CERN Accelerating science

Article
Report number arXiv:2009.09505
Title Interstrip Capacitances of the Readout Board used in Large Triple-GEM Detectors for the CMS Muon Upgrade
Author(s)

Abbas, M. (KIT, Karlsruhe) ; Abbrescia, M. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Abdalla, H. (Cairo, Acad. Sci. Res. Tech. ; Cairo U.) ; Abdelalim, A. (Cairo, Acad. Sci. Res. Tech. ; Ain Shams U., Cairo ; British U. in Egypt) ; AbuZeid, S. (Cairo, Acad. Sci. Res. Tech. ; Ain Shams U., Cairo) ; Agapitos, A. (Peking U.) ; Ahmad, A. (NCP, Islamabad) ; Ahmed, A. (Delhi U.) ; Ahmed, W. (NCP, Islamabad) ; Aimè, C. (INFN, Pavia ; Pavia U.) ; Aruta, C. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Asghar, I. (NCP, Islamabad) ; Aspell, P. (CERN) ; Avila, C. (Andes U., Bogota) ; Babbar, J. (Panjab U.) ; Ban, Y. (Peking U.) ; Band, R. (UC, Davis) ; Bansal, S. (Panjab U.) ; Benussi, L. (Frascati) ; Bhatnagar, V. (Panjab U.) ; Bianco, M. (CERN) ; Bianco, S. (Frascati) ; Black, K. (Wisconsin U., Madison) ; Borgonovi, L. (INFN, Bologna ; U. Bologna, DIFA) ; Bouhali, O. (Texas A&M U. Qatar, Doha) ; Braghieri, A. (INFN, Pavia ; Pavia U.) ; Braibant, S. (INFN, Bologna ; U. Bologna, DIFA) ; Butalla, S. (Florida Inst. Tech.) ; Calzaferri, S. (INFN, Pavia ; Pavia U.) ; Caponero, M. (Frascati) ; Cassese, F. (INFN, Naples ; Naples U.) ; Cavallo, N. (INFN, Naples ; Naples U.) ; Chauhan, S. (Panjab U.) ; Colaleo, A. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Collins, J. (Florida Inst. Tech.) ; Conde Garcia, A. (CERN) ; Dalchenko, M. (Texas A-M) ; De Iorio, A. (INFN, Naples ; Naples U.) ; De Lentdecker, G. (Brussels U.) ; Dell Olio, D. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; De Robertis, G. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Dharmaratna, W. (Ruhuna U.) ; Dildick, S. (Texas A-M) ; Dorney, B. (Brussels U.) ; Erbacher, R. (UC, Davis) ; Fabozzi, F. (INFN, Naples ; Naples U.) ; Fallavollita, F. (CERN) ; Ferraro, A. (INFN, Pavia ; Pavia U.) ; Fiorina, D. (INFN, Pavia ; Pavia U.) ; Fontanesi, E. (INFN, Bologna ; U. Bologna, DIFA) ; Franco, M. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Galloni, C. (Wisconsin U., Madison) ; Giacomelli, P. (INFN, Bologna ; U. Bologna, DIFA) ; Gigli, S. (INFN, Pavia ; Pavia U.) ; Gilmore, J. (Texas A-M) ; Gola, M. (Delhi U.) ; Gruchala, M. (CERN) ; Gutierrez, A. (Wayne State U.) ; Hadjiiska, R. (Sofiya, Inst. Nucl. Res.) ; Hakkarainen, T. (Lappeenranta U. Tech.) ; Hauser, J. (UCLA) ; Hoepfner, K. (Aachen, Tech. Hochsch.) ; Hohlmann, M. (Florida Inst. Tech.) ; Hoorani, H. (NCP, Islamabad) ; Huang, T. (Texas A-M) ; Iaydjiev, P. (Sofiya, Inst. Nucl. Res.) ; Irshad, A. (Brussels U.) ; Iorio, A. (INFN, Naples ; Naples U.) ; Ivone, F. (Aachen, Tech. Hochsch.) ; Jaramillo, J. (Antioquia U.) ; Jeong, D. (Seoul U.) ; Jha, V. (Bhabha Atomic Res. Ctr.) ; Juodagalvis, A. (Vilnius U.) ; Juska, E. (Texas A-M) ; Kailasapathy, B. (Colombo U. ; Sri Lanka U., Vidyodaya) ; Kamon, T. (Texas A-M) ; Karchin, P. (Wayne State U.) ; Kaur, A. (Panjab U.) ; Kaur, H. (Panjab U.) ; Keller, H. (Aachen, Tech. Hochsch.) ; Kim, H. (Texas A-M) ; Kim, J. (Seoul Natl. U. (main)) ; Kumar, A. (Delhi U.) ; Kumar, S. (Panjab U.) ; Kumawat, H. (Bhabha Atomic Res. Ctr.) ; Lacalamita, N. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Lee, J.S.H. (Seoul U.) ; Levin, A. (Peking U.) ; Li, Q. (Peking U.) ; Licciulli, F. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Lista, L. (INFN, Naples ; Naples U.) ; Liyanage, K. (Ruhuna U.) ; Loddo, F. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Lohan, M. (Panjab U.) ; Luhach, M. (Panjab U.) ; Maggi, M. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Maghrbi, Y. (AUM, Kuwait) ; Majumdar, N. (Saha Inst.) ; Malagalage, K. (Colombo U.) ; Malhotra, S. (Texas A&M U. Qatar, Doha) ; Martiradonna, S. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Mccoll, N. (UCLA) ; McLean, C. (UC, Davis) ; Merlin, J. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Misheva, M. (Sofiya, Inst. Nucl. Res.) ; Mishra, D. (Bhabha Atomic Res. Ctr.) ; Mocellin, G. (Aachen, Tech. Hochsch.) ; Moureaux, L. (Brussels U.) ; Muhammad, A. (NCP, Islamabad) ; Muhammad, S. (NCP, Islamabad) ; Mukhopadhyay, S. (Saha Inst.) ; Naimuddin, M. (Delhi U.) ; Netrakanti, P. (Bhabha Atomic Res. Ctr.) ; Nuzzo, S. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Oliveira, R. (CERN) ; Pant, L. (Bhabha Atomic Res. Ctr.) ; Paolucci, P. (INFN, Naples ; Naples U.) ; Park, I.C. (Seoul U.) ; Passamonti, L. (Frascati) ; Passeggio, G. (INFN, Naples ; Naples U.) ; Peck, A. (UCLA) ; Perera, N. (Ruhuna U.) ; Petre, L. (Brussels U.) ; Petrow, H. (Lappeenranta U. Tech.) ; Piccolo, D. (Frascati) ; Pierluigi, D. (Frascati) ; Raffone, G. (Frascati) ; Rahmani, M. (Florida Inst. Tech.) ; Ramirez, F. (Antioquia U.) ; Ranieri, A. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Rashevski, G. (Sofiya, Inst. Nucl. Res.) ; Ressegotti, M. (INFN, Pavia ; Pavia U.) ; Riccardi, C. (INFN, Pavia ; Pavia U.) ; Rodozov, M. (Sofiya, Inst. Nucl. Res.) ; Romano, E. (INFN, Pavia ; Pavia U.) ; Roskas, C. (Gent U.) ; Rossi, B. (INFN, Naples ; Naples U.) ; Rout, P. (Saha Inst.) ; Roy, D. (Florida Inst. Tech.) ; Ruiz, J.D. (Antioquia U.) ; Russo, A. (Frascati) ; Safonov, A. (Texas A-M) ; Saltzberg, D. (UCLA) ; Saviano, G. (Frascati) ; Shah, A. (Delhi U.) ; Sharma, A. (CERN) ; Sharma, R. (Delhi U.) ; Shopova, M. (Sofiya, Inst. Nucl. Res.) ; Simone, F. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Singh, J. (Panjab U.) ; Soldani, E. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Sonnadara, U. (Colombo U.) ; Starling, E. (Brussels U.) ; Stone, B. (UCLA) ; Sturdy, J. (Wayne State U.) ; Sultanov, G. (Sofiya, Inst. Nucl. Res.) ; Szillasi, Z. (Debrecen, Inst. Nucl. Res.) ; Teague, D. (Wisconsin U., Madison) ; Teyssier, D. (Debrecen, Inst. Nucl. Res.) ; Tuuva, T. (Lappeenranta U. Tech.) ; Tytgat, M. (Gent U.) ; Vai, I. (Bergamo U. ; INFN, Pavia) ; Vanegas, N. (Antioquia U.) ; Venditti, R. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Verwilligen, P. (Bari Polytechnic ; Bari U. ; INFN, Bari) ; Vetens, W. (Wisconsin U., Madison) ; Virdi, A. (Panjab U.) ; Vitulo, P. (INFN, Pavia ; Pavia U.) ; Wajid, A. (NCP, Islamabad) ; Wang, D. (Peking U.) ; Wang, K. (Peking U.) ; Watson, I.J. (Seoul U.) ; Weatherwax, J. (Florida Inst. Tech.) ; Wickramage, N. (Ruhuna U.) ; Wickramarathna, D.D.C. (Colombo U.) ; Yang, Y. (Brussels U.) ; Yang, U. (Seoul Natl. U. (main)) ; Yongho, J. (Korea U.) ; Yoon, I. (Seoul Natl. U. (main)) ; You, Z. (SYSU, Guangzhou) ; Yu, I. (Korea U.) ; Zaleski, S. (Aachen, Tech. Hochsch.)

Publication 2020-12-14
Imprint 2020-09-20
Number of pages 21
Note 22 pages, 14 figures
In: JINST 15 (2020) P12019
DOI 10.1088/1748-0221/15/12/P12019
Subject category hep-ex ; Particle Physics - Experiment ; physics.ins-det ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment CERN LHC ; CMS
Abstract We present analytical calculations, Finite Element Analysis modeling, and physical measurements of the interstrip capacitances for different potential strip geometries and dimensions of the readout boards for the GE2/1 triple-Gas Electron Multiplier detector in the CMS muon system upgrade. The main goal of the study is to find configurations that minimize the interstrip capacitances and consequently maximize the signal-to-noise ratio for the detector. We find agreement at the 1.5--4.8% level between the two methods of calculations and on the average at the 17% level between calculations and measurements. A configuration with halved strip lengths and doubled strip widths results in a measured 27--29% reduction over the original configuration while leaving the total number of strips unchanged. We have now adopted this design modification for all eight module types of the GE2/1 detector and will produce the final detector with this new strip design.
Copyright/License preprint: (License: arXiv nonexclusive-distrib 1.0)
publication: © 2020 CERN (License: CC-BY-4.0)



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 Δημιουργία εγγραφής 2020-09-23, τελευταία τροποποίηση 2024-07-05


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