, C (Louis Pasteur U., Strasbourg I) ; Conway, J (Rutgers U., Piscataway (main)) et al.
/RD42
Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. [...]
2004 - 3 p.
- Published in : Eur. Phys. J. C 33 (2004) S1014-S1016
In : EPS International Europhysics Conference on High-Energy Physics, Aachen, Germany, 17 - 23 Jul 2003, pp.S1014-S1016
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