CERN Accelerating science

Published Articles
Title	HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results
Author(s)	Liu, J (Marseille, CPPM ; Shandong U.) ; Backhaus, M (CERN ; Bonn U.) ; Barbero, M (Marseille, CPPM) ; Bates, R (Glasgow U.) ; Blue, A (Glasgow U.) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) ; Capeans, M (CERN) ; Clemens, J C (Marseille, CPPM) ; Feigl, S (CERN) ; Ferrere, D (Geneva U.) ; Fougeron, D (Marseille, CPPM) ; Garcia-Sciveres, M (LBL, Berkeley) ; George, M (Gottingen U.) ; Godiot-Basolo, S (Marseille, CPPM) ; Gonella, L (Bonn U.) ; Gonzalez-Sevilla, S (Geneva U.) ; Große-Knetter, J (Gottingen U.) ; Hemperek, T (Bonn U.) ; Hügging, F (Bonn U.) ; Hynds, D (Glasgow U.) ; Iacobucci, G (Geneva U.) ; Kreidl, C (Heidelberg U.) ; Krüger, H (Bonn U.) ; Rosa, A La (Geneva U.) ; Miucci, A (Geneva U.) ; Muenstermann, D (Geneva U.) ; Nessi, M (CERN) ; Obermann, T (Bonn U.) ; Pangaud, P (Marseille, CPPM) ; Perić, I (Heidelberg U.) ; Pernegger, H (CERN) ; Quadt, A (Gottingen U.) ; Rieger, J (Gottingen U.) ; Ristic, B (CERN) ; Rozanov, A (Marseille, CPPM) ; Weingarten, J (Gottingen U.) ; Wermes, N (Bonn U.)
Collaboration	HV CMOS
Publication	2015
In:	JINST 10 (2015) C03033
In:	16th International Workshop on Radiation Imaging Detectors, Trieste, Italy, 22 - 26 Jun 2014, pp.C03033
DOI	10.1088/1748-0221/10/03/C03033
Subject category	Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Abstract	In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 10(34) cm(−)(2) s(−)(1), more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D; effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given.
Copyright/License	publication: © 2015-2025 The Author(s) (License: CC-BY-3.0)

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