Начало > SEE Testing on commercial power MOSFETs |
Article | |
Title | SEE Testing on commercial power MOSFETs |
Author(s) | Fernández-Martínez, Pablo (CERN) ; Papadopoulou, Athina (CERN) ; Danzeca, Salvatore (CERN) ; Foucard, Gilles (CERN) ; Alía, Rubén García (CERN) ; Kastriotou, Maria (CERN ; Rutherford) ; Cazzaniga, Carlo (Rutherford) ; Tsiligiannis, Giorgos (CERN) ; Gaillard, Remi (Unlisted, FR) |
Publication | 2020 |
Number of pages | 8 |
In: | 20th European Conference on Radiation and its Effects on Components and Systems (RADECS 2020), Online, France, 19 - 23 Jun 2020 |
DOI | 10.1109/RADECS50773.2020.9857706 |
Abstract | This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions. |
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