CERN Accelerating science

CERN Document Server Намерени са 3 записа  Търсенето отне 0.60 секунди. 
1.
2023 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator / Ferraro, Rudy (CERN) ; Gkountoumis, Panagiotis (CERN) ; Foucard, Gilles (CERN) ; Ventura, Antonio (CERN) ; Scialdone, Antonio (CERN ; Montpellier U.) ; Zimmaro, Alessandro (CERN ; Montpellier U.) ; Glecer, Bruno (CERN) ; Koseoglou, Sokratis (CERN) ; Botias, Cai Arcos (CERN) ; Masi, Alessandro (CERN) et al.
The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices..
2023 - 8 p. - Published in : 10.1109/REDW61050.2023.10265814
In : 2023 IEEE Radiation Effects Data Workshop (REDW 2023): (in conjunction with 2023 NSREC), Kansas City, Missouri, United States, 24 - 28 Jul 2023
2.
SEE Testing on commercial power MOSFETs / Fernández-Martínez, Pablo (CERN) ; Papadopoulou, Athina (CERN) ; Danzeca, Salvatore (CERN) ; Foucard, Gilles (CERN) ; Alía, Rubén García (CERN) ; Kastriotou, Maria (CERN ; Rutherford) ; Cazzaniga, Carlo (Rutherford) ; Tsiligiannis, Giorgos (CERN) ; Gaillard, Remi (Unlisted, FR)
This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions..
2020 - 8 p. - Published in : 10.1109/RADECS50773.2020.9857706
In : 20th European Conference on Radiation and its Effects on Components and Systems (RADECS 2020), Online, France, 19 - 23 Jun 2020
3.
COTS Optocoupler Radiation Qualification Process for LHC Applications Based on Mixed-Field Irradiations / Ferraro, Rudy (CERN) ; Foucard, Gilles (CERN) ; Infantino, Angelo (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; García Alía, Rubén (CERN) ; Danzeca, Salvatore (CERN)
Optoelectronic components are the most sensitive devices of systems exposed to radiation environments. Displacement damage (DD) effects can severely degrade the performances of such devices, which are extensively used in critical electronic systems installed in particle accelerators or nuclear power plants. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1395-1403

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5 Foucard, G
1 Foucard, G.
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