CERN Accelerating science

Article
Report number	arXiv:1601.00459
Title	Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Author(s)	Rymaszewski, Piotr (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Godiot, Stépahnie (Marseille, CPPM) ; Gonella, Laura (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Liu, Jian (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Peric, Ivan (KIT, Karlsruhe) ; Rozanov, Alexandre (Marseille, CPPM) ; Wang, Anqing (Marseille, CPPM) ; Wermes, Norbert (Bonn U.)
Publication	2016-02-15
Imprint	04 Jan 2016
Number of pages	9
Note	Comments: 9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST 9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST
In:	JINST 11 (2016) pp.C02045
In:	Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02045
DOI	10.1088/1748-0221/11/02/C02045
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Abstract	The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
Copyright/License	arXiv nonexclusive-distrib. 1.0

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