| Article | |
| Report number | AIDA-2020-CONF-2018-003 |
| Title | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
| Author(s) | Guilloux, F. (IRFU, CEA, Université Paris-Saclay) ; Balli, F. (IRFU, CEA, Université Paris-Saclay) ; Degerli, Y. (IRFU, CEA, Université Paris-Saclay) ; Elhosni, M. (IRFU, CEA, Université Paris-Saclay) ; Guyot, C. (IRFU, CEA, Université Paris-Saclay) ; Hemperek, T. (University of Bonn) ; Lachkar, M. (IRFU, CEA, Université Paris-Saclay) ; Meyer, JP. (IRFU, CEA, Université Paris-Saclay) ; Ouraou, A. (IRFU, CEA, Université Paris-Saclay) ; Schwemling, P. (IRFU, CEA, Université Paris-Saclay) ; Vandenbroucke, M. (IRFU, CEA, Université Paris-Saclay) |
| Publication | 2018 |
| Imprint | 2017-09-14 |
| In: | PoS TWEPP-17 (2018) pp.023 |
| In: | Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.023 |
| Subject category | Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors |
| Abstract | The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC. |
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Запись создана 2018-05-15, последняя модификация 2019-03-12
