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Article
Title Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
Author(s)

Da Vià, C (Munich, Tech. U.) ; Bell, W.H. (Glasgow U.) ; Berglund, P. (Helsinki Inst. of Phys.) ; Borchi, E. (Florence U. ; INFN, Florence) ; Borer, K. (Bern U., LHEP) ; Bruzzi, Mara (INFN and Universita', Firenze, Italy) ; Buontempo, S. (Naples U. ; INFN, Naples) ; Casagrande, L. (LIP, Lisbon) ; Chapuy, S. (U. Geneva (main)) ; Cindro, V (Ljubljana U. ; Stefan Inst., Ljubljana) ; Dimcovski, Zlatomir (U. Geneva (main)) ; D'Ambrosio, N (Naples U. ; INFN, Naples) ; de Boer, Wim (Karlsruhe U., EKP) ; Dezillie, B. (Brookhaven Natl. Lab.) ; Esposito, A. (AIST, Tsukuba) ; Granata, V. (Naples U. ; INFN, Naples) ; Grigoriev, E. (Karlsruhe U., EKP) ; Heijne, E. (CERN) ; Heising, S. (Karlsruhe U., EKP) ; Janos, S. (Bern U., LHEP) ; Koivuniemi, J. (Helsinki Inst. of Phys.) ; Konorov, I. (Munich, Tech. U.) ; Li, Z. (Brookhaven Natl. Lab.) ; Lourenço, C. (LIP, Lisbon) ; Mikuz, M. (Stefan Inst., Ljubljana ; Ljubljana U.) ; Niinikoski, T. (CERN) ; Pagano, S. (INFN, Naples ; Naples U.) ; Palmieri, V. (Bern U., LHEP) ; Paul, S. (Munich, Tech. U.) ; Pirollo, S. (INFN, Florence ; Florence U.) ; Pretzl, K. (Bern U., LHEP) ; Ropotar, I. (CERN) ; Ruggiero, G (INFN, Naples ; Naples U.) ; Salmi, J. (VTT Electronics, Espoo) ; Seppä, H. (VTT Electronics, Espoo) ; Suni, I. (VTT Electronics, Espoo) ; Smith, K. (Glasgow U.) ; Sonderegger, P. (CERN) ; Valtonen, M. (Helsinki Inst. of Phys.) ; Zavrtanik, M. (Stefan Inst., Ljubljana ; Ljubljana U.)

Publication 1999
In: 45th IEEE Nuclear Science Symposium and Medical Imaging Conference, Toronto, Canada, 8 - 14 Nov 1998, pp.298-301
DOI 10.1109/NSSMIC.1998.775148
Subject category Detectors and Experimental Techniques
Accelerator/Facility, Experiment RD39
Abstract The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

Corresponding record in: Inspire


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