IEEE : Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Simancas, Adriana; Huth, Lennart; Mulyanto, Budi; Wennlöf, Håkan; Vignola, Gianpiero; Braach, Justus; Schütze, Paul; Dannheim, Dominik; Snoeys, Walter; Dort, Katharina; Hansen, Karsten; Reckleben, Christian; Feindt, Finn; Eckstein, Doris; Viera, Manuel Del Rio; Mendes, Larissa; Buschmann, Eric; Gregor, Ingrid-Maria; Rastorguev, Daniil; Stanitzki, Marcel; Daza, Sara Ruiz; Chauhan, Ankur; Spannagel, Simon; Velyka, Anastasiia

doi:10.1109/NSS/MIC44845.2022.10398964

Główna > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors > Statystyki użytkowania

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Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors - Simancas, Adriana et al - arXiv:2303.18153

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