000409712 001__ 409712
000409712 003__ SzGeCERN
000409712 005__ 20180821011007.0
000409712 0248_ $$aoai:cds.cern.ch:409712$$pcerncds:CERN
000409712 0247_ $$2DOI$$a10.1109/NSSMIC.1998.775148
000409712 035__ $$9CERCER$$a0336792
000409712 035__ $$9INSPEC$$a6364971
000409712 035__ $$9CERN annual report$$a1999-3.0157
000409712 035__ $$9Inspire$$a1686887
000409712 041__ $$aeng
000409712 100__ $$aDa Vià, C$$uMunich, Tech. U.
000409712 245__ $$aCharge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
000409712 260__ $$c1999
000409712 520__ $$aThe charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).
000409712 595__ $$aSIS INSP99
000409712 595__ $$i6364971
000409712 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
000409712 690C_ $$aARTICLE
000409712 690C_ $$aCERN
000409712 693__ $$aNot applicable$$eRD39
000409712 694__ $$9INSPEC$$aA2940P (Semiconductor detectors)
000409712 694__ $$9INSPEC$$aB7420 (Particle and radiation detection and measurement)
000409712 694__ $$9INSPEC$$aB2550R (Radiation effects on semiconductor devices)
000409712 694__ $$9INSPEC$$aB2550A (Annealing processes in semiconductor technology).CI Si int, Si el.NI temperature: 1.5E+02 K, 1.2E+02 K, 3.53E+02 K, 2.83E+02 K; voltage: 2.5E+02 V.
000409712 695__ $$9INSPEC$$aannealing
000409712 695__ $$9INSPEC$$acryogenics
000409712 695__ $$9INSPEC$$aneutron-effects
000409712 695__ $$9INSPEC$$asilicon-radiation-detectors
000409712 700__ $$aBell, W.H.$$uGlasgow U.
000409712 700__ $$aBerglund, P.$$uHelsinki Inst. of Phys.
000409712 700__ $$aBorchi, E.$$uFlorence U.$$uINFN, Florence
000409712 700__ $$aBorer, K.$$uBern U., LHEP
000409712 700__ $$0AUTHOR|(CDS)2075543$$9#BEARD#$$aBruzzi, Mara$$uINFN and Universita', Firenze, Italy
000409712 700__ $$aBuontempo, S.$$uNaples U.$$uINFN, Naples
000409712 700__ $$aCasagrande, L.$$uLIP, Lisbon
000409712 700__ $$aChapuy, S.$$uU. Geneva (main)
000409712 700__ $$0AUTHOR|(CDS)2067990$$9#BEARD#$$aCindro, V$$uStefan Inst., Ljubljana$$uLjubljana U.
000409712 700__ $$aDimcovski, Zlatomir$$uU. Geneva (main)
000409712 700__ $$aD'Ambrosio, N$$uINFN, Naples$$uNaples U.
000409712 700__ $$0AUTHOR|(CDS)2071626$$9#BEARD#$$ade Boer, Wim$$uKarlsruhe U., EKP
000409712 700__ $$aDezillie, B.$$uBrookhaven Natl. Lab.
000409712 700__ $$aEsposito, A.$$uAIST, Tsukuba
000409712 700__ $$aGranata, V.$$uNaples U.$$uINFN, Naples
000409712 700__ $$aGrigoriev, E.$$uKarlsruhe U., EKP
000409712 700__ $$aHeijne, E.$$uCERN
000409712 700__ $$aHeising, S.$$uKarlsruhe U., EKP
000409712 700__ $$aJanos, S.$$uBern U., LHEP
000409712 700__ $$aKoivuniemi, J.$$uHelsinki Inst. of Phys.
000409712 700__ $$aKonorov, I.$$uMunich, Tech. U.
000409712 700__ $$aLi, Z.$$uBrookhaven Natl. Lab.
000409712 700__ $$aLourenço, C.$$uLIP, Lisbon
000409712 700__ $$aMikuz, M.$$uStefan Inst., Ljubljana$$uLjubljana U.
000409712 700__ $$aNiinikoski, T.$$uCERN
000409712 700__ $$aPagano, S.$$uINFN, Naples$$uNaples U.
000409712 700__ $$aPalmieri, V.$$uBern U., LHEP
000409712 700__ $$aPaul, S.$$uMunich, Tech. U.
000409712 700__ $$aPirollo, S.$$uINFN, Florence$$uFlorence U.
000409712 700__ $$aPretzl, K.$$uBern U., LHEP
000409712 700__ $$aRopotar, I.$$uCERN
000409712 700__ $$0AUTHOR|(CDS)2079159$$9#BEARD#$$aRuggiero, G$$uINFN, Naples$$uNaples U.
000409712 700__ $$aSalmi, J.$$uVTT Electronics, Espoo
000409712 700__ $$aSeppä, H.$$uVTT Electronics, Espoo
000409712 700__ $$aSuni, I.$$uVTT Electronics, Espoo
000409712 700__ $$aSmith, K.$$uGlasgow U.
000409712 700__ $$aSonderegger, P.$$uCERN
000409712 700__ $$aValtonen, M.$$uHelsinki Inst. of Phys.
000409712 700__ $$aZavrtanik, M.$$uStefan Inst., Ljubljana$$uLjubljana U.
000409712 710__ $$gRD39 Collaboration
000409712 710__ $$5EP
000409712 916__ $$sn$$w199900$$ya1999
000409712 960__ $$a13
000409712 961__ $$c20081215$$h1601$$lCER01$$x19991129
000409712 963__ $$aPUBLIC
000409712 962__ $$b369743$$k298-301$$ntoronto981108
000409712 970__ $$a000336792CER
000409712 980__ $$aARTICLE
000409712 980__ $$aConferencePaper