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Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors / Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.- 2022-12-22 - Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977 Fulltext: PDF;

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TCAD Device Simulations of Irradiated Silicon Detectors / Palomo Pinto, Francisco Rogelio (Seville U.) ; Moll, Michael (CERN) ; Schwandt, Jörn (Hamburg U.) ; Villani, E Giulio (Rutherford) ; Gurimskaya, Yana (CERN) ; Millán, Rafael (Seville U.)
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. [...]
SISSA, 2020 - 12 p. - Published in : PoS Vertex2019 (2020) 051 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.051

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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons / Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221

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Radiation damage in p-type EPI silicon pad diodes irradiated with different particle types and fluences / Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Dias De Almeida, Pedro (University of Cantabria) ; Fernandez Garcia, Marcos (University of Cantabria)
AIDA-2020-POSTER-2019-005.- Geneva : CERN, 2019 Fulltext: PDF;

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Voir aussi: noms d'auteurs similaires
2	Gurimskaya, Y
6	Gurimskaya, Y.

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