Showing 1–14 of 14 results for author: Ruecker, H

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Authors: T. Moretti, M. Milanesio, R. Cardella, T. Kugathasan, A. Picardi, I. Semendyaev, M. Elviretti, H. Rücker, K. Nakamura, Y. Takubo, M. Togawa, F. Cadoux, R. Cardarelli, L. Cecconi, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias , et al. (5 additional authors not shown)

Abstract: Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a… ▽ More Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively. △ Less

Submitted 21 June, 2024; v1 submitted 19 April, 2024; originally announced April 2024.

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

Authors: M. Milanesio, L. Paolozzi, T. Moretti, A. Latshaw, L. Bonacina, R. Cardella, T. Kugathasan, A. Picardi, M. Elviretti, H. Rücker, R. Cardarelli, L. Cecconi, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias, I. Semendyaev, J. Saidi, M. Vicente Barreto Pinto, S. Zambito , et al. (1 additional authors not shown)

Abstract: The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully deplete… ▽ More The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm2, the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection. △ Less

Submitted 11 February, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: Submitted to JINST

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

Authors: M. Milanesio, L. Paolozzi, T. Moretti, R. Cardella, T. Kugathasan, F. Martinelli, A. Picardi, I. Semendyaev, S. Zambito, K. Nakamura, Y. Tabuko, M. Togawa, M. Elviretti, H. Rücker, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi , et al. (5 additional authors not shown)

Abstract: A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted se… ▽ More A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: Submitted to JINST

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

Authors: S. Zambito, M. Milanesio, T. Moretti, L. Paolozzi, M. Munker, R. Cardella, T. Kugathasan, F. Martinelli, A. Picardi, M. Elviretti, H. Rücker, A. Trusch, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias , et al. (3 additional authors not shown)

Abstract: A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel… ▽ More A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Comments: 11 pages, 11 figures

Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype

Authors: G. Iacobucci, S. Zambito, M. Milanesio, T. Moretti, J. Saidi, L. Paolozzi, M. Munker, R. Cardella, F. Martinelli, A. Picardi, H. Rücker, A. Trusch, P. Valerio, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, Y. Gurimskaya, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina , et al. (2 additional authors not shown)

Abstract: The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector… ▽ More The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype

Authors: L. Paolozzi, M. Munker, R. Cardella, M. Milanesio, Y. Gurimskaya, F. Martinelli, A. Picardi, H. Rücker, A. Trusch, P. Valerio, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, R. Kotitsa, C. Magliocca, T. Moretti, M. Nessi, A. Pizarro Medina, J. Sabater Iglesias, J. Saidi, M. Vicente Barreto Pinto , et al. (2 additional authors not shown)

Abstract: The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The si… ▽ More The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $μ$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain. △ Less

Submitted 25 September, 2022; v1 submitted 16 June, 2022; originally announced June 2022.

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Authors: G. Iacobucci, L. Paolozzi, P. Valerio, T. Moretti, F. Cadoux, R. Cardarelli, R. Cardella, S. Débieux, Y. Favre, D. Ferrere, S. Gonzalez-Sevilla, Y. Gurimskaya, R. Kotitsa, C. Magliocca, F. Martinelli, M. Milanesio, M. Münker, M. Nessi, A. Picardi, J. Saidi, H. Rücker, M. Vicente Barreto Pinto, S. Zambito

Abstract: A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $μ$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% w… ▽ More A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $μ$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $μ$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current. △ Less

Submitted 21 January, 2022; v1 submitted 16 December, 2021; originally announced December 2021.

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Authors: Fulvio Martinelli, Chiara Magliocca, Roberto Cardella, Edoardo Charbon, Giuseppe Iacobucci, Marzio Nessi, Lorenzo Paolozzi, Holger Rücker, Pierpaolo Valerio

Abstract: This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the exp… ▽ More This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the experiment. Self-induced noise, instabilities and cross-talk were minimised to cope with the several challenges associated to the integration of pre-amplifiers and discriminators inside the pixels. The methodology used in the characterisation and the design choices will also be described. Two of the variants studied here will be implemented in the pre-production ASIC of the FASER experiment pre-shower for further tests. △ Less

Submitted 22 November, 2021; originally announced November 2021.

Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

Authors: L. Paolozzi, R. Cardarelli, S. Débieux, Y. Favre, D. Ferrère, S. Gonzalez-Sevilla, G. Iacobucci, M. Kaynak, F. Martinelli, M. Nessi, H. Rücker, I. Sanna, DMS Sultan, P. Valerio, E. Zaffaroni

Abstract: SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consump… ▽ More SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrmμ $A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance. △ Less

Submitted 28 August, 2020; v1 submitted 28 May, 2020; originally announced May 2020.

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

Authors: G. Iacobucci, R. Cardarelli, S. Débieux, F. A. Di Bello, Y. Favre, D. Hayakawa, M. Kaynak, M. Nessi, L. Paolozzi, H. Rücker, DMS Sultan, P. Valerio

Abstract: A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, an… ▽ More A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

Authors: Lorenzo Paolozzi, Yves Bandi, Roberto Cardarelli, Stephane Debieux, Yannick Favre, Didier Ferrere, Dean Forshaw, Daiki Hayakawa, Giuseppe Iacobucci, Mehmet Kaynak, Antonio Miucci, Marzio Nessi, Emanuele Ripiccini, Holger Ruecker, Pierpaolo Valerio, Michele Weber

Abstract: The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 μm and backside metallized, was operated at a voltage… ▽ More The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 μm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9 % and a time resolution down to 110 ps. △ Less

Submitted 27 November, 2018; originally announced November 2018.

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

Authors: L. Paolozzi, Y. Bandi, M. Benoit, R. Cardarelli, S. Débieux, D. Forshaw, D. Hayakawa, G. Iacobucci, M. Kaynak, A. Miucci, M. Nessi, O. Ratib, E. Ripiccini, H. Rücker, P. Valerio, M. Weber

Abstract: The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. Th… ▽ More The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps. △ Less

Submitted 6 February, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Dispersion-like phenomena in Jovian decametric S-bursts: Tabooed Facts

Authors: Oleksiy V. Arkhypov, Helmut O. Rucker

Abstract: The dominant viewpoint on Jovian decametric S-burst emission neglects the time delay of the radiation, although its base theory of electron cyclotron maser instability allows a significant decreasing of X-mode group velocity near the cutoff frequency at the bottom of source region. We searched for effects of the frequency-related delay of radiation in broadband Jovian radio storms consisting of pe… ▽ More The dominant viewpoint on Jovian decametric S-burst emission neglects the time delay of the radiation, although its base theory of electron cyclotron maser instability allows a significant decreasing of X-mode group velocity near the cutoff frequency at the bottom of source region. We searched for effects of the frequency-related delay of radiation in broadband Jovian radio storms consisting of periodic S-bursts (S-burst trains) at 16 to 30 MHz. It was found that up to 1% of bursts in a train are of distorted meandering shape in dynamic spectrum, where the emission from one radio source was observed at several frequencies simultaneously. It is difficult to explain such spectra in terms of radio waves beaming or causality without significant frequency-related delay of radio emission. We found experimentally that the frequency drift rate of middle lines of such events coincides with the drift rate of disturbances in common S-bursts. This indicates a general distortion of the dynamic spectrum of S-bursts. As a result, the correlation method for the measurement of the spectral distortion is proposed. Using this method, we found the approximation coefficients for the distortion in 32 spectra of 8 Io-B storms. The corrected spectra formally show that S-burst trains do not move mainly outward from Jupiter, as it is usually assumed, but fly in the opposite direction. Our simulation confirms that the dispersion is capable in principle to reproduce the found spectral distortion. Hence, the dispersion-like phenomena in Jovian S-bursts deserve discussion because they have no satisfactory explanations in terms of traditional approach. △ Less

Submitted 9 February, 2014; originally announced February 2014.

Comments: 20 pages, 15 figures

Damping of Alfven waves in solar partially ionized plasmas: effect of neutral helium in multi-fluid approach

Authors: T. V. Zaqarashvili, M. L. Khodachenko, H. O. Rucker

Abstract: Chromospheric and prominence plasmas contain neutral atoms, which may change the plasma dynamics through collision with ions. Most of the atoms are neutral hydrogen, but a significant amount of neutral helium may also be present in the plasma with a particular temperature. Damping of MHD waves due to ion collision with neutral hydrogen is well studied, but the effects of neutral helium are largely… ▽ More Chromospheric and prominence plasmas contain neutral atoms, which may change the plasma dynamics through collision with ions. Most of the atoms are neutral hydrogen, but a significant amount of neutral helium may also be present in the plasma with a particular temperature. Damping of MHD waves due to ion collision with neutral hydrogen is well studied, but the effects of neutral helium are largely unknown. We aim to study the effect of neutral helium in the damping of Alfven waves in solar partially ionized plasmas. We consider three-fluid magnetohydrodynamic (MHD) approximation, where one component is electron-proton-singly ionized helium and other two components are the neutral hydrogen and neutral helium atoms. We derive the dispersion relation of linear Alfven waves in isothermal and homogeneous plasma. Then we solve the dispersion relation and derive the damping rates of Alfven waves for different plasma parameters. The presence of neutral helium significantly enhances the damping of Alfven waves compared to the damping due to neutral hydrogen at certain values of plasma temperature (10000-40000 K) and ionization. Damping rates have a peak near the ion-neutral collision frequency, but decrease for the higher part of wave spectrum. Collision of ions with neutral helium atoms can be of importance for the damping of Alfven waves in chromospheric spicules and in prominence-corona transition regions. △ Less

Submitted 6 September, 2011; originally announced September 2011.

Comments: 7 pages, 4 figures, accepted in A&A