CERN Accelerating science

Article
Report number	arXiv:2112.08999
Title	Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
Author(s)	Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Gurimskaya, Y. (Geneva U.) ; Kotitsa, R. (Geneva U. ; CERN) ; Magliocca, C. (Geneva U.) ; Martinelli, F. (CERN ; Ecole Polytechnique, Lausanne) ; Milanesio, M. (Geneva U.) ; Münker, M. (Geneva U.) ; Nessi, M. (Geneva U. ; CERN) ; Picardi, A. (Geneva U. ; CERN) ; Saidi, J. (Geneva U.) ; Rücker, H. (IHP, Frankfurt) ; Vicente Barreto Pinto, M. (Geneva U.) ; Zambito, S. (CERN)
Publication	2022-02-10
Imprint	2021-12-16
Number of pages	17
In:	JINST 17 (2022) P02019
DOI	10.1088/1748-0221/17/02/P02019 (publication)
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Abstract	A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.
Copyright/License	preprint: (License: CC BY 4.0) publication: © 2022-2024 CERN (License: CC-BY-4.0)

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